HA12228F/HA12229F
Audio Signal Processor for Car Deck (Decode only Dolby B-type NR* with PB Amp.)
REJ03F0134-0200 (Previous: ADE-207-325A) Rev.2.00 Jun 15, 2005
Description
HA12228F/HA12229F are silicon monolithic bipolar IC providing Dolby noise reduction system*, music sensor, PB equalizer system in one chip. Notes: 1. Dolby is a trademark of Dolby Laboratories Licensing Corporation. A license from Dolby Laboratories Licensing Corporation is required for the use of this IC. 2. HA12229F is not built-in Dolby B-NR.
Functions
• • • • PB equalizer Music sensor Dolby B-NR (Only HA12228F) Line mute SW × 2 channel × 1 channel × 2 channel × 2 channel
Features
• Different type of PB equalizer characteristics selection (120 µs/70 µs) is available with fully electronic control switching built-in. • Easy interface with the PB head. (The PB-EQ resistance self-containing) • Changeable to Forward, Reverse-mode for PB head with fully electronic control switching built-in. • Available to change music sensing level by external resistor. • Available to change response of music sensor by external capacitor. • Music sensing level, built-in switch to change a band (MSGV). • NR ON/OFF fully electronic control switching built-in. (Only HA12228F) • Line mute control switching built-in. • Available to connect direct with MPU. • These ICs are strong for a cellular phone noise.
Rev.2.00 Jun 15, 2005 page 1 of 48
HA12228F/HA12229F
Ordering Information
Operating Voltage
Product HA12228F HA12229F Note: Min 6.5 12 Max V Unit
1. These ICs are designed to operate on single supply.
Standard Level
Product HA12228F HA12229F Package Code (Previous Code) PLQP0040JB-A (FP-40B) PB-OUT Level 300 mVrms
Function
Product HA12228F HA12229F PB-EQ ❍ ❍ ❍ ❍ Music Sensor ❍ ❍ Mute ❍ × Dolby B-NR
Rev.2.00 Jun 15, 2005 page 2 of 48
HA12228F/HA12229F
Pin Description, Equivalent Circuit
(VCC = 9 V single supply, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No. 13 4 27 Terminal Name MSI TAI(L) TAI(R) Note V = VCC/2 Equivalent Circuit Description MS input *1 Tape input
V 100 k VCC/2
23 * 8 *2 26
2
DET(R) DET(L) RIP
V = 2.5 V V = VCC/2
V
VCC
Time constant pin for NR rectifier Ripple filter
GND
5*
3
Bias
V = 0.28 V
V GND
Dolby bias current input
14
MSDET
—
Time constant pin for 1 MS rectifier *
GND
25 6 12
PBOUT(R) PBOUT(L) MAOUT
V = VCC/2
VCC
PB output
MS amp. output *1
V
GND
29 2
EQOUT(R) EQOUT(L)
V = VCC/2
VCC
Equalizer output
V
GND
Notes: 1. MS: Music Sensor 2. Non connection regarding HA12229F. 3. Test pin regarding HA12229F. Usually open or pull down to GND with 18 kΩ.
Rev.2.00 Jun 15, 2005 page 3 of 48
HA12228F/HA12229F
Pin Description, Equivalent Circuit (cont.)
(VCC = 9 V single supply, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No. 30 1 Terminal Name M-OUT(R) M-OUT(L) Note V = VCC/2
V
Equivalent Circuit
VCC
Description
Equalizer output for time constant
GND
37 39 35 33
FIN(R) FIN(L) RIN(R) RIN(L)
— —
Equalizer input (FORWARD)
Equalizer input (REVERSE)
Mode control input
20 21 * 19 17 18
16
1
MUTE ON/OFF NR ON/OFF 120/70 F/R S/R(MS GV)
MSOUT
—
22 k
100 k
GND
—
I
VCC
MS output (to MPU) *
2
200
100 k
GND
10 11
MS Gv(S) MS Gv(R)
V = VCC/2
MS gain terminal *2
V 90 k
31 40
NFI(R) NFI(L)
V = VCC/2
VCC
Equalizer output for time constant
V
to Vref
Notes: 1. Non connection regarding HA12229F. 2. MS: Music Sensor
Rev.2.00 Jun 15, 2005 page 4 of 48
HA12228F/HA12229F
Pin Description, Equivalent Circuit (cont.)
(VCC = 9 V single supply, Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No. 32 38 28 3 Terminal Name VREF1 VREF2 VREF3 VREF4 Note V = VCC/2 Equivalent Circuit
HA12228F
28 RAL*1
Description
VCC
Reference output
V 32
38
3
RAL
RAL
GND
HA12229F
VCC
V 32
38
28
RAL*1
RAL
GND
RAL
The same as the above.
