H7N0308AB

H7N0308AB Silicon N Channel MOS FET High Speed Power Switching ADE-208-1569B(Z) 3rd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Frange) 3. Source H7N0308AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Note 2 Note 1 Ratings 30 ±20 70 280 70 100 1.25 150 –55 to +150 Unit V V A A A W °C/W °C °C θch-c Tch Tstg Rev.2, Aug. 2002, page 2 of 9 H7N0308AB Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.0 — — |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF 54 — — — — — — — — — — — — Typ — — — — — 3.8 6.0 90 3350 840 480 52 11 10 30 370 80 27 0.93 60 Max — — ±10 10 2.5 4.8 8.5 — — — — — — — — — — — — — µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 70 A, VGS = 0 IF = 70 A, VGS = 0 diF/ dt =50 A/µs Unit V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1MHz VDD = 10 V VGS = 10 V ID = 70 A VGS = 10 V, ID = 35 A RL =0.29 Ω Rg =4.7 Ω ID = 35 A, VGS = 4.5 V Note 1 Note 1 Note 1 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) Note 1 Body–drain diode reverse recovery trr time Notes: 1. Pulse test Rev.2, Aug. 2002, page 3 of 9 H7N0308AB Main Characteristics Power vs. Temperature Derating 160 500 Maximum Safe Operation Area 10 1m DC Op era µs Pch (W) 120 ID (A) 100 s 10 0µ s 10 Channel Dissipation Drain Current tio PW n = 10 80 ms 1 Operation in this area is limited by RDS(on) 0.1 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Tc = 25°C 1 shot Pulse 40 0 50 100 150 Tc (°C) 200 Case Temperature Typical Output Characteristics 100 10V 4.5 V 100 Pulse Test 3.5 V Typical Transfer Characteristics V DS = 10 V Pulse Test ID (A) 60 3V ID Drain Current (A) 80 80 60 25°C Tc = 75°C -25°C Drain Current 40 40 20 VGS = 2.5 V 20 0 2 4 6 Drain to Source Voltage 8 VDS (V) 10 0 1 2 3 Gate to Source Voltage 4 VGS 5 (V) Rev.2, Aug. 2002, page 4 of 9 H7N0308AB Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test Drain to Source On State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 V GS = 4.5 V 3 1 0.3 0.1 1 3 10 100 300 30 Drain Current ID (A) 1000 VDS(on) Drain to Source Voltage (mV) 400 300 200 I D = 50 A 10 V 100 20 A 10 A 0 4 8 12 Gate to Source Voltage 16 20 VGS (V) Drain to Source On State Resistance RDS(on) (mΩ) Pulse Test 10 8 V GS = 4.5 V 6 4 I D = 10 A, 20 A I D = 50 A Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 12 Forward Transfer Admittance vs. Drain Current 1000 300 100 30 10 3 1 75°C Tc = -25°C 25°C 10 A, 20 A, 50 A 2 0 -25 10 V V DS = 10 V Pulse Test 1 3 10 30 ID (A) 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current Rev.2, Aug. 2002, page 5 of 9 H7N0308AB Body-Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 3000 50 1000 Coss Crss 20 di / dt = 50 A / µs V GS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 300 VGS = 0 f = 1 MHz 100 0 10 20 30 40 (V) 50 Drain to Source Voltage VDS 10 0.1 Dynamic Input Characteristics VDS (V) 50 (V) I D = 70 A VDD = 5 V 10 V 20 V V DS V GS 20 1000 Switching Characteristics V GS = 10 V , VDS = 10 V 500 Rg = 4.7 Ω, duty < 1 % Switching Time t (ns) 40 16 Drain to Source Voltage VGS tr 200 100 50 t d(off) 30 12 20 8 Gate to Source Voltage t d(on) tf 0.3 1 3 Drain Current 10 30 ID (A) 100 10 V DD = 20 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 20 10 0.1 0 Rev.2, Aug. 2002, page 6 of 9 H7N0308AB Reverse Drain Current vs. Souece to Drain Voltage 100 Reverse Drain Current IDR (A) 80 10 V 60 5V V GS = 0, -5V 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 VSD 2.0 (V) Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Tc = 25°C 1 D=1 0.5 0.2 0.3 0.1 0.1 0.05 0.02 e 1 0.0 puls ot h 1s θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 1.25°C/ W, Tc = 25°C PDM PW T 0.03 D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Rev.2, Aug. 2002, page 7 of 9 H7N0308AB Package Dimensions As of January, 2002 Unit: mm 11.5 MAX 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 4.44 ± 0.2 +0.1 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 MAX 14.0 ± 0.5 1.5 MAX 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) TO-220AB Conforms Conforms 1.8 g Rev.2, Aug. 2002, page 8 of 9 H7N0308AB Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : -2735-9218 Fax : -2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 6.0 Rev.2, Aug. 2002, page 9 of 9