H7N1004FN

H7N1004FN Silicon N-Channel MOSFET High-Speed Power Switching REJ03G1593-0100 Rev.1.00 Oct 23, 2007 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note1 IDR IAP EAR Note 3 Pch Note 2 Tch Tstg Note 3 Value 100 ±20 25 100 25 15 22.5 25 150 –55 to +150 Unit V V A A A A mJ W °C °C REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 1 of 7 H7N1004FN Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.5 — — 20 — — — — — — — — — — — — Typ — — — — — 25 30 35 2800 240 140 50 9 11 23 110 70 9.5 0.89 45 Max — — ±10 10 2.5 35 45 — — — — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 12.5 A, VGS = 10 V Note 4 ID = 12.5 A, VGS = 4.5 V Note 4 ID = 12.5 A, VGS = 10 V Note 4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 25 A VGS = 10 V, ID = 12.5 A RL = 2.4 Ω Rg = 4.7 Ω IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/dt = 100 A/µs REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 2 of 7 H7N1004FN Main Characteristics Power vs. Temperature Derating 40 100 30 PW Maximum Safe Operation Area 10 = 10 1m Channel Dissipation Pch (W) 10 0µ s µs Drain Current ID (A) 30 10 3 1 0.3 (T 20 sh O ot) c = pe 25 ratio °C n ) DC ms s (1 10 0 50 100 150 200 0.1 Operation in this area is limited by RDS(on) 0.03 Ta = 25°C 0.01 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 6V 50 Pulse Test 4V Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) Drain Current ID (A) 40 40 30 3.5 V 30 20 20 -25°C 25°C Tc = 75°C 10 VGS = 3 V 0 2 4 6 8 10 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VS. Gate to Source Voltage Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) 1.0 Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 VGS = 4.5 V 20 10 5 1 2 5 10 20 50 100 10 V 0.6 ID = 20 A 0.4 10 A 0.2 5A 0 5 10 15 20 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 3 of 7 H7N1004FN Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance |yfs| (S) 100 Pulse Test 100 Tc = –25°C 80 ID = 20 A 10 60 5, 10 A 1 25°C 75°C VDS = 10 V Pulse Test 40 VGS = 4.5 V 5, 10 A ID = 20 A 20 VGS = 10 V 0.1 0 –25 0 25 50 75 100 125 150 0.01 0.01 0.1 1 10 100 Case Temperature Tc (°C) Body-Drain Diode Reverse Recovery Time 100 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 5000 Ciss Reverse Recovery Time trr (ns) Capacitance C (pF) 2000 1000 500 200 100 50 20 VGS = 0 f = 1 MHz 10 0 10 Crss Coss 50 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 30 100 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics Drain to source Voltage VDS (V) Gate to Source Voltage VGS (V) 200 VDD = 25 V 50 V 160 100 V ID = 25 A VGS 20 1000 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1% RG = 4.7 Ω tr 16 Switching Time t (ns) 100 120 12 td(off) td(on) 80 8 10 tf 40 VDD = 100 V 50 V 25 V 4 VDS 0 20 40 60 80 0 100 1 0.1 0.3 1 3 10 30 100 Gate Charge Qg (nC) Drain Current ID (A) REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 4 of 7 H7N1004FN Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) 50 40 IAP = 15 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IDR (A) 40 VGS = 10 V 32 30 24 20 5V 0, -5 V 16 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 8 0 25 50 75 100 125 150 Source Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 1 D=1 0.5 0.3 0.2 Tc = 25°C 0.1 0.1 0.05 0.03 0.02 0.0 1 p ot uls e θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 5°C/W, Tc = 25°C PDM PW T 0.01 D= 1s h PW T 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor Rg Vin 15 V D. U. T 50 Ω 0 VDD REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 5 of 7 H7N1004FN Switching Time Test Circuit Switching Time Waveform Vin Monitor Rg Vout Monitor D.U.T. RL VDS = 30 V Vin Vout 10% 10% 90% 10% 90% td(off) tf Vin 10 V 90% td(on) tr REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 6 of 7 H7N1004FN Package Dimensions Package Name TO-220FN JEITA Package Code  RENESAS Code PRSS0003AB-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 φ3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Ordering Information Part No. H7N1004FN Quantity 50 pcs Shipping Container Plastic Magazine (Tube) REJ03G5193-0100 Rev.1.00 Oct 23, 2007 Page 7 of 7 2.6 ± 0.2 4.5 ± 0.2 6.5 ± 0.3 3 ± 0.3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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