V
3
15 36 7 9 22 24 34 Note:
VCC GND NC
— — —
VCC pin GND pin
1. RAL: Parasitic metal resistance
Rev.2.00 Jun 15, 2005 page 5 of 48
HA12228F/HA12229F
Block Diagram
HA12228F
PBOUT(R)
M-OUT(R)
EQOUT(R)
NC
NC
NR ON/OFF
21
30 13k 29
18k 120/70
28
27
31 NFI(R)
270k
DET(R)
Vref3
TAI(R)
RIP
− 180 +
F/R
RIN(L)
32 Vref1
33
34 NC
MUTE-ON/OFF
RIN(R)
35
36 GND
+ −
FIN(R)
37
38 Vref2
39
180
FIN(L)
MUTE-ON/OFF
F/R
18k 120/70
1
13k
2
3
4
5
6
7
8
9
10
M-OUT(L)
NC
EQOUT(L)
PBOUT(L)
NC
MSGv(S)
Vref4
TAI(L)
BIAS
270k
DET(L)
40
+
NFI(L)
+ −
Rev.2.00 Jun 15, 2005 page 6 of 48
+
26
25
24
23
22
20
19
18
17
16
MUTE ON/OFF
120/70
SER/REP(MS Gv)
FOR/REV
MSOUT
VCC
Dolby B-NR
LPF
+ −
S/R
15
+
MSDET DET 14 MSI 13
Dolby B-NR
MAOUT 12
MSGv(R) 11
Unit R: Ω C: F
HA12228F/HA12229F HA12229F
PBOUT(R)
M-OUT(R)
EQOUT(R)
NC
NC
NC
22
30 13k 29
18k 120/70
28
27
26
25
24
23
21
Vref3
TAI(R)
31 NFI(R)
270k
RIP
NC
− 180 +
F/R
RIN(L)
32 Vref1
33
34 NC
MUTE-ON/OFF
RIN(R)
35
36 GND
+ −
FIN(R)
37
38 Vref2
39
180
FIN(L)
MUTE-ON/OFF
F/R
18k 120/70
1
13k
2
3
4
5
6
7
8
9
10
M-OUT(L)
NC
EQOUT(L)
PBOUT(L)
NC
NC
MSGv(S)
Vref4
TAI(L)
40
BIAS
270k
+
NFI(L)
+ −
Rev.2.00 Jun 15, 2005 page 7 of 48
+
20
19
18
17
16
MUTE ON/OFF
120/70
SER/REP(MS Gv)
FOR/REV
MSOUT
VCC
LPF
+ −
S/R
15
+
MSDET DET 14 MSI 13
MAOUT 12
MSGv(R) 11
Unit R: Ω C: F
HA12228F/HA12229F
Functional Description
Power Supply Range HA12228F/HA12229F are provided with three line output level, which will permit on optimum overload margin for power supply conditions. And these are designed to operate on single supply only. Table 1
HA12228F HA12229F
Supply Voltage Range
Product 6.5 V to 12.0 V Single Supply
Note: The lower limit of supply voltage depends on the line output reference level. The minimum value of the overload margin is specified as 12 dB by Dolby Laboratories.
Reference Voltage These devices provide the reference voltage of half the supply voltage that is the signal grounds. As the peculiarity of these devices, the capacitor for the ripple filter is very small about 1/100 compared with their usual value. The block diagram is shown as figure 1.
+ −
VCC
Rch Dolby NR circuit Lch Dolby NR circuit
15
+ −
3 Vref4
28 Vref3
38 Vref2
36 GND
26
+
+ −
32 Vref1
Lch equalizer Rch equalizer
+ −
MS block : Internal reference voltage
Figure 1a The HA12228F Block Diagram of Reference Supply Voltage
VCC
3 Vref4
15
+ −
Line Amp. circuit
28 Vref3
38 Vref2
36 GND
26
+
+ −
32 Vref1
Lch equalizer
Rch equalizer
+ −
MS block : Internal reference voltage
Figure 1b The HA12229F Block Diagram of Reference Supply Voltage
Rev.2.00 Jun 15, 2005 page 8 of 48
HA12228F/HA12229F Operating Mode Control HA12228F/HA12229F provides fully electronic switching circuits. And each operating mode control are controlled by parallel data (DC voltage). When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even though as do not destruct it, in series for resistance. Table 2 Threshold Voltage (VTH)
Lo –0.2 to 1.0 Hi 3.5 to VCC Unit V Test Condition
Input Pin Measure
V
Pin No. 17, 18, 19, 20, 21*
Note:
*
Non connection regarding HA12229F.
Table 3
17 18 19 20 21*
Switching Truth Table
Pin No. Pin Name Forward/Reverse Search/Repeat 120 µ/70 µ MUTE ON/OFF NR ON/OFF Lo Forward Search (FF or REV) 70 µ (Metal or Chrome) MUTE-OFF NR-OFF Hi Reverse Repeat (Normal speed) 120 µ (Normal) MUTE-ON NR-ON
Notes: * Non connection regarding HA12229F. 1. Each pins are on pulled down with 100 kΩ internal resistor. Therefore, it will be low-level when each pins are open. 2. Over shoot level and under shoot level of input signal must be the standardized. (High: VCC, Low: –0.2 V) 3. Reducing pop noise is so much better for 10 kΩ to 22 kΩ resisitor and 1 µF to 22 µF capacitor shown figure 2.
Input Pin
10 to 22kΩ
+
MPU
1 to 22µF
Figure 2 Interface for Reduction of Pop Noise
Rev.2.00 Jun 15, 2005 page 9 of 48
HA12228F/HA12229F Input Block Diagram and Level Diagram
R1 5.1kΩ
R2 5.1kΩ
C2 0.1µF
EQOUT
M-OUT
C1 0.01µF
270kΩ
Vref3
TAI
30mVrms (−28.2dBs)
13kΩ
18kΩ
−+
NFI
Vref1
180Ω
+ −
Dolby B-NR circuit *
PBOUT
300mVrms (−8.2dBs)
RIN
FIN
0.55mVrms (−63dBs)
The each level shown above is typical value when offering PBOUT level to PBOUT pin. (EQ Amp. GV = 40.8dB at f = 1kHz) Note: HA12229F is not built-in Dolby B-NR.
Figure 3 Input Block Diagram Adjustment of Playback Dolby Level After replace R5 and R6 with a half-fix volume of 10 kΩ, adjust playback Dolby level.
Rev.2.00 Jun 15, 2005 page 10 of 48
HA12228F/HA12229F The Sensitivity Adjustment of Music Sensor Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensor block diagram is shown in figure 4, and frequency response is shown in figure 5.
