HA16341FP

HA16341NT/FP, HA16342NT/FP Redundant Secondary Switching Power Supply Controller REJ03F0148-0400 (Previous: ADE-204-035C) Rev.4.00 Jun 15, 2005 Description The HA16341NT/FP and the HA16342NT/FP are switching regulator control ICs for the off-line converters of redundant power supplies. The HA16342NT/FP is reverse current detection less version of the HA16341NT/FP. The HA16341NT/FP have the functions of current sharing and hot swap control for redundancy. These functions enable high efficiency and high reliability for switching power supplies. Combination the HA16341 with the HA16141 is suitable for the redundant AC to DC converters. Features • • • • • • • • • • • • • • Secondary-side synchronous rectification control Main switching controller Dead-time adjustment for synchronous rectification MOS Current share function with line resistance compensation Hot swap power MOS FET control Remote on/off function, FAIL output function Synchronized switching with primary side Soft start function Maximum duty adjustment Overcurrent limiting, overcurrent shutdown functions Reverse current detection (only the HA16341NT/FP) Light load detection OVP function VCC pin UVL function Ordering Information Type No. HA16341NT HA16342NT HA16341FP HA16342FP DP-24TS FP-26DT Package Code Rev.4.00 Jun 15, 2005 page 1 of 19 HA16341NT/FP, HA16342NT/FP Pin Arrangement HA16341NT, HA16342NT (DP-24TS) HA16341FP, HA16342FP (FP-26DT) CS(+) CS(−) MT CB Cin SGND PGND PG1 FAIL Trig CT SS DB 1 2 3 4 5 6 TAB 7 8 9 10 11 12 24 23 22 21 20 19 TAB 18 17 16 15 14 13 CF(+) CF(−) CFo CFB EIN EOUT PGND CS(+) CS(−) MT CB Cin SGND PGND PGND 1 2 3 4 5 6 7 26 25 24 23 22 21 20 TAB 19 18 17 16 15 14 (Top view) CF(+) CF(−) CFo CFB EIN EOUT PGND TAB 8 9 10 11 12 13 PGND MF OUT VCC MR OUT PWM OUT HSP Vref MF OUT VCC MR OUT PWM OUT HSP Vref PG1 FAIL Trig CT SS DB (Top view) Pin Functions Pin No. DP-24TS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TAB 1 2 3 4 5 6 8 9 10 11 12 13 14 15 16 17 18 19 21 22 23 24 25 26 TAB, 7, 20 FP-26DT Symbol CS(+) CS(−) MT CB Cin SGND PG1 FAIL Trig CT SS DB Vref HSP PWM OUT MR OUT VCC MF OUT EOUT EIN CFB CFo CF(–) CF(+) PGND Pin Name Current sense amp input (+) Current sense amp input (–) Current sense amp output Current bus output Line resistance compensation input Signal ground Remote on/off FAIL output (open-drain) External synchronization input Timing capacitance Soft start Dead band Vref (5 V) Hot swap output PWM output MR output Power supply voltage MF output Error amp output Error amp input Current share feedback output Current share differential amp output Current share differential amp input (–) Current share differential amp input (+) Power ground Rev.4.00 Jun 15, 2005 page 2 of 19 HA16341NT/FP, HA16342NT/FP Block Diagram Current share input Error amp. CS(+) + − OP1 + 2R − + EIN CT' +− VZ = 1.24V R 1.25V CS(−) R + − Point B 26dB 19R CT