H5N2901FN

H5N2901FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0372-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 290 ±30 18 72 18 72 6 2.1 30 4.17 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.1.00, May.28.2004, page 1 of 7 H5N2901FN Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 290 — — 3.0 10 — — — — — — — — — — — — — — Typ — — — — 18 0.070 2200 300 38 35 60 110 45 56 13 26 0.9 190 1.3 Max — 1 ±0.1 4.0 — 0.091 — — — — — — — — — — 1.5 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 290 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 9 A, VDS = 10 V Note4 ID = 9 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 9 A VGS = 10 V RL = 16.1 Ω Rg = 10 Ω VDD = 230 V VGS = 10 V ID = 18 A IF = 18 A, VGS = 0 Note4 IF = 18 A, VGS = 0 diF/dt = 100 A/µs Rev.1.00, May.28.2004, page 2 of 7 H5N2901FN Main Characteristics Power vs. Temperature Derating 40 Pch (W) Maximum Safe Operation Area 1000 300 ID (A) 30 100 30 10 3 1 0.3 Operation in 0.03 this area is 0.1 limited by RDS(on) DC PW Op er Channel Dissipation Drain Current 10 10 0 µ µs 1m = ss 1 0 m ion 20 at s( (T 1s c= ho ) 25 t) °C 10 0 50 100 150 Tc (°C) 200 Case Temperature Ta = 25°C 0.01 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 100 VDS = 10 V Pulse Test Typical Output Characteristics 100 Pulse Test ID (A) ID (A) Drain Current 80 10 V 8V 7V 80 60 6V 60 Drain Current 40 40 20 VGS = 5 V 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 20 Tc = 75°C 25°C –25°C 8 10 VGS (V) 0 2 4 6 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 4 3 I D = 30 A 2 15 A 9A 1 Drain to Source on State Resistance RDS(on) (Ω) 5 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V 0.1 0.05 0.02 0 0.01 12 4 8 Gate to Source Voltage 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100 Rev.1.00, May.28.2004, page 3 of 7 H5N2901FN Static Drain to Source on State Resistance vs. Temperature 0.400 Pulse Test 0.320 V GS = 10 V Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) 100 50 Tc = –25°C 20 10 5 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 75°C 25°C 0.240 I D = 30 A 0.160 15 A 0.080 0 –40 9A 0 40 80 120 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 160 Drain Current Typical Capacitance vs. Drain to Source Voltage 10000 5000 1000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) VGS = 0 f = 1 MHz Ciss 2000 1000 500 200 100 50 Coss 200 100 50 20 10 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Dynamic Input Characteristics VGS (V) Crss 0 20 40 60 Drain to Source Voltage 80 100 VDS (V) 500 VDS (V) I D = 30 A V DS = 50 V 100 V 230 V VDD VGS 20 10000 Switching Characteristics V GS = 10 V, V DD = 145 V PW = 5 µs, duty < 1 % R G =10 Ω 400 16 Gate to Source Voltage Switching Time t (ns) Drain to Source Voltage 1000 300 12 tf t d(off) tr 200 8 100 tf t d(on) 100 V DS = 230 V 100 V 50 V 20 40 Gate Charge 60 80 Qg (nC) 4 0 100 0 10 0.1 tr 0.3 1 3 Drain Current 10 30 ID (A) 100 Rev.1.00, May.28.2004, page 4 of 7 H5N2901FN Reverse Drain Current vs. Source to Drain Voltage 100 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V I D = 10mA IDR (A) 80 Gate to Source Cutoff Voltage V GS(off) (V) 4 Reverse Drain Current 60 V GS = 0 V 3 1mA 2 0.1mA 40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 20 1 0 -50 0 50 100 150 Tc (°C) 200 Source to Drain Voltage VSD (V) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 Normalized Transient Thermal Impedance γ s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 tp ul se 0.01 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.17°C/W, Tc = 25°C PDM PW T 0.003 0.001 10 µ 1s D= PW T ho 100 µ 1m 10 m Pulse Width PW (s) 100 m 1 10 Rev.1.00, May.28.2004, page 5 of 7 H5N2901FN Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 145 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% Rev.1.00, May.28.2004, page 6 of 7 H5N2901FN Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Ordering Information Part Name Quantity Shipping Container H5N2901FN-E 50 pcs Plastic magazine Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, May.28.2004, page 7 of 7 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! 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