VCC
CEX2 REX2 C8 +CEX1 R11 0.01µF 330kΩ REX1
+ C6 0.33µF
DVCC
TAI(R)
×1
MS SER
L/R signal addition
+ −
20dB
MS REP
90kΩ
MA MSI OUT
MS DET
RL
IL
−6dB
LPF
25kHz
− +
MSOUT MS Amp.
DET
GND
100kΩ
Micro computer
×1
TAI(L) Note: The impedance of MSI is 100kΩ.
Figure 4 Music Sensor Block Diagram
GV2
f3
Repeat mode
f4
GV (dB)
GV1
f1
Search mode
f2
10
100
1k f (Hz)
10k
25k
100k
Figure 5 Frequency Response
Rev.2.00 Jun 15, 2005 page 11 of 48
HA12228F/HA12229F 1. Search mode
GV1 = 20dB + 20 log 1 + 90k [dB] REX2 1 f1 = [Hz], f2 = 25k [Hz] 2π ⋅ CEX2 ⋅ REX2
2. Repeat mode
GV2 = 20dB + 20 log 1 + 90k [dB] REX1 1 f3 = [Hz], f4 = 25k [Hz] 2π ⋅ CEX1 ⋅ REX1
GVIA: L·R signal addition circuit gain. The sensitivity of music sensor (S) is computed by the formula mentioned below.
3 S = − GV*1 − 20 log 130* = 12.7 − GV 30*2
[dB]
Notes: 1. Search mode: GV1, Repeat mode: G V2 2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms 3. Standard sensing level of music sensor = 130 mVrms
Item Search mode Repeat mode REX1, 2 24 kΩ 2.4 kΩ CEX1, 2 0.01 µF 1 µF GV1, 2 33.5 dB 51.7 dB f1, 3 663 Hz 66.3 Hz f2, 4 25 kHz 25 kHz S (one side channel) –14.8 dB –33.0 dB S (both channel) –20.8 dB –39.0 dB
Note: S is 6 dB down in case of one-side channel. And this MS presented hysteresis lest MSOUT terminal should turn over again High level or Low level, in case of thresh S level constantly.
Music Sensor Time Constant 1. Sensing no signal to signal (Attack) is determined by C6, 0.01 µF to 1 µF capacitor C6 can be applicable. 2. Sensing signal to no signal (Recovery) is determined by C6 and R11, however preceding (1), 100 kΩ to 1 MΩ can be applicable. Music Sensor Output (MSOUT) As for the internal circuit of music sensor block, music sensor output pin is connected to the collector of NPN type directly, therefore, output level will be “high” when sensing no signal. And output level will be “low” when sensing signal.
IL =
DVCC − MSOUTLO* RL
* MSOUTLO : Sensing signal (about 1V)
Note: 1. Supply voltage of MSOUT pin must be less than VCC voltage.
Rev.2.00 Jun 15, 2005 page 12 of 48
HA12228F/HA12229F The Tolerances of External Components for Dolby NR (Only HA12228F) For adequate Dolby NR tracking response, take external components shown below. Also, leak is small capacity, and please employ a good quality object.
C14 0.1µF ±10%
23 DET(R) HA12228F
BIAS 5 R10 18kΩ ±2%
DET(L) 8 C7 0.1µF ±10%
Figure 6 Tolerance of External Components Countermeasure of a Cellular Phone Noise This IC have reinforced a cellular phone noise countermeasure, to show it hereinafter. However, it is presumed that this effect change it greatly, by a mount set. Please sufficiently examine an arrangement of positions, shield method, wiring pattern, in order to oftain a maximum effect. A high terminal of a noise sensitivity of this IC is FIN, RIN, NFI and RIP.
ref HA12228F 1000 p FIN 180 NFI M-OUT 0.01µ
+ −
270 k 13 k
SG
EQOUT AC VM wait DIN/AUDIO
Note: Test condition • Use for SG by cellular radio for an evaluation use. • SG output mode PDC system, burst UP Tch (Transmission mode on the side of a movement machine) • To evaluate a capacitor of 1000 pF as connecting with it directly. • About EQOUT output, what you measure through DIN/AUDIO filter.
