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HA12231FP

HA12231FP

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HA12231FP - Audio Signal Processor for Car Deck (PB 1 Chip) - Renesas Technology Corp

  • 数据手册
  • 价格&库存
HA12231FP 数据手册
HA12231FP Audio Signal Processor for Car Deck (PB 1 Chip) REJ03F0135-0200 Previous: ADE-207-327A Rev.2.00 Jun 15, 2005 Description HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system in one chip. Functions • • • • PB equalizer Music sensor Line amp. Line mute × 2 channel × 1 channel × 2 channel × 2 channel Features • • • • • • No use external parts for PB equalizer. (Fixed characteristics built-in) Available to change music sensing level by external resistor. Available to change frequency response of music sensor by external capacitor. Different type of PB equalizer characteristics selection (120 µs/70 µs) is available. Line mute ON/OFF is available. This IC is strong for a cellular phone noise. Ordering Information Product HA12231FP Package Code (Previous Code) PRSP0020DD-A (FP-20DA) Functions PBOUT-Level 450 mVrms ❍ PB-EQ Music Sensor ❍ Mute ❍ Rev.2.00 Jun 15, 2005 page 1 of 22 HA12231FP Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage, Ta = 25°C, No Signal, The value in the table shows typical value.) Pin No. 16 5 Pin Name TAI(L) TAI(R) Note V = VCC/2 Equivalent Circuit Description Tape input V 100 k VCC/2 14 RIP V = VCC/2 VCC Ripple filter V GND 13 MS DET V = VCC Time constant pin for rectifier GND 15 6 PBOUT(L) PBOUT(R) V = VCC/2 VCC PB output V GND 1 17 4 VREF EQOUT(L) EQOUT(R) V = VCC/2 V = VCC/2 VCC Reference output Equalizer output (120 µ) V GND 11 19 18 3 2 VCC FIN(L) RIN(L) RIN(R) FIN(R)   Power supply Equalizer input V Note: MS: Music Sensor Rev.2.00 Jun 15, 2005 page 2 of 22 HA12231FP Pin Description, Equivalent Circuit (cont.) (VCC = 9 V, A system of single supply voltage, Ta = 25°C, No Signal, The value in the table shows typical value.) Pin No. 9 10 8 Pin Name Mute FOR/REV Note  Equivalent Circuit Description Mode control input 120/70 22 k 100 k GND 12 MS  I MS VCC MS output (to MPU) * 200 100 k D GND 7 MS GV V = VCC/2 MS gain pin * V 90 k 20 GND  GND pin Note: MS: Music Sensor Rev.2.00 Jun 15, 2005 page 3 of 22 HA12231FP Block Diagram EQOUT(L) PBOUT(L) MS DET RIN(L) FIN(L) TAI(L) DVCC MS GND + 20 19 18 17 16 I.A. 15 14 13 12 11 + − LPF + MA − RECT − + I.A. 1 2 3 4 5 6 7 + 8 9 10 VREF EQOUT(R) PBOUT(R) FIN(R) RIN(R) MS GV TAI(R) 120/70 Mute Absolute Maximum Ratings (Ta = 25°C) Item Supply voltage Power dissipation Operating temperature Storage temperature Symbol VCC Max Pd Topr Tstg Rating 15 400 −40 to +85 −55 to +125 V mW °C °C Ta ≤ 85°C Unit Note Rev.2.00 Jun 15, 2005 page 4 of 22 S/R FOR/REV VCC RIP MS + (Ta = 25°C, VCC = 9 V, PBOUT Level = 450 mVrms (= 0 dB)) Test Condition IC Condition Symbol IQ GVIA Vomax THD CT RL FIN/RIN FIN FIN FIN/RIN 0 0 0  EQOUT EQOUT EQOUT EQOUT 1k 10k 10k 1k Specification Application