FY7BCH-02

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FY7BCH-02 HIGH-SPEED SWITCHING USE FY7BCH-02 OUTLINE DRAWING “  Dimensions in mm 6.4 4.4 Œ 3.0  1.1 0.275 0.65 Œ “ DRAIN  Ž ‘ ’ SOURCE   GATE Œ “   q 2.5V DRIVE q VDSS .................................................................................. 20V q rDS (ON) (MAX) ............................................................. 27mΩ q ID ........................................................................................... 7A Ž ‘’ TSSOP8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 ±10 7 49 7 1.5 6.0 1.6 –55 ~ +150 –55 ~ +150 0.035 Unit V V A A A A A W °C °C g Sep.1998 L = 10µH MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FY7BCH-02 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 — — 0.4 — — — — — — — — — — — — — — Typ. — — — 0.7 20 29 0.140 15 950 350 260 20 65 135 130 0.75 — 50 Max. — ±0.1 0.1 1.3 27 40 0.189 — — — — — — — — 1.1 78.1 — Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50Ω IS = 1.5A, VGS = 0V Channel to ambient IS = 1.5A, dis/dt = –50A/µs Sep.1998