Figure 7 Test Circuit
Rev.2.00 Jun 15, 2005 page 13 of 48
HA12228F/HA12229F
0
−10
EQOUT Noise Output (dBs)
FIN → EQOUT, VCC = 9 V, Vin = 0 dBm HA12228F HA12229F
−20
−30
−40
−50
−60 100
1000 Frequency (MHz)
10000
Figure 8 EQOUT Noise Output vs. Transmission Frequency Characteristic
10 0 −10
FIN → EQOUT, VCC = 9 V, f = 900 MHz HA12228F HA12229F
EQOUT Noise Output (dBs)
−20 −30 −40 −50 −60 −70 −80 −50
−40
−30 −20 −10 0 Higher Harmonic Input Vin (dBm)
10
20
Figure 9 EQOUT Noise Output vs. Transmission Signal Input Level Characteristic
Rev.2.00 Jun 15, 2005 page 14 of 48
HA12228F/HA12229F
Absolute Maximum Ratings
(Ta = 25°C)
Item Maximum supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC Max Pd Topr Tstg Rating 16 400 –40 to +85 –55 to +125 V mW °C °C Unit Note Ta ≤ 85°C
Rev.2.00 Jun 15, 2005 page 15 of 48
HA12228F
(Ta = 25°C, VCC = 9 V, Dolby level 0 dB = PBOUT level 0 dB = 300 mVrms, EQOUT level 0 dB = 60 mVrms) Test Condition IC Condition Symbol IQ GVIA DEC 2k (1) DEC 2k (2) DEC 5k (1) DEC 5k (2)
27 27 27 27 27
mV
HA12228F/HA12229F
Specification
R
4 4 4 4 4
PBOUT EQOUT fin (Hz) level (dB) level (dB) Other No signal 0 1k −20 2k −30 2k −20 5k −30 5k
Application Terminal Input Output
L
R 25 25 25 25 25
L COM Remark 15 6 6 6 6 6
Electrical Characteristics
Rev.2.00 Jun 15, 2005 page 16 of 48
NR ON/OFF OFF OFF ON ON ON ON
Min Typ Max Unit 4.0 9.5 15.0 mA 19.0 20.0 21.0 dB −5.8 −4.3 −2.8 dB −10.0 −8.5 −7.0 dB −4.7 −3.2 −1.7 dB −9.7 −8.2 −6.7 dB
−150 0 150 OFF OFF→ ON
Item Quiescent current Input Amp. gain B-type decode cut
MUTE 120µ/ SER/ FOR/ ON/OFF 70µ REP REV OFF 70µ SER FOR OFF OFF OFF OFF OFF No signal
12.0 70.0 50.0 70.0 70.0
dB dB % dB dB dB
37.8 40.8 43.8 33.9 36.9 39.9 29.6 32.6 35.6 25
PBOUT offset
Vofs
6
1
Signal handling Signal to noise ratio Total Harmonic Distortion Channel separation Vo max S/N THD CTRL (1) CTRL (2) CT MUTE ON OFF ON OFF ON OFF OFF OFF OFF OFF→ ON
1k 10k 10k 0 0 THD=1% +14dB 0 120µ 70µ FOR/ REV FOR FOR 120µ GV EQ 1k GV EQ 10k(1) GV EQ 10k(2)
MUTE attenuation
1k 1k 1k 1k 1k 1k
FOR
(0) 0 (+12) (+12)
THD=1% Rg=10kΩ, CCIR/ARM (+20)
13.0 80.0 0.05 0.3 60.0 80.0 80.0
27 27 27 37 27 27
6 25 4 6 25 4 6 25 4 39 29→2 2→29 4 25→6 6→25 4 6 25
dB 37/35 39/33 29
dB dB 37 37 39 39 29 29 2 2 2
2
PB-EQ gain
PB-EQ Maximum output level VOM PB-EQ T.H.D. THD-EQ (1k) 120µ
1k 1k
120µ 120µ
300 600 0.1
mVrms 37 39 29 0.3 % 37/35 39/33 29
2 2
PB-EQ input conversion noise VN
Rg=680Ω, DIN-AUDIO
0.7
1.5 µVrms 37/35 39/33 29
2
3 3
MS sensing level
VON (1) VON (2) VOL MS output low level MS output leakage current IOH Control voltage VIL VIH OFF OFF OFF
OFF OFF OFF
5k 5k 5k
FOR FOR/ REV FOR/ REV SER REP SER
0
No signal
−36.0 −18.0 −0.2 3.5
−32.0 −14.0 1.0 0.0
−28.0 dB −10.0 dB V 1.5 2.0 µA V 1.0 VCC V
27 27 27
4 4 4
25 25
6 6
16 16 16 16 17 to 21
Notes: 1. VCC = 12V 2. VCC = 6.5V 3. For inputting signal to one side channel
HA12229F
(Ta = 25°C, VCC = 9 V, PBOUT level 0 dB = 300 mVrms, EQOUT level 0 dB = 60 mVrms) Test Condition IC Condition Symbol IQ GVIA Vofs Vo max S/N THD CTRL (1) CTRL (2) CT MUTE 1k 1k 1k 1k 1k 1k 12.0 70.0 50.0 70.0 70.0 1k 0 0 0 THD=1% +14dB Rg=680Ω, DIN-AUDIO 10k 10k 1k 1k (1k) GV EQ 1k GV EQ 10k(1) GV EQ 10k(2) 120µ 120µ 120µ 120µ 70µ FOR/ REV FOR FOR 120µ (0) 0 (+12) (+12) THD=1% Rg=10kΩ, CCIR/ARM (+20) OFF→ ON No signal 0 −150 150 mV dB dB % dB dB dB 37.8 40.8 43.8 33.9 36.9 39.9 29.6 32.6 35.6 300 600 0.1 0.7 Min Typ Max Unit 3.0 5.0 8.0 mA 19.0 20.0 21.0 dB Specification Application Terminal Input Output L 4 R 27 R 25 25 L COM Remark 15 6 6 1 2
HA12228F/HA12229F
Rev.2.00 Jun 15, 2005 page 17 of 48
