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HA31006ANP

HA31006ANP

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HA31006ANP - SiGe MMIC High Frequency Low Noise Amplifier - Renesas Technology Corp

  • 数据手册
  • 价格&库存
HA31006ANP 数据手册
HA31006ANP SiGe MMIC High Frequency Low Noise Amplifier REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Features • • • • Ideal for 2.4 / 5 GHz Band applications. e.g. 2.4 / 5 GHz Band Wireless LAN Low Noise (1.3 dB @ 2.4 GHz, 1.7 dB @ 5.2 GHz) High Gain (20 dB @ 2.4 GHz, 16 dB @ 5.2 GHz) 8 Pin, Lead less, Small mounting area (HWQFN-8 : 2.0 × 2.0 × 0.8 mm) Outline RENESAS package code: PWQN0008ZA-A (Package name: HWQFN-8 ) 9 4 4 9 5 6 7 5 76 6 L00xx xx 8 3 12 3 2 1 8 1. Vctrl 2. RFout 3. GND 4. GND 5. GND 6. RFin 7. GND 8. GND 9. GND Absolute Maximum Ratings (Ta = 25°C) Item Supply Voltage Maximum Current Maximum Input Power Power Dissipation Operating temperature Storage temperature Notes: Specified condition Symbol VCC ICC Pin max Pt Tcop Tstg Ratings 4 15 +5 60 Note –10 to +85 –55 to +150 Unit V mA dBm mW °C °C REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 1 of 10 HA31006ANP Electrical Characteristics (Ta = 25°C) Item Supply Current Symbol ICC Min. — — Noise Figure NF — — Power Gain PG — — Input Return Loss Rlin — — Output Return Loss Rlout — 24 — 10 21 — — dB 16 11 — — dB 1.7 20 — — dB Typ 6 1.3 Max. — — dB Unit mA Test Conditions No RF signal f = 2.35 to 2.55 GHz VCC = 3 V, Vctrl = 1.8 V f = 5 to 6 GHz VCC = 3 V, Vctrl = 1.8 V f = 2.35 to 2.55 GHz VCC = 3 V, Vctrl = 1.8 V f = 5 to 6 GHz VCC = 3 V, Vctrl = 1.8 V f = 2.35 to 2.55 GHz VCC = 3 V, Vctrl = 1.8 V f = 5 to 6 GHz VCC = 3 V, Vctrl = 1.8 V f = 2.35 to 2.55 GHz VCC = 3 V, Vctrl = 1.8 V f = 5 to 6 GHz VCC = 3 V, Vctrl = 1.8 V Main Characteristics Supply Current vs. Contorol Voltage 30 30 Supply Current vs. Contorol Voltage VCC = 3 V 1.5 kΩ added in the Vctrl term. Supply Current Icc (mA) 25 20 15 10 5 0 1.5 Supply Current Icc (mA) 2.0 2.5 VCC = 3 V 25 20 15 10 5 0 1.5 2.0 2.5 3.0 3.5 Contorol Voltage Vctrl (V) Contorol Voltage Vctrl (V) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 2 of 10 HA31006ANP 2.4 GHz Characteristics Evaluation Board Circuit VCC = 3 V C4 1000 pF C1 2 pF RFin L1 1 nH GND GND RFin GND GND RFout Vctrl RFout C2 1 pF GND C3 1000 pF Vctrl = 1.8 V Pin - Pout Characteristics Pin - Pout Characteristics 30 25 PG 3rd. Order Intermodulation Distortion 20 VCC = 3 V Vctrl = 1.8 V f = 2.4 GHz Fundamental (1tone) Output Power Pout (dBm) Power Gain PG (dB) 20 20 0 Pout / IMD3 (dBm) Iope (mA) 10 Pout 15 -20 0 Iope 10 VCC = 3 V Vctrl = 1.8 V f = 2.4 GHz -40 IMD3 (2 tone: ∆f = 1 MHz) -10 5 0 0 -60 -80 -40 -20 -30 -25 -20 -15 -10 -5 -30 -20 -10 0 Input Power Pin (dBm) Input Power Pin (dBm) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 3 of 10 HA31006ANP Power Gain, Noise Figure vs. Control Voltage 30 25 20 15 10 5 0 1.5 NF PG 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2.5 Power Gain, Noise Figure vs. Frequency 30 25 PG 20 3.0 2.5 2.0 1.5 1.0 0.5 0.0 3.0 Noise Figure NF (dB) 15 10 5 NF 0 2.0 VCC = 3 V Vctrl = 1.8 V 2.5 VCC = 3 V f = 2.4 GHz 2.0 Frequency f (GHz) Control Voltage Vctrl (V) S Parameter