Terminal Input Output Remark HA12231FP Item Quiescent current Input AMP. gain Signal handling T.H.D. Channel separation 11     120µs 120µs 70µs THD = 1% PBOUT INPUT OUTPUT fin(Hz) level(dB) Other    No signal  1k PBOUT TAI 0 1k PBOUT TAI  THD = 1% 1k PBOUT TAI 0 1k PBOUT FIN 12 Min  22.5 12.0  50.0 Typ Max Unit mA 9 6.0 23.5 24.5 dB dB 13.0  % 0.05 0.3 dB 60.0  R  5 5 5 2 L  16 16 16 19 *1 Electrical Characteristics Rev.2.00 Jun 15, 2005 page 5 of 22 GV EQ 1k GV EQ 10k(1) GV EQ 10k(2) VOM THD-EQ VN Rg = 680Ω, Din-Audio Filter FIN/RIN EQOUT FIN/RIN EQOUT 0 (0) 1k (1k) PB-EQ gain PB-EQ maximum output   0.1 1.2 37.0 33.0 29.0 300 40.0 43.0 36.0 39.0 32.0 35.0 600  L R  15 6 6 15 6 15 6→ 15→ 6 15 dB 17 2/3 19/18 4 dB 17 4 19 2 dB 17 4 19 2 mVrms 2/3 19/18 4 17     *1 PB-EQ THD Noise voltage level converted in input VON VOL IOH Mute VIL VIH  TAI  No signal  1k  % 0.5 2/3 19/18 2.0 µVrms 2/3 19/18 dB 4 4 17 17   MS sensing level TAI  12  5k TAI 0 5k  −18.0 −14.0 −10.0  1.0 1.5 5 V 16 6 15 12 MS output low level 5 16 6 15 12 MS output leak current MUTE attenuation Control voltage PBOUT MSOUT PBOUT MSOUT MSOUT PBOUT   0.0 2.0 70.0 80.0  −0.2  1.0 3.5  VCC µA dB V  5   16  12 6  12 15    8, 9, 10 Note: 1. VCC = 7.2 V EQ PB TAI RIN FIN C14 22µ R14 680 R12 5.1k R8 3.9k +C7 100µ SW6 C10 2.2µ + C9 1µ R9 330k + + + C8 0.33µ C13 22µ R15 680 R13 5.1k C12 0.1µ + R10 10k DC SOURCE1 SW3 C11 0.47µ R11 10k SW8 HA12231FP Test Circuit PBL MS PBR SW13 DC VM Rev.2.00 Jun 15, 2005 page 6 of 22 20 19 18 17 16 15 14 13 12 11 MS RIP VCC GND + − MS I.A. TAI(L) FIN(L) LPF RECT + MA − − I.A. RIN(L) PBOUT(R) EQOUT(R) FOR/REV RIN(R) MS GV TAI(R) 120/70 Mute MS DET PBOUT(L) EQOUT(L) + FIN(R) 2 C5 2.2µ SW5 C3 0.1µ + C4 0.47µ + C6 0.01µ R7 24k R6 10k VREF 1 3 4 5 6 7 C1 22µ SW4 Rch TAI FIN RIN + + R1 680 C2 22µ R3 R2 5.1k 680 R4 5.1k 8 SW9 120 9 70 EXT SW10 OFF 10 ON EXT SW11 FOR AC VM2 REV EXT DC SOURCE2 DC SOURCE3 R5 10k Lch PB EQ SW7 Rch Distortion analyzer Oscillo scope Lch SW2 ON OFF SW1 AUDIO SG AC VM1 SW12 Noise meter NOISE METER WITH CCIR/ARM FILTER AND DIN/AUDIO FILTER Notes: 1. Resistor tolerance ±1% 2. Capacitor tolerance ±1% 3. Unit R: Ω, C: F HA12231FP Functional Description Power Supply Range HA12231FP is designed to operate on single supply only. Table 1 HA12231FP Supply Voltage Range Product 7.2 V to 12.0 V Single Supply Reference Voltage HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As the peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their usual value. The block diagram is shown as figure 1. 