MUTE 120µ/ SER/ FOR/ ON/OFF 70µ REP REV OFF 70µ SER FOR OFF fin PBOUT EQOUT (Hz) level (dB) level (dB) Other No signal 0 1k OFF OFF OFF OFF OFF→ ON FOR 13.0 80.0 0.05 0.3 60.0 80.0 80.0 27 27 27 37 27 27 4 25 6 4 25 6 4 25 6 39 29→2 2→29 4 25→6 6→25 25 6 4 dB 37/35 39/33 29 dB dB 37 37 39 39 29 29 mVrms 37 39 29 0.3 % 37/35 39/33 29 1.5 µVrms 37/35 39/33 29 2 2 2 2 2 2 3 3 No signal 27 27 27 5k 5k 5k 4 4 4 25 25 6 6 16 16 16 16 17 to 20 0 −36.0 −18.0 −0.2 3.5 −32.0 −14.0 1.0 0.0 −28.0 dB −10.0 dB V 1.5 2.0 µA V 1.0 VCC V OFF OFF OFF FOR FOR/ REV FOR/ REV SER REP SER
Item Quiescent current Input Amp. gain
PBOUT offset
Signal handling Signal to noise ratio Total Harmonic Distortion Channel separation
MUTE attenuation
PB-EQ gain
PB-EQ Maximum output level VOM PB-EQ T.H.D. THD-EQ
PB-EQ input conversion noise VN
VON (1) VON (2) VOL MS output low level MS output leakage current IOH Control voltage VIL VIH
MS sensing level
Notes: 1. VCC = 12V 2. VCC = 6.5V 3. For inputting signal to one side channel
Test Circuit
EQ
R19 10k
PB SW7
R20 5.1k R21 5.1k
HA12228F/HA12229F
EQ
EX
R18 10k
SW5
C15 2.2µ
PBR MS
SW9 PBL
DC SOURCE2 (5V)
DC VM
NC
M-OUT(R)
EQOUT(R)
NC
RIP
Vref3
DET(R)
SW3
270k
TAI(R)
NR ON/ OFF
40
270k
MSGv(R) 11
DET(L) MSGv(S)
Vref4
TAI(L)
FIN RIN
C3 0.01µ 18k 120/70
TAI
C4 0.1µ
R10 18k
1
13k
2
3
4
BIAS
SW4
5
6
7
NC
8
C7 0.1µ
9
NC
10
Rch
Lch
SW2
M-OUT(L)
EQOUT(L)
ON
R7 5.1k
OFF
+C6
SW6
EQ
EX
SW1
2.2µ
R11 10k
R17 24k C13 0.01µ
+
Rev.2.00 Jun 15, 2005 page 18 of 48
C18 0.01µ
30 13k 29
28
27
18k 120/70
TAI RIN
FIN
C19 22µ
31 NFI(R)
− 180 +
OFF
SW13
R26 680
32 Vref1
F/R
MUTE-ON/OFF
70
SW14
33
C21 22µ
34 NC
R27 680
35
C1 22µ
36 GND
R1 680
+ −
37
C2 22µ
R2 680
38 Vref2
MUTE-ON/OFF
39
F/R
180
NFI(L)
+ −
R8 5.1k
AC VM1
AUDIO SG
R9 10k
Notes: 1. Resistor tolerance ±1% 2. Capacitor tolerance ±1% 3. Unit R: Ω, C: F
+
OFF
C17 0.1µ C20 1µ C14 0.1µ
26
25
+
SW11 ON EXT
DC SOURCE3
24
23
22
21
MUTE ON/OFF 20
120/70 19 SER/REP(MS Gv) 18
FOR/REV 17
MSOUT 16
R14 3.9k
SW12
120 EXT
REP EXT SER
SW15
ON EXT
Dolby B-NR
+
REV EXT FOR
+
LPF
+
S/R
+ −
VCC 15
MSDET DET 14 MSI 13
DC SOURCE1
+
R15 330k
C10 0.33µ
+C22
100µ
+
Dolby B-NR
MAOUT 12
C11 0.01µ
R16 C12 2.4k 1µ
AC VM2
DISTORTION ANALYZER
OSCILLO SCOPE
Rch SW10 Lch
NOISE METER
PB
EQ
SW8
NOISE METER WITH CCIR/ARM FILTER AND DIN/AUDIO FILTER
HA12228F/HA12229F
Characteristic Curves
Decode Cut vs. Frequency (HA12228F) 0 0dB −2 −10dB
Decode Cut (dB)
−4
−20dB
−6 −30dB −8
−10
−12 100
VCC = 9 V TAI→PBOUT NR-ON 1k Frequency (Hz) 10k
−40dB
20k
Quiescent Current vs. Supply Voltage (HA12228F) 13
all "L" 120µ NR-ON No signal
12
Quiescent Current (mA)
11
10
9
8
7
6
6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 19 of 48
HA12228F/HA12229F
Input Amp. Gain vs. Frequency (HA12228F) 30 VCC = 9 V TAI→PBOUT NR-OFF 20
Gain (dB)
10
0
−10
−20 10
100
1k 10k Frequency (Hz)
100k
1M
Total Harmonic Distortion vs. Frequency (HA12228F) (1) 1 −10 dB 0 dB 10 dB VCC = 9 V TAI→PBOUT NR-OFF
0.1
T.H.D. (%)
0.01
0.001 100
1k Frequency (Hz)
10k
20k
Rev.2.00 Jun 15, 2005 page 20 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Frequency (HA12228F) (2) 1 −10 dB 0 dB 10 dB VCC = 9 V TAI→PBOUT NR-ON
0.1
T.H.D. (%)
0.01
0.001 100
1k Frequency (Hz)
10k
20k
Total Harmonic Distortion vs. Output Level (HA12228F) (1) 10 100 Hz 1 kHz 10 kHz VCC = 9 V TAI→PBOUT 0 dB = 300 mVrms 1 NR-OFF
T.H.D. (%)
0.1
0.01 −15
−10
−5 0 5 10 Output Level Vout (dB)
15
20
Rev.2.00 Jun 15, 2005 page 21 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Output Level (HA12228F) (2) 10 100 Hz 1 kHz 10 kHz VCC = 9 V TAI→PBOUT 0 dB = 300 mVrms 1 NR-ON
T.H.D. (%)
0.1
0.01 −15
−10
−5 0 5 10 Output Level Vout (dB)
15
20
Total Harmonic Distortion vs. Supply Voltage (HA12228F) (1) 1 100 Hz 1 kHz 10 kHz TAI→PBOUT = 300 mVrms NR-OFF 0.1
T.H.D. (%)
0.01
0.001 5
6
7
