HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0406-0100 Rev.1.00 Sep.10.2004
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
SOP-8
78 DD 56 DD 5 76
2 G
4 G
8
3 12 S1 S3
4
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 Ratings HAT1126R –60 ±20 –6.0 –48 HAT1126RJ –60 ±20 –6.0 –48 Unit V V A A A mJ W W °C °C
Avalanche current IAPNote4 — –6.0 Note4 Avalanche energy EAR — 3.08 Channel dissipation PchNote2 2 2 Channel dissipation PchNote3 3 3 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00 Sep. 10, 2004 page 1 of 7
HAT1126R, HAT1126RJ
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Symbol V(BR)DSS Min –60 ±20 — — — — –1.0 4.0 — — — — — — — — — — — — — — Typ — — — — — — — 7.0 40 60 2300 230 140 37 6.5 8 20 15 55 10 –0.85 30 Max — — –1 — –10 ±10 –2.5 — 50 85 — — — — — — — — — — –1.1 — Unit V V µA µA µA µA V S mΩ mΩ pF pF pF nC nC nC ns ns ns ns V ns Unit ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VDS = –48 V, VGS = 0 Ta = 125°C VGS = ±16 V, VDS = 0 VDS = –10 V, ID = –1 mA ID = –3.0 ANote5, VDS = –10 V ID = –3.0 ANote5, VGS = –10 V ID = –3.0 ANote5, VGS = –4.5 V VDS = –10 V, VGS = 0 f = 1 MHz VDD = –25 V VGS = –10 V ID = –6.0 A VGS = –10 V, ID= –3.0 A VDD ≅ –30 V RL = 10 Ω RG = 4.7 Ω IF = –6.0 A, VGS = 0Note5 IF = –6.0 A, VGS = 0 diF/dt = 100 A / µs
Gate to Source breakdown voltage V(BR)GSS Zero gate voltage drain current IDSS HAT1126R IDSS Zero gate voltage drain current HAT1126RJ IDSS Gate to source leak current IGSS Gate to source cutoff voltage VGS(off) Forward transfer admittance |yfs| Static drain to source on state RDS(on) resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate to source charge Qgs Gate to drain charge Qgd Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 5. Pulse test td(on) tr td(off) tf VDF trr
Rev.1.00 Sep. 10, 2004, page 2 of 7
HAT1126R, HAT1126RJ
Main Characteristics
Power vs. Temperature Derating 4.0
Pch (W)
–100
(A)
Test condition. When using the glass epoxy board. (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)
Maximum Safe Operation Area 10 µs
10 0 µs
3.0
–10
1
D
ID
C
O
PW
s m
Channel Dissipation
pe
=
Drain Current
ra
10
2.0
1 Dr ive
–1
tio
m
n
s
1.0
Op
2 Dr
er
(P
–0.1
Operation in this area is limited by R DS(on) Ta = 25°C 1 shot Pulse –0.1 –1
W
ive
at
< No 10 te6 s)
ion at er Op
ion
0
50
100
150 Ta (°C)
200
–0.01 –0.01
–10
–100
Ambient Temperature
Drain to Source Voltage VDS (V) Note 6: When using the glass epoxy board. ( FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics –10 VDS = –10 V Pulse Test –8
Typical Output Characteristics –10
(A)
–10 V –4 V
Pulse Test
(A)
–8 –3 V
ID
–6
Drain Current
ID Drain Current
–6
–4
–4 Tc = 75°C 25°C −25°C –1 –2 –3 Gate to Source Voltage –4 –5 VGS (V)
–2 VGS = –2.5 V 0 –1 –2 –3 Drain to Source Voltage –4 –5 VDS (V)
–2
0
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (mV) Drain to Source On State Resistance
Pulse Test –300
RDS(on) (mΩ)
–400
Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 500 200 100 VGS = –4.5 V 50 –10 V
–200
ID = –5 A –3 A
–100 –1 A 0 –5 –10 –15 VGS Gate to Source Voltage –20 (V)
