H7N0602AB

H7N0602AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0068-0200Z Rev.2.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 H7N0602AB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ — — — — — 4.1 6.2 120 9000 1000 470 140 30 30 55 290 140 50 0.95 45 Max — — ±10 10 2.5 5.2 9.0 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/dt = 100 A/µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 45 A, VGS = 10 VNote1 ID = 45 A, VGS = 4.5 VNote1 ID = 45 A, VGS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 85 A VGS = 10 V, ID = 45 A RL = 0.67 Ω Rg = 4.7 Ω Gate to source breakdown Voltage V(BR)GSS ±20 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr IGSS IDSS VGS(off) RDS(on) — — 1.5 — — 70 — — — — — — — — — — — — Body–drain diode forward voltage VDF Body–drain diode reverse recovery time Notes: 1. Pulse test Rev.2.00, Oct.30.2003, page 3 of 9 H7N0602AB Main Characteristics Power vs. Temperature Derating 200 Pch (W) (A) Maximum Safe Operation Area 1000 300 100 ID 1 10 10 0 150 Drain Current µs µs Channel Dissipation 30 100 10 3 DC Operation (Tc = 25°C) s m PW = 10 ms (1 shot) 80 1 Operation in 0.3 this area is limited by RDS(on) 0 50 100 150 Tc (°C) 200 0.1 Ta = 25°C 0.1 0.3 1 3 10 30 VDS 100 (V) Case Temperature Drain to Source Voltage Typical Output Characteristics 200 VGS = 10 V (A) Typical Transfer Characteristics 200 VDS = 10 V Pulse Test Pulse Test (A) ID Drain Current 160 6.0 V 4.5 V 160 ID 120 4.0 V 120 Drain Current 80 3.5 V 40 3V 0 2 4 6 Drain to Source Voltage 8 VDS 10 (V) 80 Tc = 75°C 40 25°C –25°C 3 4 VGS 5 (V) 0 1 2 Gate to Source Voltage Rev.2.00, Oct.30.2003, page 4 of 9 H7N0602AB Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS(on) (V) Drain to Source on State Resistance RDS(on) (mΩ) 500 Pulse Test 100 Pulse Test 30 400 300 ID = 50 A 10 200 VGS = 4.5 V 100 20 A 10 A 16 20 VGS (V) 3 10 V 0 12 4 8 Gate to Source Voltage 1 1 3 30 100 300 1000 10 Drain Current ID (A) Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 Forward Transfer Admittance vs. Drain Current 1000 VDS = 10 V Pulse Test 300 100 25°C 30 10 3 1 1 3 10 30 100 300 1000 (A) 75°C Tc = –25°C 12 50 A 8 10, 20 A 4.5 V 4 0 –50 VGS = 10 V 0 50 10, 20, 50 A 100 Tc 150 (°C) 200 Case Temperature Drain Current ID Rev.2.00, Oct.30.2003, page 5 of 9 H7N0602AB Body-Drain Diode Reverse Recovery Time 1000 100000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 300 100 30 10 3 1 0.1 di / dt = 100 A / µs VGS = 0, Ta = 25°C 30000 10000 3000 1000 Coss 300 100 0 VGS = 0 f = 1 MHz Ciss Crss 50 (V) 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 10 20 30 40 Drain to Source Voltage VDS Dynamic Input Characteristics Switching Characteristics VDS (V) ID = 85 A VGS VDS VDD = 50 V 25 V 10 V (V) 100 20 1000 tf 300 tr td(off) td(on) tf Switching Time t (ns) 80 16 VGS Gate to Source Voltage Drain to Source Voltage 100 60 12 30 tr 10 VGS = 10 V, VDD = 30 V 3 PW = 5 µs, duty < 1 % Rg = 4.7 Ω 1 0.1 0.3 3 10 1 Drain Current ID 40 8 20 VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc) 4 0 200 0 30 (A) 100 Rev.2.00, Oct.30.2003, page 6 of 9 H7N0602AB Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 500 IAP = 65 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 200 (A) Reverse Drain Current IDR 160 10 V 400 120 300 80 5V VGS = 0, –5 V Pulse Test 200 40 100 0 25 0 0.4 0.8 1.2 1.6 VSD 2.0 (V) Source to Drain Voltage 50 75 100 125 Channel Temperature Tch (°C) 150 Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Rev.2.00, Oct.30.2003, page 7 of 9 H7N0602AB Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γs (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch - c(t) = γs (t) • θch - c θch - c = 1.25°C/ W, Tc = 25°C PDM 0.03 D= PW T 0.0 1 PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width PW (S) 100 m 1 10 Switching Time Test Circuit Waveform Vin Monitor Rg D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off) 90% 10% Vin 10 V V DS = 30V tf Rev.2.00, Oct.30.2003, page 8 of 9 H7N0602AB Package Dimensions As of January, 2003 Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 +0.2 –0.1 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 14.0 ± 0.5 1.5 Max 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Package Code JEDEC JEITA Mass (reference value) TO-220AB Conforms Conforms 1.8 g Rev.2.00, Oct.30.2003, page 9 of 9 Sales Strategic Planning Div. Keep safety first in your circuit designs! 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