8 9 10 Supply Voltage (V)
11
12
13
Rev.2.00 Jun 15, 2005 page 22 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Supply Voltage (HA12228F) (2) 1 100 Hz 1 kHz 10 kHz TAI→PBOUT = 300 mVrms NR-ON 0.1
T.H.D. (%)
0.01
0.001 5
6
7
8 9 10 Supply Voltage (V)
11
12
13
Signal Handling (HA12228F) 40 35 30 25 20 15 10 5
0 6
NR-OFF NR-ON TAI→PBOUT = 300 mVrms f = 1 kHz, T.H.D. = 1%
Vomax (dB)
7
8
9
10 11 12 13 Supply Voltage (V)
14
15
16
Rev.2.00 Jun 15, 2005 page 23 of 48
HA12228F/HA12229F
Signal to Noise Ratio vs. Supply Voltage (HA12228F) 90
85
Signal to Noise Ratio (dB)
80
75
NR-OFF NR-ON TAI→PBOUT = 300 mVrms f = 1 kHz CCIR/ARM filter
70
65 6
7
8
9 10 11 Supply Voltage (V)
12
13
EQ Amp. Gain vs. Frequency (HA12228F) 70 60 50
EQ Gain (dB)
40 30 20 10 0 −10 10
120µ
70µ
VCC = 9 V Fin→EQOUT 100 1k 10k Frequency (Hz) 100k 1M
Rev.2.00 Jun 15, 2005 page 24 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Frequency (HA12228F) 1 120µ 70µ VCC = 9 V Fin→EQOUT Vout = +20 dB 0 dB = 60 mVrms
0.1
T.H.D. (%)
0.01
0.001 100
1k Frequency (Hz)
10k
20k
Total Harmonic Distortion vs. Output Level (HA12228F) (1) 10
1
T.H.D. (%)
0.1
0.01
100 Hz 1 kHz 10 kHz VCC = 9 V Fin→EQOUT 120µ 0 dB = 60 mVrms 0 5 10 15 20 25 Output Level Vout (dB) 30 35
0.001 −5
Rev.2.00 Jun 15, 2005 page 25 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Output Level (HA12228F) (2) 10
1
T.H.D. (%)
0.1
0.01
100 Hz 1 kHz 10 kHz VCC = 9 V Fin→EQOUT 70µ 0 dB = 60 mVrms
0.001 −5
0
5
10 15 20 25 Output Level Vout (dB)
30
35
Total Harmonic Distortion vs. Supply Voltage (HA12228F) (1) 1
0.1
T.H.D. (%)
0.01
100 Hz 1 kHz 10 kHz Fin→EQOUT 120µ 0 dB = 60 mVrms Vout = +10 dB
0.001 6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 26 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Supply Voltage (HA12228F) (2) 1
0.1
T.H.D. (%)
0.01
100 Hz 1 kHz 10 kHz Fin→EQOUT 70µ 0 dB = 60 mVrms Vout = +10 dB
0.001 6
7
8
9 10 11 Supply Voltage (V)
12
13
Signal Handling (HA12228F) (1) 40
Fin→EQOUT 120µ 0 dB = 60 mVrms f = 1 kHz T.H.D. = 1%
35
Vomax (dB)
30
25
20
15 6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 27 of 48
HA12228F/HA12229F
Signal Handling (HA12228F) (2) 40
Fin→EQOUT 70µ 0 dB = 60 mVrms f = 1 kHz T.H.D. = 1%
35
Vomax (dB)
30
25
20
15 6
7
8
9 10 11 Supply Voltage (V)
12
13
Signal to Noise Ratio vs. Supply Voltage (HA12228F) 80 75 70 65 60 55 50 45
40 6
120µ 70µ Fin→EQOUT 0 dB = 60 mVrms f = 1 kHz Din-Audio filter
Signal to Noise Ratio (dB)
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 28 of 48
HA12228F/HA12229F
Ripple Rejection Ratio vs. Frequency (HA12228F) (1) 20 10
NR-on NR-off VCC = 9 V Vin = 100 mVrms PBOUT
Ripple Rejection Ratio R.R.R. (dB)
0 −10 −20 −30 −40 −50 −60 10
100
1k Frequency (Hz)
10k
100k
Ripple Rejection Ratio vs. Frequency (HA12228F) (2) 20 10
70µs 120µs VCC = 9 V Vin = 100 mVrms EQOUT FOR mode
Ripple Rejection Ratio R.R.R. (dB)
0 −10 −20 −30 −40 −50 −60 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 29 of 48
HA12228F/HA12229F
Channel Separation vs. Frequency (HA12228F) (1)
VCC = 9 V Fin(L)→EQOUT(L→R) Vout = +12 dB
−40
−50
Channel Separation (dB)
−60
−70
−80
−90 10
100
1k Frequency (Hz)
10k
100k
−50
Channel Separation vs. Frequency (HA12228F) (2)
VCC = 9 V TAI(L)→PBOUT(L→R) Vout = +12 dB
−60
Channel Separation (dB)
−70
−80
−90
−100 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 30 of 48
HA12228F/HA12229F
Crosstalk vs. Frequency (HA12228F)
VCC = 9 V Fin(L)→Rin(L) EQOUT(L) Vout = +12 dB
−40
−50
Crosstalk (dB)
−60
−70
−80
−90 10
100
1k Frequency (Hz)
10k
100k
−40
VCC = 9 V TAI→PBOUT Vout = +12 dB
Mute Attenuation vs. Frequency (HA12228F)
−60
Mute Attenuation (dB)
−80
−100
−120
−140 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 31 of 48
