H7N1004AB

H7N1004AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Features • Low on-resistance RDS (on) =25 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB ) 4 D G 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 ms, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Note2 IAP Note2 EAR Pch Note3 Tch Tstg Note1 Value 100 ±20 30 100 30 15 22.5 50 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 1 of 7 H7N1004AB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.5 — — 22 — — — — — — — — — — — — Typ — — — — — 25 30 37 2800 240 140 50 9 11 23 120 70 9.5 0.9 47 Max — — ±10 10 2.5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note4 ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A RL = 2 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/µs REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 2 of 7 H7N1004AB Main Characteristics Power vs. Temperature Derating 80 Maximum Safe Operation Area 200 100 50 20 10 5 2 1 0.5 1 10 0 µ s 0 µs m s Pch (W) 60 ID (A) 1 Channel Dissipation 40 Drain Current PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 20 0 0 50 100 150 200 Operation in 0.2 this area is 0.1 limited by RDS (on) 0.05 Ta = 25°C 0.02 0.1 0.3 1 3 10 30 100 300 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 6V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) ID (A) Drain Current 40 4V 40 30 30 3.5 V Drain Current 20 20 Tc = –25°C 25°C 75°C 10 VGS = 3 V 0 0 2 4 6 8 10 10 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 1.0 Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS (on) (mΩ) 500 Pulse Test 200 100 50 VGS = 4.5 V 10 V 0.6 ID = 20 A 0.4 10 A 0.2 5A 20 10 5 1 2 0 0 5 10 15 20 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 3 of 7 H7N1004AB Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 100 Pulse Test 80 ID = 20 A 60 VGS = 4.5 V ID = 20 A 20 VGS = 10 V 0 –25 0 25 50 75 100 125 150 5, 10 A 5, 10 A 100 Tc = –25°C 10 Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance vs. Drain Current 1 75°C 0.1 25°C 40 VDS = 10 V Pulse Test 0.01 0.01 0.1 1 10 100 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 5000 Ciss Static Drain to Source on State Resistance vs. Drain Current 100 Reverse Recovery Time trr (ns) Capacitance C (pF) 2000 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz 10 20 30 40 50 Crss Coss 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics (V) VGS (V) 200 ID = 30 A 160 VDD = 25 V 50 V 100 V VGS 16 20 1000 Switching Characteristics VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 300 RG = 4.7 Ω 100 30 10 3 1 0.1 VDS tr Switching Time t (ns) Drain to Source Voltage 120 VDS 80 12 Gate to Source Voltage td(off) td(on) tf 8 40 VDD = 100 V 50 V 25 V 0 20 40 60 80 4 0 0 100 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 4 of 7 H7N1004AB Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) (A) 50 40 IAP = 15 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating IDR 40 32 Reverse Drain Current 30 10 V 5V 24 20 VGS = 0, –5 V 16 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 8 0 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C PDM pu lse 0.05 0.02 D= PW T 0.03 0.0 1 t ho PW T 1s 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin 15 V 50 Ω VDD 0 REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 5 of 7 H7N1004AB Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. Rg RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V VDS = 30 V td(on) 90% tr 90% td(off) tf REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 6 of 7 H7N1004AB Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.2 –0.1 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 REJ03G1579-0100 Rev.1.00 Sep 03, 2007 Page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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