level compression 2R EOUT VZ = 6.8V R 2R OP1-2 MT OCL S Q latch D R Q + 0dB − R 2R 1.25V R 2R OP5 − 0dB + OP6 CFB CB + OP3 − 1.25V + OP4 1k 1k SW2 CF(+) − Cin + − OP2 6dB CS(+) CF(−) R E/IN = 95% comp. S latch A R Q SW2 on at HSP Hi SGND PG1 R RS-FF S2 + − + − OCL E/IN 1.187V from B 1.25V − + −12mV CFo Start-up latch initial: Hi 20dB + − Light load detector − TAB PGND to latch B reset Start-up latch initial: Lo Reverse current comp. (only HA16341) Hi: PWM ON TAB + Hi: 0.7V Lo: 0.5V 10k 90k PGND DB generator Dead Band adjust Driver HSP Driver 16 pulse delay MF OUT PWM OUT Driver UVL1 VCC + − Vref UVL2 SS comp. SS − + S1 RS-FF S latch B Q R Vref UVL2 Hi: stop Driver MR OUT Vref 5V 169µA OVP SW1 on: 1.3V SW1 off: 3.4V PG1 + − from Trig 7.5V DB CT 100k 128.5k Vref 5V + − 50k Trig − + 2.5V Exit trigger control Delay S Q latch C R Q RS-FF 939µA + − SW1 PG1 Hi: 2.5V Lo: 2.0V FAIL Oscillator FAIL Unit R: Ω C: F Rev.4.00 Jun 15, 2005 page 3 of 19 HA16341NT/FP, HA16342NT/FP Absolute Maximum Ratings (Ta = 25°C) Ratings Unit Note Supply Voltage VCC 18 V DC output current1 Io1 ±0.1 A PWM OUT *1 Peak output current1 Iopeak1 ±1.0 A PWM OUT *2 DC output current2 Io2 ±0.2 A MF OUT *1 Peak output current2 Iopeak2 ±2.0 A MF OUT *2 DC output current3 Io3 ±0.1 A MR OUT *1 Peak output current3 Iopeak3 ±1.0 A MR OUT *2 DC output current4 Io4 – mA CB OUT DC output current5 Io5 ±500 µA CFB OUT DC output current6 Io6 20 mA FAIL OUT DC output current7 Io7 –5.0 mA Vref OUT Peak output current4 Iopeak4 0.5 A HSP sink DC output current8 Io8 ±500 µA MT OUT DC output current9 Io9 ±500 µA CFo OUT DC output current10 Io10 6 mA EOUT sink TRIG terminal voltage Vtrigmax –1.5 to VCC V CT terminal voltage VCTmax –0.3 to Vref V Vref terminal voltage Vrefmax –0.3 to Vref V SS terminal voltage Vssmax –0.3 to Vref V EIN terminal voltage VEINmax –0.3 to Vref V EOUT terminal voltage VEOUTmax –0.3 to VCC V PG1 terminal voltage VPG1max –0.3 to Vref V FAIL terminal voltage VFAILmax –0.3 to VCC V PWM OUT terminal voltage VoPWMmax –0.3 to VCC V MR OUT terminal voltage VoMRmax –0.3 to VCC V MF OUT terminal voltage VoMFmax –0.3 to VCC V HSP terminal voltage VoHSPmax –0.3 to VCC V CFB terminal voltage VCFBmax –0.3 to Vref V CS(+) terminal voltage VCS(+)max –0.3 to Vref V CS(–) terminal voltage VCS(−)max –0.3 to Vref V MT terminal voltage VMTmax –0.3 to Vref V Cin terminal voltage VCinmax –0.3 to Vref V Notes: 1. VDS = 10 V max. Therefore test condition must be VOH = VCC –10 V or over , VOL = 10 V or under. 