H7N1002AB

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N1002AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 Ratings 100 ±20 75 300 75 50 166 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.2.00, Oct.30.2003, page 2 of 9 H7N1002AB Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 Typ — — — — — 8 10 95 9700 740 330 155 35 33 43 245 130 25 0.93 70 Max — — ±10 10 2.5 10 15 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nc nc nc ns ns ns ns V ns IF = 75 A, VGS = 0 IF = 75 A, VGS = 0 diF/ dt = 100 A/µs Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 37.5 A, VGS = 10 VNote1 ID = 37.5 A, VGS = 4.5 VNote1 ID = 37.5 A, VDS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 75 A VGS = 10 V, ID = 37.5 A RL = 0.8 Ω Rg = 4.7 Ω Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF IGSS IDSS VGS(off) RDS(on) Gate to source breakdown Voltage V(BR)GSS ±20 — — 1.5 — — 57 — — — — — — — — — — — — Body–drain diode reverse recovery trr time Notes: 1. Pulse test Rev.2.00, Oct.30.2003, page 3 of 9 H7N1002AB Main Characteristics Power vs. Temperature Derating 200 Pch (W) 300 100 Maximum Safe Operation Area µ 0µ s 1m s = DC 10 m s (T Op s (1 c= e sh 25 ratio ot) °C n ) PW 10 10 150 Drain Current ID (A) 30 10 3 1 Operation in 0.3 0.1 Channel Dissipation 100 50 this area is limited by RDS(on) 0 50 100 150 Tc (°C) 200 0.03 0.1 Ta = 25°C 3 30 0.3 1 10 100 Drain to Source Voltage VDS (V) Case Temperature Typical Output Characteristics 50 10 V 4V 50 3.6 V Pulse Test Drain Current ID (A) Typical Transfer Characteristics VDS = 10 V Pulse Test 40 40 Drain Current ID (A) 30 3.4 V 20 30 20 Tc = 75°C 25°C -25°C 3 4 5 1 2 Gate to Source Voltage VGS (V) 10 VGS = 3 V 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 10 0 Rev.2.00, Oct.30.2003, page 4 of 9 H7N1002AB Static Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VS. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 VGS = 4.5 V 10 V Drain to Source Saturation Voltage VDS(on) (V) 1.0 Pulse Test 0.8 0.6 ID = 50 A 0.4 2 1 0.5 2 5 10 20 50 100 200 Drain Current ID (A) 0.2 20 A 10 A 0 5 10 15 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS(on) (mΩ) Pulse Test 32 50 A ID = 10 A, 20 A VGS = 4.5 V 50 A 10 A, 20 A 10 V 0 40 80 120 (°C) 160 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 40 Forward Transfer Admittance vs. Drain Current 200 100 Tc = –25°C 10 24 16 1 75°C 0.1 0.02 0.01 25°C 8 0 -40 VDS = 10 V Pulse Test 0.1 1 10 100 Case Temperature Tc Drain Current ID (A) Rev.2.00, Oct.30.2003, page 5 of 9 H7N1002AB Body-Drain Diode Reverse Recovery Time 1000 20000 10000 Typical Capacitance vs. Drain to Source Voltage Ciss Reverse Recovery Time trr (ns) Capacitance C (pF) 500 200 100 50 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 5000 2000 1000 500 200 100 Coss Crss VGS = 0 f = 1 MHz 0 10 20 30 40 (V) 50 20 10 0.1 50 20 Drain to Source Voltage VDS Dynamic Input Characteristics 200 20 1000 Switching Characteristics Drain to source Voltage VDS (V) Gate to Source Voltage VGS (V) 160 VDD = 25 V 50 V 80 V VGS ID = 75 A 16 tr t d(off) Switching Time t (ns) 100 t d(on) tf 10 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1% RG = 4.7 Ω 0.3 1 3 10 30 Drain Current ID (A) 100 120 VDS 12 80 8 40 VDD = 80 V 50 V 25 V 80 160 240 320 Gate Charge Qg (nC) 4 0 400 0 1 0.1 Rev.2.00, Oct.30.2003, page 6 of 9 H7N1002AB Reverses Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Maximum Avalanche Energy vs. Channel Temperature Derating EAR (mJ) 200 IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50 Ω 80 VGS = 10 V 160 Repetitive Avalanche Energy 60 5V 120 40 80 20 0, –5 V Pulse Test 40 0 25 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source Drain Voltage 50 75 100 Channel Temperature 125 150 Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 VDD Rev.2.00, Oct.30.2003, page 7 of 9 H7N1002AB Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γs (t) Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch - c(t) = γs (t) • θch - c θch - c = 1.25°C/ W, Tc = 25°C PDM PW T 0.03 0.02 1 0.0 lse pu ot h 1s D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Switching Time Test Circuit Vin Monitor Rg D.U.T. RL Vin Vin 10 V V DS = 30 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Rev.2.00, Oct.30.2003, page 8 of 9 H7N1002AB Package Dimensions As of January, 2003 Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 4.44 ± 0.2 +0.1 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 14.0 ± 0.5 1.5 Max 7.8 ± 0.5 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Package Code JEDEC JEITA Mass (reference value) TO-220AB Conforms Conforms 1.8 g Rev.2.00, Oct.30.2003, page 9 of 9 Sales Strategic Planning Div. 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