11 VCC + − MS block 20 14 RIP + + − 1 VREF to Line Amp. : Internal reference voltage C1 1µ Figure 1 The Block Diagram of Reference Supply Voltage Operating Mode Control HA12231FP provides fully electronic switching circuits. And each operating mode control are controlled by parallel data (DC voltage). When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even though as do not destruct it, in series for resistance. Table 2 Threshold Voltage (VTH) Lo −0.2 to 1.0 Hi 3.5 to VCC Unit V Test Condition Input Pin Measure V Pin No. 8, 9, 10 Table 3 8 9 10 Switching Truth Table Pin No. Pin Name 120/70 Mute FOR/REV Low 120 µ (Normal) Mute OFF Forward High 70 µ (Metal or Chrome) Mute ON Reverse Notes: 1. Each pins are on pulled down with 100 kΩ internal resistor. Therefore, it will be low-level when each pins are open. 2. Over shoot level and under shoot level of input signal must be the standardized. (High: VCC, Low: −0.2 V) 3. Reducing pop noise is so much better for 10 kΩ to 22 kΩ resisitor and 1 µF to 22 µF capacitor shown figure 2. Rev.2.00 Jun 15, 2005 page 7 of 22 HA12231FP Input Pin 10 to 22 kΩ + MPU 1 to 22 µF Figure 2 Interface for Reduction of Pop Noise Input Block Diagram and Level Diagram PBOUT Level HA12231FP: 450 mVrms (−4.7 dBs) 60mVrms (−22.2dBs) EQOUT R2 R1 5.1kΩ 5.1kΩ C1 0.1µF TAI 30mVrms (−28.2dBs) + Input Amp. − 0dB PBOUT EQ Amp. +− the other channel 23.5dB MUTE FIN RIN VREF PBIN 0.6mVrms (−62.2dBs) The each level shown above is typical value when offering PBOUT level to PBOUT pin. (EQ Amp. Gv = 40 dB, f = 1 kHz) Figure 3 Input Block Diagram Adjustment of Playback Reference Operate Level After replace R1 and R2 with a half-fix volume of 10 kΩ, adjust playback reference operate level. Rev.2.00 Jun 15, 2005 page 8 of 22 HA12231FP The Sensitivity Adjustment of Music Sensor Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensor block diagram is shown in figure 4, and frequency response is shown in figure 5. S/R VCC REX2 REX1 +CEX1 CEX2 16 R1 330kΩ + C1 0.33µF DVCC RL TAI(L) 23.5dB 7 MS Gv 13 MS DET 33.3kΩ −3.5dB 90kΩ − + RECT MS 12 GND 20 −6dB Micro computer LPF 25kHz MS Amp. 66.7kΩ 23.5dB 5 TAI(R) Figure 4 Music Sensor Block Diagram f3 Repeat mode (REP) GV2 f4 GV (dB) GV1 f1 Search mode (SER) f2 10 100 1k f (Hz) 10k 25k 100k Figure 5 Frequency Response Rev.2.00 Jun 15, 2005 page 9 of 22 HA12231FP 1. Search mode GV1 = (23.5dB − 3.5dB) + 20log 1 + 90k [dB] REX2 1 f1 = [Hz], f2 = 25k [Hz] 2π ⋅ CEX2 ⋅ REX2 2. Repeat mode GV2 = (23.5dB − 3.5dB) + 20log 1 + 90k [dB] REX1 1 f3 = [Hz], f4 = 25k [Hz] 2π ⋅ CEX1 ⋅ REX1 The sensitivity of music sensor (S) is computed by the formula mentioned below. S = 12.7 − GV [dB] S is 6 dB down in case of one-side channel. Notes: 1. Search mode: GV1, Repeat mode: G V2 2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms 3. Standard sensing level of music sensor = 130 mVrms S (one side channel) −14.8 dB −33.0 dB S (both channel) −20.8 dB −39.0 dB Item Search mode Repeat mode REX1, 2 24 kΩ 2.4 kΩ CEX1, 2 0.01 µF 1 µF GV1, 2 33.5 dB 51.7 dB f1, 3 663 Hz 66.3 Hz f2, 4 25 kHz 25 kHz Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level, in case of thresh S level constantly. Music Sensor Time Constant 1. 2. Sensing no signal to signal (Attack) is determined by C1, 0.01 µF to 1 µF capacitor C1 can be applicable. