H5N3003P

H5N3003P Silicon N Channel MOS FET High Speed Power Switching REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 H5N3003P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 Note1 Ratings 300 ±30 40 160 40 160 30 150 0.833 150 –55 to +150 Unit V V A A A A A W °C /W °C °C θch-c Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.2.00, Aug.01.2003, page 2 of 9 H5N3003P Electrical Characteristics (Ta = 25°C) Item Symbol Min 300 — — 3.0 20 — — — — — — — — — — — — — — Typ — — — — 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max — 1 ±0.1 4.0 — Unit V µA µA V S Test Conditions ID = 10mA, VGS = 0 VDS = 300V, VGS = 0 VGS = ±30V, VDS = 0 VDS = 10V, ID = 1mA ID = 20A, VDS = 10VNote4 ID = 20A, VGS= 10VNote4 VDS = 25V VGS = 0 f = 1MHz ID= 20A RL = 7.5Ω VGS = 10V Rg=10 Ω VDD = 240V VGS = 10V ID = 40A IF = 40A, VGS = 0 IF = 40A, VGS = 0 diF/dt=100A/µs Drain to source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body–drain diode forward voltage IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF 0. 069 Ω — — — — — — — — — — 1.5 — — pF pF pF ns ns ns ns nC nC nC V ns µC Body–drain diode reverse recovery trr time Body–drain diode reverse recovery Qrr charge Notes: 4. Pulse test Rev.2.00, Aug.01.2003, page 3 of 9 H5N3003P Main Characteristics Power vs. Temperature Derating 200 Maximum Safe Operation Area 1000 300 Pch (W) ID (A) 150 100 30 10 3 1 this area is 0.3 0.1 Operation in limited by RDS(on) PW DC Op er Channel Dissipation = 1m 10 (T 10 s 1s µ 0µ s s 10 Drain Current 100 m at ion s( 25 ho c= t) 50 °C ) Ta = 25°C 1 30 3 10 100 300 1000 Drain to Source Voltage VDS (V) 0 50 100 150 Tc (°C) 200 Case Temperature Typical Output Characteristics 100 10 V 8V 100 7V Pulse Test 6V 60 5.5 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 80 80 60 Drain Current 40 40 Tc = 75°C 25°C –25°C 2 4 6 Gate to Source Voltage 8 10 VGS (V) 20 VGS = 5 V 20 0 4 8 12 Drain to Source Voltage 16 20 VDS (V) 0 Rev.2.00, Aug.01.2003, page 4 of 9 H5N3003P Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test 4 3 I D = 40 A 2 20 A 1 10 A Drain to Source on State Resistance RDS(on) (Ω) 5 Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1 0.05 0.02 0 0.01 12 4 8 Gate to Source Voltage 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100 Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 V GS = 10 V I D = 40 A Forward Transfer Admittance vs. Drain Current 100 50 20 10 5 75°C 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 25°C Tc = –25°C 0.12 20 A 0.08 10 A 0.04 0 –40 0 40 80 120 Case Temperature Tc (°C) 160 Drain Current Rev.2.00, Aug.01.2003, page 5 of 9 H5N3003P Body-Drain Diode Reverse Recovery Time 1000 50000 20000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 10000 5000 2000 1000 500 200 100 50 200 100 50 Coss 20 10 0.1 di / dt = 100 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Crss 0 20 40 60 Drain to Source Voltage 80 100 VDS (V) Dynamic Input Characteristics VGS (V) 500 VDS (V) I D = 40 A VGS 20 10000 Switching Characteristics V GS = 10 V, V DD = 150 V PW = 10 µs, duty < 1 % R G =10 Ω 400 V DS = 50 V 100 V 240 V VDD 16 Switching Time t (ns) Gate to Source Voltage Drain to Source Voltage 1000 tf t d(off) tr 300 12 200 8 100 tf t d(on) tr 100 V DS = 240 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC) 4 0 200 0 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Rev.2.00, Aug.01.2003, page 6 of 9 H5N3003P Reverse Drain Current vs. Source to Drain Voltage 100 IDR (A) Gate to Source Cutoff Voltage V GS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 5 V DS = 10 V I D = 10mA 80 V GS = 0 V 4 Reverse Drain Current 60 3 1mA 2 0.1mA 40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0 20 1 0 -50 0 50 100 150 Tc (°C) 200 Source to Drain Voltage VSD (V) Case Temperature Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Ω Vin 10 V V DD = 150 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr Rev.2.00, Aug.01.2003, page 7 of 9 H5N3003P Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 0.833°C/W, Tc = 25°C PDM D= PW T 0.03 0.02 1 0.0 PW T 0.01 10 µ 1s t ho pu lse 100 µ 1m 100 m 10 m Pulse Width PW (s) 1 10 Rev.2.00, Aug.01.2003, page 8 of 9 H5N3003P Package Dimensions As of January, 2003 5.0 ± 0.3 15.6 ± 0.3 1.0 φ3.2 ± 0.2 4.8 ± 0.2 1.5 Unit: mm 0.5 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 2.0 0.6 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Package Code JEDEC JEITA Mass (reference value) TO-3P — Conforms 5.0 g Rev.2.00, Aug.01.2003, page 9 of 9 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. 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