20 10 –1
–3
–10 ID
–30 (A)
–100
Drain Current
Rev.1.00 Sep. 10, 2004, page 3 of 7
HAT1126R, HAT1126RJ
Static Drain to Source on State Resistance vs. Temperature 160 Pulse Test 120 –1 A 80 VGS = –4.5 V –3 A Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS(on) (mΩ)
Forward Transfer Admittance |yfs| (S)
100 30 10 3 1 0.3 0.1 0.03
Tc = –25°C
–5 A
25°C 75°C
40 –10 V 0
–50 –25 0 25
ID = –1, –3, –5 A
50
75
100 125
150
0.01 –0.01 –0.03 –0.1 –0.3
VDS = –10 V Pulse Test –1 –3 –10
Case Temperature
Tc
(°C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
100
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse Recovery Time
10000 3000
Capacitance C (pF)
50
Ciss
20 10 5 di / dt = 50 A / µs VGS = 0, Ta = 25°C –0.3 –1 –3 IDR (A) –10
1000 300 Coss 100 Crss 30 V = 0 GS f = 1 MHz 10 0 –10
2 1 –0.1
–20
–30
–40 (V)
–50
Reverse Drain Current
Drain to Source Voltage VDS Switching Characteristics 0
VGS (V)
Dynamic Input Characteristics 0 VDD = –50 V –25 V –10 V
(V)
1000 300 100 30 10 3 1 –0.1 tf td(on) td(off) tr
Drain to Source Voltage VDS
–40 VDS
–8
–60
–12 VGS –16 –20 160
–80 ID = –6 A 16
–100 0
VDD = –50V –25V –10V 32 48 64 Qg (nc)
Gate to Source Voltage
Switching Time t (ns)
–20
–4
VGS = –10 V, VDD = –30 V PW = 5 µs, RG = 4.7 Ω, duty ≤ 1 % –0.3 –1 Drain Current ID –3 (A) –10
Gate Charge
Rev.1.00 Sep. 10, 2004, page 4 of 7
HAT1126R, HAT1126RJ
Reverse Drain Current vs. Source to Drain Voltage –10 V –8
Pulse Test
–10
Reverse Drain Current IDR (A)
–6
–5 V
–4
VGS = 0, 5 V
–2
0
–0.4 –0.8 –1.2 Source to Drain Voltage
–1.6
VSD (V)
–2.0
10
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
θch – f(t) = γs (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6mm)
u tp lse
PDM PW T
0.001
1s ho
D=
PW T
0.0001 10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
Normalized Transient Thermal Impedance γs (t)
1
D=1 0.5
0.1
0.2
0.1
0.05
0.01
0.02 0.01
θch – f(t) = γs (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
ls pu e
PDM PW T
0.001
1s ho t
D=
PW T
0.0001 10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Rev.1.00 Sep. 10, 2004, page 5 of 7
HAT1126R, HAT1126RJ
Avalanche Test Circuit Avalanche Waveform
V DS Monitor
L I AP Monitor
EAR =
1 2
L • I AP •
2
VDSS VDSS - V DD
V (BR)DSS VDD I AP V DS ID
Rg Vin -15 V
D. U. T
50 Ω VDD
0
Switching Time Test Circuit
Switching Time Waveform
Vin Vin Monitor Rg D.U.T. RL 90% Vin -10 V V DD = -10 V Vout td(on) 10% tr td(off) 10% tf Vout Monitor 10% 90% 90%
Rev.1.00 Sep. 10, 2004, page 6 of 7
HAT1126R, HAT1126RJ
Package Dimensions
As of January, 2003
Unit: mm
4.90 5.3 Max 5 8
1
4
3.95
*0.22 ± 0.03 0.20 ± 0.03
1.75 Max
0.75 Max
6.10 – 0.30
+ 0.10
1.08 0˚ – 8˚
+ 0.67
0.14 – 0.04
+ 0.11
1.27
0.60 – 0.20
*0.42 ± 0.08 0.40 ± 0.06
0.15 0.25 M
*Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g
Ordering Information
Part Name HAT1126R-EL-E HAT1126RJ-EL-E Quantity 2500 pcs 2500 pcs Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.1.00 Sep. 10, 2004, page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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