HA12228F/HA12229F
MS Amp. Gain vs. Frequency (HA12228F) (1) 50
VCC = 9 V TAI (SER mode)
40
30
Gain (dB)
20
MAOUT
10
0 −10 −20 10
MSI
100
1k Frequency (Hz)
10k
100k
MS Amp. Gain vs. Frequency (HA12228F) (2) 50
MAOUT
40
30
Gain (dB)
20
MSI
10
0 −10 −20 10
VCC = 9 V TAI (REP mode)
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 32 of 48
HA12228F/HA12229F
MS Sensing Level vs. Frequency (HA12228F)
10 SER L→H SER H→L REP L→H REP H→L VCC = 9 V TAI→PBOUT f = 5 kHz 0 dB = 300 mVrms
0
MS Sensing Level (dB)
−10
−20
−30
−40 10
100
1k Frequency (Hz)
10k
100k
No-Signal Sensing Time vs. Resistance (HA12228F) 1000
SER 0 dB SER −5 dB SER −10 dB REP 0 dB REP −5 dB REP −10 dB VCC = 9 V TAI→PBOUT NR off f = 5 kHz
PBOUT
No-Signal Sensing Time (ms)
100
10
C10 0.33µ
14
MSOUT
VCC
R15
1 10k
100k Resistance R15 (Ω)
1M
10M
Rev.2.00 Jun 15, 2005 page 33 of 48
HA12228F/HA12229F
Signal Sensing Time vs. Capacitance (HA12228F)
1000
SER 0 dB SER −5 dB SER −10 dB REP 0 dB REP −5 dB REP −10 dB VCC = 9 V TAI→PBOUT NR off f = 5 kHz
PBOUT
Signal Sensing Time (ms)
100
10
MSOUT
C10
14 VCC
R15 330k
1 0.001
0.01
0.1 Capacitance C10 (µF)
1
10
Quiescent Current vs. Supply Voltage (HA12229F) 7
all "L" 120µ No signal
6.5
Quiescent Current (mA)
6
5.5
5
4.5
4
6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 34 of 48
HA12228F/HA12229F
Input Amp. Gain vs. Frequency (HA12229F) 30 VCC = 9 V TAI→PBOUT 20
Gain (dB)
10
0
−10
−20 10
100
1k 10k Frequency (Hz)
100k
1M
Total Harmonic Distortion vs. Frequency (HA12229F) 1 −10 dB 0 dB 10 dB VCC = 9 V TAI→PBOUT
0.1
T.H.D. (%)
0.01
0.001 100
1k Frequency (Hz)
10k
20k
Rev.2.00 Jun 15, 2005 page 35 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Output Level (HA12229F) 10
100 Hz 1 kHz 10 kHz VCC = 9 V TAI→PBOUT 0 dB = 300 mVrms
1
T.H.D. (%)
0.1
0.01 −15
−10
−5 0 5 10 Output Level Vout (dB)
15
20
Total Harmonic Distortion vs. Supply Voltage (HA12229F) 1
100 Hz 1 kHz 10 kHz TAI→PBOUT = 300 mVrms
0.1
T.H.D. (%)
0.01
0.001 5
6
7
8 9 10 Supply Voltage (V)
11
12
13
Rev.2.00 Jun 15, 2005 page 36 of 48
HA12228F/HA12229F
Signal Handling (HA12229F) 40 35 30 25 20 15 10 5
0 6 TAI→PBOUT = 300 mVrms f = 1 kHz, T.H.D. = 1%
Vomax (dB)
7
8
9
10 11 12 13 Supply Voltage (V)
14
15
16
Signal to Noise Ratio vs. Supply Voltage (HA12229F) 90
TAI→PBOUT = 300 mVrms f = 1 kHz CCIR/ARM filter
85
Signal to Noise Ratio (dB)
80
75
70
65 6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 37 of 48
HA12228F/HA12229F
EQ Amp. Gain vs. Frequency (HA12229F) 70 60 50
120µ
EQ Gain (dB)
40 30 20 10 0 −10 10
70µ
VCC = 9 V Fin→EQOUT 100 1k 10k Frequency (Hz) 100k 1M
Total Harmonic Distortion vs. Frequency (HA12229F) 1 120µ 70µ VCC = 9 V Fin→EQOUT Vout = +20 dB 0 dB = 60 mVrms
0.1
T.H.D. (%)
0.01
0.001 100
1k Frequency (Hz)
10k
20k
Rev.2.00 Jun 15, 2005 page 38 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Output Level (HA12229F) (1) 10
1
T.H.D. (%)
0.1
0.01
100 Hz 1 kHz 10 kHz VCC = 9 V Fin→EQOUT 120µ 0 dB = 60 mVrms
0.001 −5
0
5
10 15 20 25 Output Level Vout (dB)
30
35
Total Harmonic Distortion vs. Output Level (HA12229F) (2) 10
1
T.H.D. (%)
0.1
0.01
100 Hz 1 kHz 10 kHz VCC = 9 V Fin→EQOUT 70µ 0 dB = 60 mVrms
0.001 −5
0
5
10 15 20 25 Output Level Vout (dB)
30
35
Rev.2.00 Jun 15, 2005 page 39 of 48
HA12228F/HA12229F
Total Harmonic Distortion vs. Supply Voltage (HA12229F) (1) 1
0.1
T.H.D. (%)
0.01
100 Hz 1 kHz 10 kHz Fin→EQOUT 120µ 0 dB = 60 mVrms Vout = +10 dB
0.001 6
7
8
9 10 11 Supply Voltage (V)
12
13
Total Harmonic Distortion vs. Supply Voltage (HA12229F) (2) 1
0.1
T.H.D. (%)
0.01
100 Hz 1 kHz 10 kHz Fin→EQOUT 70µ 0 dB = 60 mVrms Vout = +10 dB
0.001 6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 40 of 48
HA12228F/HA12229F