2. VDS = 10 V max. Pulse duration ≤ 10 ms Item Symbol Rev.4.00 Jun 15, 2005 page 4 of 19 HA16341NT/FP, HA16342NT/FP Absolute Maximum Ratings (cont.) (Ta = 25°C) Item Symbol Ratings Unit Note CF(+) terminal voltage VCF(+)max –0.3 to Vref V CF(−) terminal voltage VCF(−)max –0.3 to Vref V CFo terminal voltage VCFomax –0.3 to Vref V CB terminal voltage VCBmax –0.3 to Vref V DB terminal voltage VDBmax –0.3 to Vref V Maximum power dissipation PT 4.17 W 1 Operating temperature Topr –40 to +105 °C Storage temperature Tstg –55 to +150 °C Junction temperature Tj 150 °C Note: 1. This is allowable value up to Ta = 25°C. Derate by θj-a = 30°C/W above that temperature. θj-a = 30°C/W is the case that HA16341NT is mounted on 30% wiring density glass epoxy board (105 mm × 76.2 mm × 1.6 mmt) and HA16341FP is mounted on a board which thermal resistance is 23°C/W because of θj-pin (SOP) = 7°C/W typ. 5.0 Maximum Power Dissipation PT (W) 4.5 4.17 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 −50 −30 −10 30 50 70 90 110 10 Ambient Temperature Ta (°C) 130 150 170 Rev.4.00 Jun 15, 2005 page 5 of 19 HA16341NT/FP, HA16342NT/FP Electrical Characteristics (Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB, GvOP4 = 40dB, RDB = 1.8kΩ) • Current share Item CB output Hi voltage CB output Lo voltage CFB output Lo voltage CFB output typ voltage OP1 input offset voltage CS(+) input bias current CS(−) input bias current Cin input bias current OP4 input resistance Open loop gain OP1−OP6 Band width OP1−OP6 OCL detector threshold voltage Light load detector threshold Hi voltage Light load detector threshold Lo voltage VthLL hysteresis Reverse current detector threshold Hi voltage Symbol VCBH VCBL VCFBL VCFBtyp VioOP1 IibCS(+) IibCS(−) IibCin Rsin Avo BWCS VthOCL VthHLL VthLLL dVthLL VthRC Min 2.5 – – 1.19 – – – – 0.75 (70) – 59.5 (2.0) (1.0) (0.5) –6 Typ – – – 1.25 – –20 0.2 0.2 1.00 80 700 62.5 3.5 2.5 1.0 –12 Max – 25 100 1.31 (1) –30 1.0 1.0 1.25 – – 65.5 (5.0) (4.0) (1.5) –18 Unit V mV mV V mV µA µA µA kΩ dB kHz mV mV mV mV mV CS(+) terminal voltage sensing CS(+) terminal voltage sensing CS(+) terminal voltage sensing CS(+) terminal voltage sensing 1 1 1 3 Test Conditions Iosource = 300µA VCS(+) = 1V VCS(+) = 0V, RCB = 10kΩ Iosink = 100µA, HSP ON VCS(+) = 0V, VCB = 0.1V VCS(+) = 0V, VCB = 0V RfOP4 = 1kΩ, HSP ON 1 VCS(+) = 0V, VCS(–) = 0V VCS(+) = 0V, VCS(–) = 0V Vcin = 0V 1, 2 1 1 Note Notes: 1. Design spec. 2. Temperature coefficient is 5400ppm/°C. 3. Only HA16341NT/FP. • Hot swap Item HSP ON threshold voltage HSP charge current HSP output Lo voltage Symbol VthHSP IcHSP VOLHSP Min 1.14 –7 – Typ 1.19 –10 0.3 Max 1.23 –13 0.6 Unit V µA V Test Conditions 95% typ of reference 1.25V VHSP = 5V, VEIN = 2V VEIN = 1V, Iosink = 50mA Note Rev.4.00 Jun 15, 2005 page 6 of 19 HA16341NT/FP, HA16342NT/FP Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB, GvOP4 = 40dB, RDB = 1.8kΩ) • Oscillator Item Typical oscillating frequency Maximum oscillating frequency Typical oscillating temperature stability CT charge current CT discharge current Upper trip point Lower trip point Amplitude Exit trigger Vth Symbol fosctyp foscmax dfosc Ici Icd VthCTH VthCTL dVCT Vthtrig Min 180 400 – –135 616 – – – –0.3 Typ 200 – ±5 –169 770 3.4 1.3 2.1 –0.5 Max 220 – – –203 924 – – – –0.7 