H5N6001P-E

H5N6001P Silicon N Channel MOS FET High Speed Power Switching REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance Low leakage current High speed switching Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Rev.3.00 Sep 07, 2005 page 1 of 6 H5N6001P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 600 ±30 20 80 20 80 6.5 150 0.833 150 –55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 600 — — 3.0 12 — — — — — — — — — — — — — — Typ — — — — 20 0.30 4640 340 70 60 100 220 90 135 20 65 0.9 590 6.5 Max — 1 ±0.1 4.0 — 0.38 — — — — — — — — — — 1.4 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test Conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 10 A, VDS = 10 V ID = 10 A, VGS = 10 V VDS = 25 V VGS = 0 f = 1 MHz VDD ≅ 300 V ID = 10 A VGS = 10 V RL = 30 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 20 A IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/dt = 100 A/µs Note 4 Rev.3.00 Sep 07, 2005 page 2 of 6 H5N6001P Main Characteristics Power vs. Temperature Derating Pch (W) 200 100 30 =1 0m s( 1s ho er t) at ion (T c= 25 °C ) PW Maximum Safe Operation Area 10 10 0 µs 1m µs ID (A) s 150 10 3 1 DC Channel Dissipation Op 100 Drain Current 50 0.3 Operation in 0.1 this area is limited by RDS(on) 0.03 Ta = 25°C 0.01 0 0 50 100 150 200 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 10 V 30 8V 6V ID (A) Drain Current 40 40 30 Drain Current 20 5.5 V 20 Tc = 75°C 25°C –25°C 6 8 10 10 5V VGS = 4.5 V 0 4 8 12 16 20 10 0 0 0 2 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 10 Pulse Test 8 ID = 20 A 6 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (Ω) 2 Pulse Test 1 0.5 VGS = 10 V, 15 V 4 10 A 2 5A 0.2 0 0 4 8 12 16 20 0.1 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 3 of 6 H5N6001P Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 1 100 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 VDS = 10 V Pulse Test 5 10 20 50 100 75°C 25°C Tc = –25°C Pulse Test VGS = 10 V Static Drain to Source on State Resistance RDS(on) (Ω) Forward Transfer Admittance vs. Drain Current 0.8 ID = 20 A 5A 10 A 0.2 0.6 0.4 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 1000 10000 5000 Typical Capacitance vs. Drain to Source Voltage Ciss Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 2000 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz 50 100 150 200 250 Crss Coss 200 100 50 20 10 0.1 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) VGS (V) 1000 ID = 20 A 800 VDD = 100 V 300 V 480 V VGS 16 20 10000 Switching Characteristics VGS = 10 V, VDD = 300 V PW = 5 µs, duty ≤ 1 % R G = 10 Ω 1000 td(off) tf td(on) tr 10 0.1 0.3 1 3 10 30 100 tr Drain to Source Voltage 600 VDS 12 400 8 Gate to Source Voltage Switching Time t (ns) 100 200 0 0 VDD = 480 V 300 V 100 V 40 80 120 160 4 0 200 Gate Charge Qg (nC) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 4 of 6 H5N6001P Reverse Drain Current vs. Source to Drain Voltage 50 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Case Temperature 6 5 ID = 10 mA 4 3 0.1 mA 2 1 VDS = 10 V 0 –50 0 50 100 150 200 1 mA IDR (A) Pulse Test 40 Reverse Drain Current 30 5 V, 10 V 20 VGS = 0 V 10 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Case Temperature Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch – c (t) = γ s (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C PDM uls e D= PW T PW T 0.03 0.02 1 0.0 0.01 10 µ 1s h p ot 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL 10 Ω Vin 10 V Vout Monitor Vin Vout VDD = 300 V 10% 10% 90% 10% 90% td(on) tr 90% td(off) tf Rev.3.00 Sep 07, 2005 page 5 of 6 H5N6001P Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name Quantity Shipping Container H5N6001P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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