H5N2801P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0118-0100Z Rev.1.00 Oct.01.2003
Features
• Low on-resistance • Low drive current • High speed switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
Rev.1.00, Oct.01.2003, page 1 of 9
H5N2801P
Absolute Maximum Rating
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3
Note3 EAR
Rating 280 ±30 60 240 60 35 74.5 150 0.833 150 –55 to +150
Unit V V A A A A mJ W °C /W °C °C
Pch
Note2
Channel to case thermal impedance θch-c Channel temperature Storage temperature Tch Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Oct.01.2003, page 2 of 9
H5N2801P
Electrical Characteristics
(Ta = 25°C)
Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol Min V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF 280 — — 3.0 27 — — — — — — — — — — — — — — Typ — — — — 45 0.034 5400 770 100 70 300 250 210 148 30 73 1.10 270 2.8 Max — 1 ±0.1 4.5 — 0.043 — — — — — — — — — — 1.65 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC IF = 60 A, VGS = 0Note4 IF = 60 A, VGS = 0 diF/dt = 100 A/µs VDD = 220 V VGS = 10 V ID = 60 A ID = 30 A RL = 4.7 Ω VGS = 10 V Rg = 10 Ω Test condition ID = 10 mA, VGS = 0 VDS = 280 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 30 A, VDS = 10 VNote4 ID = 30 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz
Body-drain diode reverse recovery trr time Body-drain diode reverse recovery Qrr charge Notes: 4. Pulse test
Rev.1.00, Oct.01.2003, page 3 of 9
H5N2801P
Main Characteristics
Power vs. Temperature Derating 200 Maximum Safe Operation Area
1000 300
Pch (W)
150
100 30 10 3
DC Op
PW
er at
=
Channel Dissipation
Drain Current
10
(T
µ 0µ s 1m s s 10
m s( 1s ho
100
ID (A)
10
ion
c=
t)
Operation in
25
50
1 this area is
limited by RDS(on)
°C )
0.3 0.1 0 50 100 150 Tc (°C) 200 1 Case Temperature Ta = 25°C 30 3 10 100 300 1000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 100 10 V 8V 7V 200 6.5 V Pulse Test
Typical Transfer Characteristics VDS = 10 V Pulse Test
ID (A)
60
ID (A) Drain Current
6V 5.5 V
80
160
120
Drain Current
40
80 Tc = 75°C 25°C –25°C 0 2 4 6 Gate to Source Voltage 8 10 VGS (V)
20 VGS = 5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V)
40
Rev.1.00, Oct.01.2003, page 4 of 9
H5N2801P
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
Pulse Test
4
3 I D = 60 A 2 30 A 10 A 0 12 4 8 Gate to Source Voltage 16 20 VGS (V)
1
Drain to Source on State Resistance RDS(on) (Ω)
5
Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1
0.05
0.02
0.01 1 2 5 10 20 50 Drain Current ID (A) 100
Static Drain to Source on State Resistance RDS(on) (Ω)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.1 Pulse Test 0.08 VGS = 10 V ID = 60 A
Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 75°C 2 1 0.5 0.2 0.2 0.5 1 2 5 VDS = 10 V Pulse Test 10 20 ID (A) 50 100 25°C Tc = –25°C
0.06 10 A 0.04
30 A
0.02 0 –40
0 40 80 120 Case Temperature Tc (°C)
160
Drain Current
Rev.1.00, Oct.01.2003, page 5 of 9
H5N2801P
Body-Drain Diode Reverse Recovery Time 1000
50000 20000
Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000 5000 2000 1000 500 200 100 50
200 100 50
Coss
20 10 0.1
di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A)
Crss 0 20 40 60 Drain to Source Voltage 80 100 VDS (V)
Dynamic Input Characteristics
VGS (V)
500
VDS (V)
ID = 60 A VGS
20
10000
Switching Characteristics VGS = 10 V, VDD = 140 V PW = 5 µs, duty < 1 % RG =10 Ω
400 VDS = 50 V 100 V 220 V VDD 200
16
Switching Time t (ns)
Gate to Source Voltage
Drain to Source Voltage
1000
tf td(off) tf
tr
300
12
8
100
100
VDS = 220 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC)
4 0 200
td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100
0
Rev.1.00, Oct.01.2003, page 6 of 9
H5N2801P
Reverse Drain Current vs. Source to Drain Voltage 100
IDR (A) Gate to Source Cutoff Voltage V GS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature 5 VDS = 10 V ID = 10mA
80
4
Reverse Drain Current
60 VGS = 0 V 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
3
1mA 0.1mA
40
2
20
1 0 -50
0
50
100
150 Tc (°C)
200
Source to Drain Voltage
VSD (V)
Case Temperature
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 140 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
Rev.1.00, Oct.01.2003, page 7 of 9
H5N2801P
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3 Tc = 25°C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
θch – c(t) = γs (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW T
0.03
0.02 1 0.0
PW T
0.01 10 µ
1s
t ho
pu
lse
100 µ
1m
100 m 10 m Pulse Width PW (s)
1
10
Rev.1.00, Oct.01.2003, page 8 of 9
H5N2801P
Package Dimensions
As of January, 2003
5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2 1.5
Unit: mm
0.5
1.0
φ3.2 ± 0.2
14.9 ± 0.2
19.9 ± 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 ± 0.2
18.0 ± 0.5
0.6 ± 0.2
3.6
0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g
Rev.1.00, Oct.01.2003, page 9 of 9
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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