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 kΩ to 1 MΩ can be applicable. Music Sensor Output (MS(OUT)) As for the internal circuit of music sensor block, music sensor output pin is connected to the collector of NPN type directly, therefore, output level will be "high" when sensing no signal. And output level will be "low" when sensing signal. IL = DVCC − MS(OUT)LO* RL * MS(OUT)LO : Sensing signal (about 1V) Note: Supply voltage of MS (OUT) pin must be less than VCC voltage. Rev.2.00 Jun 15, 2005 page 10 of 22 HA12231FP Characteristic Curves EQOUT Noise Output vs. Transmission Frequency 0 EQOUT(L), VCC = 9 V, Vin = 0 dBm, 120 µs FIN(L) RIN(L) toward Cellular phone noise −10 EQOUT Noise Output (dBs) −20 −30 −40 −50 −60 100 1000 Transmission Frequency (MHz) 10000 EQOUT Noise Output vs. Transmission Signal Input Level 0 −10 EQOUT Noise Output (dBs) −20 −30 −40 −50 −60 −70 −80 −50 EQOUT(L), VCC = 9 V, 120 µs, f = 900 MHz FIN(L) RIN(L) toward Cellular phone noise −40 −30 −10 0 −20 High Frequency Input Vin (dBm) 10 20 Rev.2.00 Jun 15, 2005 page 11 of 22 HA12231FP Quiescent Current vs. Supply Voltage 7.0 No signal 70 µ 6.5 Quiescent Current (mA) 6.0 5.5 5.0 4.5 4.0 4 6 8 10 Supply Voltage (V) 12 14 16 Input Amp. Gain vs. Frequency 25 20 Gain (dB) 15 10 5 VCC = 9 V, TAI → PBOUT 0 10 100 1k 10k Frequency (Hz) 100k 1M Rev.2.00 Jun 15, 2005 page 12 of 22 HA12231FP Total Harmonic Distortion vs. Frequency 1 TAI → PBOUT, 0 dB = 450 mVrms, VCC = 9 V, Mute off −10 dB 0 dB 10 dB 0.1 T.H.D. (%) 0.01 30 kHz LPF 400 Hz HPF + 30 kHz LPF 400 Hz HPF + 80 kHz LPF 0.001 10 100 1k Frequency (Hz) 10k 100k Total Harmonic Distortion vs. Output Level 10 TAI → PBOUT, 0 dB = 450 mVrms, VCC = 9 V, Mute off 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) 1 T.H.D. (%) 0.1 0.01 −15 −10 −5 5 0 Output Level Vout (dB) 10 15 20 Rev.2.00 Jun 15, 2005 page 13 of 22 HA12231FP Total Harmonic Distortion vs. Supply Voltage 1 TAI → PBOUT = 450 mVrms, Mute off 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) 0.1 T.H.D. (%) 0.01 0.001 4 6 8 10 Supply Voltage (V) 12 14 16 Signal Handling 30 TAI → PBOUT, 0 dB = 450 mVrms, Mute off, f = 1 kHz, T.H.D. = 1% PBOUT(L) PBOUT(R) 25 20 Vomax (dB) 15 10 5 0 4 6 8 10 Supply Voltage (V) 12 14 16 Rev.2.00 Jun 15, 2005 page 14 of 22 HA12231FP Equalizer Amp. Gain vs. Frequency 70 60 50 EQ Gain (dB) 40 30 20 FIN → EQOUT, VCC = 9 V 120 µ 70 µ 100 1k Frequency (Hz) 10k 10 0 10 100k Signal to Noise Ratio vs. Supply Voltage 70 FIN → EQOUT, Vout = 0 dB = 60 mVrms, DIN-AUDIO filter 120 µs 70 µs 65 Signal to Noise Ratio (dB) 60 55 50 45 40 4 6 8 10 Supply Voltage (V) 12 14 16 Rev.2.00 Jun 15, 2005 page 15 of 22 HA12231FP Total Harmonic Distortion vs. Frequency 10 FIN → EQOUT, Vout = +20 dB, 0 dB = 60 mVrms 120 µs 70 µs 1 T.H.D. (%) 0.1 30 kHz LPF 400 Hz HPF + 30 kHz LPF 400 Hz HPF + 80 kHz LPF 0.01 100 1k Frequency (Hz) 10k 100k Total Harmonic Distortion vs. Output Level (120 µs) 100 10 FIN → EQOUT, 0 dB = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) T.H.D. (%) 1 0.1 0.01 −5 0 5 10 15 20 Output Level Vout (dB) 25 30 35 Rev.2.00 Jun 15, 2005 page 16 of 22 HA12231FP Total Harmonic Distortion vs. Output Level (70 µs) 100 10 FIN → EQOUT, 0 dB = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) T.H.D. (%) 1 0.1 0.01 −5 0 5 10 15 20 Output Level Vout (dB) 25 30 35 Total Harmonic Distortion vs. Supply Voltage (120 µs) 10 FIN → EQOUT, Vout = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) 1 T.H.D. (%) 0.1 0.01 4 6 8 10 Supply Voltage (V) 12 14 16 Rev.2.00 Jun 15, 2005 page 17 of 22 HA12231FP Total Harmonic Distortion vs. Supply Voltage (70 µs) 10 FIN → EQOUT, Vout = 60 mVrms, VCC = 9 V 100 Hz (30 kHz LPF) 1 kHz (400 Hz HPF + 30 kHz LPF) 10 kHz (400 Hz HPF + 80 kHz LPF) 1 T.H.D. (%) 0.1 0.01 4 6 8 10 Supply Voltage (V) 12 14 16 Signal Handling 45 FIN, RIN → EQOUT, 120 µs, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1% FIN RIN 40 35 Vomax (dB) 30 25 20 15 4 6 8 10 Supply Voltage (V) 12 14 16 Rev.2.00 Jun 15, 2005 page 18 of 22 HA12231FP Signal Handling 45 FIN, RIN → EQOUT, 70 µs, 0 dB = 60 mVrms, f = 1 kHz, T.H.D. = 1% FIN RIN 40 35 Vomax (dB) 30 25 20 15 4 6 8 10 Supply Voltage (V) 12 14 16 Crosstalk vs. Frequency (CTRL) 0 −10 −20 FIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF L→R R→L Crosstalk (dB) −30 −40 −50 −60 −70 −80 10 100 1k Frequency (Hz) 10k 100k Rev.2.00 Jun 15, 2005 page 19 of 22 HA12231FP Crosstalk vs. Frequency (CTRL) 0 −10 −20 RIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms), 80 kHz LPF L→R R→L Crosstalk (dB) −30 −40 −50 −60 −70 −80 10 100 1k Frequency (Hz) 10k 100k MS Amp. Sensitivity vs. Frequency 10 TAI → PBOUT, VCC = 9 V, 0 dB = 450 mVrms SER L→H SER H→L REP L→H REP H→L 0 MS Sensing Level (dB) −10 −20 −30 −40 10 100 1k Frequency (Hz) 10k 100k Rev.2.00 Jun 15, 2005 page 20 of 22 HA12231FP No-Signal Sensing Time vs. Resistance 1000 TAI → PBOUT, VCC = 9 V, f = 5 kHz, MSOUT L → H SER 0 dB No-Signal Sensing Time (ms) 100 10 PBOUT MSOUT 1 10k 100k Resistance R10 (Ω) 1M 10M Signal Sensing Time vs. Capacitance 1000 TAI → PBOUT, VCC = 9 V, f = 5 kHz, MSOUT H → L SER 0 dB Signal Sensing Time (ms) 100 10 1 PBOUT MSOUT 0.1 0.001 0.01 0.1 Capacitance C8 (µF) 1 10 Rev.2.00 Jun 15, 2005 page 21 of 22 HA12231FP Package Dimensions JEITA Package Code P-SOP20-5.5x12.6-1.27 RENESAS Code PRSP0020DD-A Previous Code FP-20DA MASS[Typ.] 0.31g *1 D F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 20 11 bp b1 HE c1 E Index mark Reference Symbol *2 c Dimension in Millimeters Min Nom 12.6 5.5 Max 13 Terminal cross section D E 1 Z e *3 10 bp A2 A1 0.00 0.10 0.20 2.20 0.34 0.42 0.40 0.17 1 x M L1 A bp b1 c c 0.50 0.22 0.20 0.27 A θ HE 0° 7.50 7.80 1.27 8° 8.00 θ A1 y L e x y 0.12 0.15 0.80 0.50 1 Detail F Z L L 0.70 1.15 0.90 Rev.2.00 Jun 15, 2005 page 22 of 22 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
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