Unit kHz kHz % µA µA V V V V –20°C < Ta < 85°C 1 ±20% ±20% 2 Test Conditions Note ±10% Notes: 1. Design spec. 2. In case of external trigger control, CCT should be changed from 330 pF to 430 pF. At this synchronous and 430 pF CCT condition VthCTH becomes about 2.9 V. • Vref Item Reference voltage Line regulation Load regulation Temperature stability Note: 1. Design spec. Symbol Vref Vref-line Vref-load dVref Min 4.9 – – – Typ 5.0 5 5 80 Max 5.1 20 20 – Unit V mV mV ppm/°C Test Conditions Iosource = 1mA Iosource = 1mA 12V < VCC < 18V 0 < Iosource < 3mA –20°C < Ta < 85°C Note ±2% 1 • UVL Item Hi threshold voltage Lo threshold voltage Hysteresis Symbol VH VL dVUVL Min 9.5 8.5 0.6 Typ 10.0 9.0 1.0 Max 10.5 9.5 1.4 Unit V V V Test Conditions Note Rev.4.00 Jun 15, 2005 page 7 of 19 HA16341NT/FP, HA16342NT/FP Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB, GvOP4 = 40dB, RDB = 1.8kΩ) • PG1 Item PG1 threshold Hi voltage PG1 threshold Lo voltage Input impedance Note: 1. Design spec. Symbol VthHPG1 VthLPG1 RinPG1 Min 2.4 1.9 (37.5) Typ 2.5 2.0 50.0 Max 2.6 2.1 (62.5) Unit V V kΩ Test Conditions Note 1 • FAIL Item Leak current Output Lo voltage Symbol IleakFAIL VOLFAIL Min – – Typ – – Max –10 0.5 Unit µA V Test Conditions VFAIL = 5V Iosink = 10mA Note • Error amp. Item Input threshold voltage Input bias current Open loop gain Band width EOUT sink current EOUT source current EOUT clamp voltage EOUT Lo voltage Note: 1. Design spec. Symbol VthEIN IibEIN AvoEA BWEA IosinkEA IosourceEA VOHEA VOLEA Min 1.23 – 60 (0.7) 0.5 –100 5.8 – Typ 1.25 –0.2 80 1.4 5.0 –250 6.8 – Max 1.27 –2.0 – – – – 7.8 1.0 Unit V µA dB MHz mA µA V V Test Conditions VEOUT = 1.25V VEIN = 2V 1 VEIN = 1.5V, EOUT = 1.1V VEIN = 1.0V, EOUT = 5V VEIN = 1.0V VEIN = 1.5V, Iosink = 200µA Note ±1.6% • PWM OUT Item Output Lo voltage Output Hi voltage Rise time Fall time Maximum duty Minimum duty Note: 1. Design spec. Symbol VOLPWM VOHPWM trPWM tfPWM Dmax Dmin Min – VCC−0.4 20 20 58 – Typ 0.2 VCC−0.2 50 50 65 – Max 0.4 – 100 100 72 0 Unit V V ns ns % % Test Conditions Iosink = 100mA Iosource = 100mA CL = 3300pF CL = 3300pF VSS = 4V, VEIN = 1.0V VSS = 4V, VEIN = 1.5V Note Rev.4.00 Jun 15, 2005 page 8 of 19 HA16341NT/FP, HA16342NT/FP Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB, GvOP4 = 40dB, RDB = 1.8kΩ) • MR OUT Item Output Lo voltage Output Hi voltage Rise time Fall time Symbol VOLMR VOHMR trMR tfMR Min – VCC−0.4 20 20 Typ 0.2 VCC−0.2 50 50 Max 0.4 – 100 100 Unit V V ns ns Test Conditions Iosink = 100mA Iosource = 100mA CL = 3300pF CL = 3300pF Note • MF OUT Item Output Lo voltage Output Hi voltage Rise time Fall time Symbol VOLMF VOHMF trMF tfMF Min – VCC−0.4 20 20 Typ 0.2 VCC−0.2 50 50 Max 0.4 – 100 100 Unit V V ns ns Test Conditions Iosink = 200mA Iosource = 200mA CL = 6000pF CL = 6000pF Note • Dead band time Item Dead band time1 Dead band time2 MR to MF delay time PWM to MR