Signal Handling (HA12229F) (1) 40
Fin→EQOUT 120µ 0 dB = 60 mVrms f = 1 kHz T.H.D. = 1%
35
Vomax (dB)
30
25
20
15 6
7
8
9 10 11 Supply Voltage (V)
12
13
Signal Handling (HA12229F) (2) 40
Fin→EQOUT 70µ 0 dB = 60 mVrms f = 1 kHz T.H.D. = 1%
35
Vomax (dB)
30
25
20
15 6
7
8
9 10 11 Supply Voltage (V)
12
13
Rev.2.00 Jun 15, 2005 page 41 of 48
HA12228F/HA12229F
Signal to Noise Ratio vs. Supply Voltage (HA12229F) 80 75 70 65 60 55 50 45
40 6
120µ 70µ Fin→EQOUT 0 dB = 60 mVrms f = 1 kHz Din-Audio filter
Signal to Noise Ratio (dB)
7
8
9 10 11 Supply Voltage (V)
12
13
Ripple Rejection Ratio vs. Frequency (HA12229F) (1) 20 10
VCC = 9 V Vin = 100 mVrms PBOUT
Ripple Rejection Ratio R.R.R. (dB)
0 −10 −20 −30 −40 −50 −60 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 42 of 48
HA12228F/HA12229F
Ripple Rejection Ratio vs. Frequency (HA12229F) (2) 20 10
120µs 70µs VCC = 9 V Vin = 100 mVrms EQOUT FOR mode
Ripple Rejection Ratio R.R.R. (dB)
0 −10 −20 −30 −40 −50 −60 10
100
1k Frequency (Hz)
10k
100k
−40
Channel Separation vs. Frequency (HA12229F) (1)
VCC = 9 V Fin(L)→EQOUT(L→R) Vout = +12 dB
−50
Channel Separation (dB)
−60
−70
−80
−90 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 43 of 48
HA12228F/HA12229F
Channel Separation vs. Frequency (HA12229F) (2)
VCC = 9 V TAI(L)→PBOUT(L→R) Vout = +12 dB
−50
−60
Channel Separation (dB)
−70
−80
−90
−100 10
100
1k Frequency (Hz)
10k
100k
−40
VCC = 9 V Fin(L)→Rin(L) EQOUT(L) Vout = +12 dB
Crosstalk vs. Frequency (HA12229F)
−50
Crosstalk (dB)
−60
−70
−80
−90 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 44 of 48
HA12228F/HA12229F
Mute Attenuation vs. Frequency (HA12229F)
VCC = 9 V TAI→PBOUT Vout = +12 dB
−40
−60
Mute Attenuation (dB)
−80
−100
−120
−140 10
100
1k Frequency (Hz)
10k
100k
MS Amp. Gain vs. Frequency (HA12229F) (1) 50
VCC = 9 V TAI (SER mode)
40
30
Gain (dB)
20
MAOUT
10
0 −10
MSI
−20 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 45 of 48
HA12228F/HA12229F
MS Amp. Gain vs. Frequency (HA12229F) (2) 50
40
MAOUT
30
Gain (dB)
20
10
MSI
0 −10
−20 10
VCC = 9 V TAI (REP mode)
100
1k Frequency (Hz)
10k
100k
MS Sensing Level vs. Frequency (HA12229F)
10 SER L→H SER H→L REP L→H REP H→L VCC = 9 V TAI→PBOUT f = 5 kHz 0 dB = 300 mVrms
0
MS Sensing Level (dB)
−10
−20
−30
−40 10
100
1k Frequency (Hz)
10k
100k
Rev.2.00 Jun 15, 2005 page 46 of 48
HA12228F/HA12229F
No-Signal Sensing Time vs. Resistance (HA12229F) 1000
SER 0 dB SER −5 dB SER −10 dB REP 0 dB REP −5 dB REP −10 dB VCC = 9 V TAI→PBOUT f = 5 kHz
No-Signal Sensing Time (ms)
100
PBOUT
10
C10 0.33µ
14
MSOUT
VCC
R15
1 10k
100k Resistance R15 (Ω)
1M
10M
Signal Sensing Time vs. Capacitance (HA12229F)
1000
SER 0 dB SER −5 dB SER −10 dB REP 0 dB REP −5 dB REP −10 dB VCC = 9 V TAI→PBOUT f = 5 kHz
Signal Sensing Time (ms)
100
PBOUT
10
MSOUT
C10
14 VCC
R15 330k
1 0.001
0.01
0.1 Capacitance C10 (µF)
1
10
Rev.2.00 Jun 15, 2005 page 47 of 48
HA12228F/HA12229F
Package Dimensions
JEITA Package Code P-LQFP40-7x7-0.65 RENESAS Code PLQP0040JB-A Previous Code FP-40B MASS[Typ.] 0.2g
HD
*1
D 21
NOTE) 1. DIMENSIONS"*1"AND"*2" DO NOT INCLUDE MOLD FLASH 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET.
30
31
20 bp b1
Reference Symbol
Dimension in Millimeters Min Nom 7.0 7.0 1.40 8.8 8.8 9.0 9.0 9.2 9.2 1.70 0.08 0.20 0.13 0.25 0.22 0.12 0.17 0.15 0° 0.65 0.13 0.10 0.575 0.575 0.40 0.50 1.0 0.60 8° 0.22 0.22 0.30 Max
c1
HE
E
c
D E A2
*2
ZE
Terminal cross section
HD HE A A1 bp
40
11
1 ZD Index mark
10 F
b1 c
A
A2
c
c1
θ
A1
L L1
θ
e x y ZD ZE L L1
Detail F
e
*3
bp y
x
M
Rev.2.00 Jun 15, 2005 page 48 of 48
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001
http://www.renesas.com
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 2.0
