H7N0203AB_05

H7N0203AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1119-0500 (Previous: ADE-208-1490C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS (on) =2.4 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Rev.5.00 Sep 07, 2005 page 1 of 7 H7N0203AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 20 ±20 90 360 90 20 40 100 1.25 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C IAP Note 2 EAR Pch θ ch-c Tch Tstg Note 3 Note 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 20 ±20 — — 1.0 — — 80 — — — — — — — — — — — — Typ — — — — — 2.4 3.5 140 6800 1850 750 110 22 20 32 380 110 35 0.90 60 Max — — ±10 10 2.5 3.0 5.1 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 20 V, VGS = 0 Note 4 ID = 1 mA, VDS = 10 V ID = 45 A, VGS = 10 V Note 4 ID = 45 A, VGS = 4.5 V ID = 45 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 90 A VGS = 10 V, ID = 45 A RL = 0.22 Ω Rg = 4.7 Ω IF = 90 A, VGS = 0 IF = 90 A, VGS = 0 diF/dt = 50 A/µs Note 4 Note 4 Rev.5.00 Sep 07, 2005 page 2 of 7 H7N0203AB Main Characteristics Power vs. Temperature Derating 160 1000 300 Maximum Safe Operation Area 10 µs 10 1 m 0 µs s Pch (W) (A) 100 30 10 DC Operation (Tc = 25°C) 120 Channel Dissipation 80 Drain Current ID 40 PW = 10 ms 1 Operation in (1 shot) this area is 0.3 limited by RDS (on) 0.1 0.03 Ta = 25°C 0.3 1 3 10 30 100 3 0 0 50 100 150 200 0.01 0.1 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 5V 3.5 V 3.0 V 60 2.8 V 40 Pulse Test 100 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 80 80 60 Drain Current 40 –25°C 20 Tc = 75°C 25°C 0 20 VGS = 2.4 V 0 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS (on) (mV) 0.4 Pulse Test 0.3 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS (on) (mΩ) 10 Pulse Test 5 VGS = 4.5 V 10 V 2 Drain to Source Voltage 0.2 ID = 50 A 0.1 20 A 0 0 4 8 12 16 10 A 20 1 1 10 100 1000 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Sep 07, 2005 page 3 of 7 H7N0203AB Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 8 Pulse Test 6 ID = 10, 20 A 4 VGS = 4.5 V 50 A 1000 Tc = –25°C 100 Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance vs. Drain Current 10 75°C 1 25°C 2 VGS = 10 V 0 –25 ID = 10, 20, 50 A VDS = 10 V Pulse Test 0.1 0.01 0.1 1 10 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage (V) 100000 50000 50 Dynamic Input Characteristics ID = 90 A 40 VDD = 5 V 10 V 20 V VDS 20 8 VGS 16 Capacitance C (pF) 20000 10000 5000 2000 1000 500 200 100 0 4 8 12 16 20 VGS = 0 f = 1 MHz Crss Coss Ciss VDS Drain to Source Voltage 30 12 10 0 0 40 VDD = 20 V 10 V 5V 80 120 160 4 0 200 Drain to Source Voltage VDS (V) Gate Charge Qg (nc) Switching Characteristics 1000 500 Static Drain to Source on State Resistance vs. Drain Current 100 tr Reverse Recovery Time trr (ns) VGS = 10 V, VDD = 10 V duty ≤ 1 % Switching Time t (ns) 200 td(off) 100 50 tf td(on) 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 0.2 0.5 1 2 5 10 20 50 100 20 10 0.1 0.3 1 3 10 30 100 Drain Current ID (A) Drain Current IDR (A) Rev.5.00 Sep 07, 2005 page 4 of 7 Gate to Source Voltage VGS (V) 20 H7N0203AB Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 100 50 IAP = 20 A VDD = 10 V duty < 0.1 % Rg ≥ 50 Ω (A) IF 80 10 V VGS = 0, –5 V 40 Reverse Drain Current 60 5V 30 40 20 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 10 0 0 25 50 75 100 125 150 Source to Drain Voltage VSDF (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 1.25°C/W, Tc = 25°C PDM PW T 1m 10 m 100 m 1 10 0.05 0.03 2 0.0 e 01 uls 0. tp ho 1s D= PW T 0.01 10 µ 100 µ Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin 15 V 50 Ω VDD 0 Rev.5.00 Sep 07, 2005 page 5 of 7 H7N0203AB Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. Rg RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V VDS = 10 V td(on) 90% tr 90% td(off) tf Rev.5.00 Sep 07, 2005 page 6 of 7 H7N0203AB Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name Quantity Shipping Container H7N0203AB-E 500 pcs Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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