delay time MR delay time Maximum Dead band adjust time1 Maximum Dead band adjust time2 Note: Symbol Td1typ Td2typ t1 t2 t3 Tdadj1 Tdadj2 Min 0 0 (−20) (−20) – – – Typ 50 100 – – 1 Td1typ +300 Td2typ +600 Max 100 200 (50) (50) – – – Unit ns ns ns ns µs ns ns Test Conditions RDB = 1.8kΩ RDB = 1.8kΩ t1 = MF off − MR on t2 = MR off − PWM off t3 = CT low trip point – MR on RDB = 47kΩ RDB = 47kΩ Note 1 1 1 1 1 1. Design spec. Measurement is 50% slice point. Rev.4.00 Jun 15, 2005 page 9 of 19 HA16341NT/FP, HA16342NT/FP Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12V, PG1 = 3V, Vtrig = 0V, VCS(+) = 0V, VCin = 0V, CCT = 330pF, GvOP1 = 26dB, GvOP4 = 40dB, RDB = 1.8kΩ) • SS Item SS sink current Symbol Idss Min 500 Typ – Max – Unit µA Test Conditions PG1 = 2V, VSS = 2V Note • OVP Item OVP latch voltage Symbol VOVP Min 6.5 Typ 7.5 Max 8.5 Unit V Test Conditions Note • Current consumption Item Operating current Standby current Symbol ICC ISTBY Min 5.4 – Typ 7.4 200 Max 9.4 600 Unit mA µA Test Conditions VCT = 1V VCC = 8V, PG1 = 0V Note Rev.4.00 Jun 15, 2005 page 10 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 1 (Total) UVL1 Hi 10.0V typ 0V VCC UVL1 Lo 9.0V typ Vref (5V typ) 0V PG1 (by switch) 0V 3V ON UVL2 threshold 4.6V typ OFF ON UVL2 (internal) 0V SS 0V VthCTH: 3.4V typ CT VthCTL: 1.3V typ 0V OUT (PWM) 0V 1.25V (100%) 1.187V (95%) EIN 0V Note 1 OUT (HSP) 0V Note: 1. The output of PWM, MR and MF do not appear in the first period of CT cycle due to start-up latch circuit. Rev.4.00 Jun 15, 2005 page 11 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 2 (Hot Swap) Vref 0V 3V PG1 0V Internal latch signal (inverting) (OVP, OCL or Reverse current) : Node S1 in Block Diagram 0V SET RESET UVL2 (internal) 0V 1.25V (100%) 1.187V (95%) EIN 0V Internal latch signal : Node S2 in Block Diagram 0V HSP out 0V Gate charging by 10µA source current Gate discharging by 0.5A max sink current Note: Reverse current is HA16341NT/FP only. Rev.4.00 Jun 15, 2005 page 12 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 3 (Dead Band Control) VSS CT PWM OUT MR OUT MF OUT Td1 Td2 t1 t2 t3 Note: VSS determines maximum duty. This waveform example shows the case of EIN = Lo. VSS: Voltage of SS pin 800 700 600 Td1, Td2 (ns) Td1 Td2 Vref RDB HA16341 DB 500 400 300 200 100 0 0 10 20 30 40 50 RDB (kΩ) Rev.4.00 Jun 15, 2005 page 13 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 4 (Soft Start) VthCTH: 3.4V Note * CT SS CT SS VthCTL: 1.3V OUT (PWM) Note: Self-oscillation: VthCTH = 3.4V typ Synchronized operation: VthCTH = 2.9V typ Case VHSS ≥ VthCTH Maximum duty would be the value specified in page 9. Case VHSS < VthCTH Maximum duty decrease to the corresponding value. Please refer to formula 1 as design value of maximum duty. Max duty = (tss − 0.63µs − Td1) × Operating frequency ⋅ ⋅ ⋅ ⋅ ⋅ Formula 1 C tss = CT (VHSS − VthCTL) Ici : CT charge current Ici : CT