vs. Frequency 30 20 S Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 S Parameter (dB) S21 10 0 -10 -20 -30 0 1 .2 4 5 10 S11 S22 0 .2 .4 .6 .8 1 1.5 2 3 45 –10 –5 –4 –3 S11 S22 –.2 VCC = 3 V Vctrl = 1.8 V 2 3 4 5 6 –.4 –2 –.6 –.8 –1 –1.5 Frequency f (GHz) Condition: VCC = 3 V, Vctrl = 1.8 V f = 2.0 to 3.0 GHz (0.1 GHz step) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 4 of 10 Noise Figure NF (dB) Power Gain PG (dB) Power Gain PG (dB) HA31006ANP 2.4 GHz Characteristics (Vctrl 1.5 kΩ) Evaluation Board Circuit VCC = 3 V C5 10 pF C1 2 pF RFin L1 1 nH GND GND RFin GND GND GND RFout Vctrl C6 1000 pF RFout C2 1 pF R1 1.5 kΩ C3 10 pF Vctrl = 2.5 V C4 1000 pF Pin - Pout Characteristics Pin - Pout Characteristics 30 25 PG 20 3rd. Order Intermodulation Distortion VCC = 3 V Vctrl = 2.5 V f = 2.4 GHz Fundamental (1 tone) Output Power Pout (dBm) Power Gain PG (dB) 20 20 0 10 Pout 15 Pout / IMD3 (dBm) Iope (mA) -20 0 Iope -10 -20 -30 VCC = 3 V Vctrl = 2.5 V f = 2.4 GHz -25 -20 -15 -10 -5 0 10 -40 IMD3 (2 tone: ∆f = 1 MHz) 5 0 -60 -80 -40 -30 -20 -10 0 Input Power Pin (dBm) Input Power Pin (dBm) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 5 of 10 HA31006ANP Power Gain, Noise Figure vs. Control Voltage 30 3.0 2.5 PG 2.0 1.5 1.0 10 5 0 1.5 VCC = 3 V f = 2.4 GHz 2.0 2.5 3.0 0.5 Power Gain, Noise Figure vs. Frequency 30 25 PG 20 15 10 5 0 2.0 2.0 1.5 1.0 0.5 0.0 3.0 3.0 2.5 Noise Figure NF (dB) 20 15 NF NF VCC = 3 V Vctrl = 2.5 V 2.5 0.0 3.5 Frequency f (GHz) Control Voltage Vctrl (V) S Parameter vs. Frequency 30 20 S Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 S Parameter (dB) S21 10 0 -10 -20 -30 S11 S22 –.2 0 .2 4 5 10 .2 .4 .6 .8 1 1.5 2 3 45 –10 –5 –4 –3 S22 S11 VCC = 3 V Vctrl = 2.5 V 0 1 2 3 4 5 6 –.4 –2 –.6 –.8 –1 –1.5 Frequency f (GHz) Condition: VCC = 3 V, Vctrl = 2.5 V f = 2.0 to 3.0 GHz (0.1 GHz step) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 6 of 10 Noise Figure NF (dB) Power Gain PG (dB) Power Gain PG (dB) 25 HA31006ANP 5 GHz Characteristics Evaluation Board Circuit VCC = 3 V C5 10 pF C1 0.6 pF RFin GND GND RFin GND GND RFout Vctrl C6 1000 pF RFout C2 1000 pF R1 1.5 kΩ GND C4 0.3 pF C7 10 pF Vctrl = 3 V C8 1000 pF S Parameter vs. Frequency 20 10 S21 S Parameter vs. Frequency .8 .6 .4 3 .2 4 5 1 1.5 2 S Parameter (dB) 0 -10 -20 -30 -40 S11 0 S11 .2 .4 S22 .6 .8 1 1.5 2 3 45 10 S22 –.2 –3 –10 –5 –4 –.4 –2 –.6 –.8 –1.5 –1 VCC = 3 V Vctrl = 3 V 5.2 5.4 5.6 5.8 -50 5.0 6.0 Frequency f (GHz) Condition: VCC = 3 V, Vctrl = 3 V f = 4.0 to 6.0 GHz (0.1 GHz step) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 7 of 10 HA31006ANP 5.35 GHz Characteristics Power Gain, Noise Figure vs. Frequency 18 16 Power Gain, Noise Figure vs. Control Voltage 20 4 6 5 Noise Figure NF (dB) PG 15 3 14 12 4 3 NF 10 NF 2 10 8 6 5.0 VCC = 3 V Vctrl = 3 V 2 1 0 6.0 5 1 VCC = 3 V f = 5.35 GHz 0 1.8 2.1 2.4 2.7 3.0 3.3 5.2 5.4 5.6 5.8 0 3.6 Frequency f (GHz) Pin - Pout Characteristics Pin - Pout Characteristics 20 20 PG Control Voltage Vctrl (V) 3rd. Order Intermodulation Distortion 20 VCC = 3 V Vctrl = 3 V f = 5.35 GHz Fundamental (1 tone) Output Power Pout (dBm) Power Gain PG (dB) Pout Pout / IMD3 (dBm) 10 16 0 Iope (mA) 0 Iope 12 -20 -10 8 VCC = 3 V 4 Vctrl = 3 V f = 5.35 GHz 0 -10 0 -40 IMD3 (2 tone: ∆f = 1 MHz) -20 -60 -30 -40 -30 -20 -80 -40 -30 -20 -10 0 Input Power Pin (dBm) Input Power Pin (dBm) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 8 of 10 Noise Figure NF (dB) PG Power Gain PG (dB) Power Gain PG (dB) HA31006ANP 5.85 GHz Characteristics Power Gain, Noise Figure vs. Frequency 18 16 Power Gain, Noise Figure vs. Control Voltage 20 4 6 PG 5 4 Noise Figure NF (dB) 15 3 14 12 3 NF 10 NF 2 10 8 6 5.0 VCC = 3 V Vctrl = 3 V 2 1 0 6.0 5 1 VCC = 3 V f = 5.85 GHz 0 1.8 2.1 2.4 2.7 3.0 3.3 5.2 5.4 5.6 5.8 0 3.6 Frequency f (GHz) Pin - Pout Characteristics Pin - Pout Characteristics 20 PG Control Voltage Vctrl (V) 3rd. Order Intermodulation Distortion 20 20 Output Power Pout (dBm) Power Gain PG (dB) Pout / IMD3 (dBm) 10 Pout 16 0 VCC = 3 V Vctrl = 3 V f = 5.85 GHz Fundamental (1 tone) Iope (mA) 0 Iope 12 -20 -10 8 VCC = 3 V 4 Vctrl = 3 V f = 5.85 GHz 0 -10 0 -40 IMD3 (2 tone: ∆f = 1 MHz) -20 -60 -30 -40 -30 -20 -80 -40 -30 -20 -10 0 Input Power Pin (dBm) Input Power Pin (dBm) REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 9 of 10 Noise Figure NF (dB) PG Power Gain PG (dB) Power Gain PG (dB) HA31006ANP Package Dimensions Package Name HWQFN-8 JEITA Package Code P-HWQFN8-2x2-0.65 RENESAS Code PWQN0008ZA-A Previous Code TNP-8TV MASS[Typ.] 0.009g B D A b x MS A B 0.90 Lp C0.15 ZE ZD y1 S e Reference Symbol 0.05 0.60 E Dimension in Millimeters S S A1 y D E A A1 A2 b e Lp x y y1 ZD ZE Min 1.965 1.965 0.70 0 Nom 2.00 2.00 0.75 Max 2.075 2.075 0.80 0.05 A 0.3 0.65 0.35 0.10 0.08 0.10 0.350 0.225 Ordering Information Part No. HA31006ANPTL-E Quantity 3000 pcs. Shipping Container φ178 mm reel, 8 mm emboss taping REJ03F0174-0300 Rev.3.00 Jul 31, 2007 Page 10 of 10 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a result of errors or omissions in the information included in this document. 6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products. 7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall have no liability for damages arising out of the uses set forth above. 8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below: (1) artificial life support devices or systems (2) surgical implantations (3) healthcare intervention (e.g., excision, administration of medication, etc.) (4) any other purposes that pose a direct threat to human life Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all damages arising out of such applications. 9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages arising out of the use of Renesas products beyond such specified ranges. 10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products. Renesas shall have no liability for damages arising out of such detachment. 12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas. 13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have any other inquiries. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: (21) 5877-1818, Fax: (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: (2) 796-3115, Fax: (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2007. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .7.0
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