terminal capacitor CCT VthCTH : CT upper trip point VthCTL : CT lower trip point Select values R1, R2 and C1 for suitable maximum duty and SS time constant. Vref (5V) R1 C1 R2 HA16341 SS VHSS = R2 Vref (5V) R1 + R2 SS C R1 R2 R1 + R2 Figure A. SS Terminal Application Rev.4.00 Jun 15, 2005 page 14 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 5 (External Trigger Control) Primary IC oscillation 0V Primary IC AUX-OUT 0V Trigger input (Trig terminal) 0V Trigger Vth Vtrig: −0.5V typ Trigger detector internal signal 0V VthCTH = about 2.9V @CCT = 430pF Secondary oscillation 0V This IC is triggered by negative pulse. R1 and R2 must be calculated including internal impedance of 230kΩ. Primary Secondary Vref (5V) R1 230k Trig HA16341 Primary IC AUX-OUT R2 Figure B. External Trigger Application Rev.4.00 Jun 15, 2005 page 15 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 6 (Duty Control) CT' + Vo OP1-2 (internal) 300mV CT' + Vo OP1-2 1/3×(EOUT−2VBE) 1/3×(EOUT−2VBE) (internal) OUT (PWM) CT 5.33 The amplitude of CT' is 300mV typ at synchronous operation with trigger frequency as 200kHz and CCT = 430pF. CT' = 1.3 1.24 1.2 1.1 1.0 0.9 0.8 1/3×(EOUT−2VBE) 1.24V clamp Duty control area No output area in case of 50% max duty 0.7 Vo OP1-2 (V) 0.6 0.5 0.4 300mV 0.3 0.2 0.1 0 0 Max duty area 1.54V 2.44V 5.26V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 VEOUT (V) Rev.4.00 Jun 15, 2005 page 16 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 7 (Current Limitting) 1/3×(EOUT−2VBE) = 1.24V clamped (internal) CT' + Vo OP1-2 300mV (internal) OUT (PWM) CT 5.33 The amplitude of CT' is 300mV typ at synchronous operation with trigger frequency as 200kHz and CCT = 430pF. CT' = 70 60 PWM ON Duty (%) 50 40 30 20 10 0 20 CCT = 430pF, RDB = 1.8kΩ, VHSS = 4V Synchronized operation with 200kHz 30 40 50 60 70 CS(+) (mV) Rev.4.00 Jun 15, 2005 page 17 of 19 HA16341NT/FP, HA16342NT/FP Timing Chart 8 (Interface with Primary Control IC) Vref PG1 (from primary IC) Internal latch signal (inverting) (OVP, OCL or Reverse current) : Node S1 in Block Diagram SET RESET UVL2 (internal signal) OUT (PWM) FAIL (to primary IC) Note: Reverse current is HA16341NT/FP only. Rev.4.00 Jun 15, 2005 page 18 of 19 HA16341NT/FP, HA16342NT/FP Package Dimensions As of January, 2003 Unit: mm 27.10 28.10 Max 24 13 8.8 10.0 Max 1 1.0 1.5 Max 12 5.06 Max 10.16 0.51 Min 2.54 Min 1.78 ± 0.25 4.04 ± 0.20 0.48 ± 0.10 0.25 – 0.05 1° − 13 ° + 0.10 Package Code JEDEC JEITA Mass (reference value) DP-24TS − − 2.04 g As of January, 2003 18.4 19.2 Max 26 14 Unit: mm 3.0 Max *0.32 ± 0.07 0.30 ± 0.05 1 1.20 Max 13 8.3 10.93 + 0.15 − 0.25 1.315 2.8 3.6 0.10 − 0.10 + 0.15 0.80 0° − 8° 0.70 − 0.20 + 0.15 *0.37 ± 0.08 0.35 ± 0.06 0.16 M 0.10 *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-26DT − − 0.98 g Rev.4.00 Jun 15, 2005 page 19 of 19 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0