Preliminary
HAT2038R, HAT2038RJ
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• • • • For Automotive Application (at Type Code “J”) Low on-resistance Capable of 4 V gate drive High density mounting REJ03G1167-0600 Rev.6.00 Aug 25, 2009
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD 56 DD
65 87 12 34
2 G
4 G
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
S1 MOS1
S3 MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2038R HAT2038RJ Avalanche energy HAT2038R HAT2038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 4
Note 1
Value 60 ±20 5 40 5 — 5 — 2.14 2 3 150 –55 to +150
Unit V V A A A — A — mJ W W °C °C
EAR Note 4 Pch Note 2 Pch Tch Tstg
Note 3
PW ≤ 10 μs, duty cycle ≤ 1% 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 1 of 7
HAT2038R, HAT2038RJ
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current HAT2038R Zero gate voltage drain current HAT2038RJ Zero gate voltage drain current HAT2038R HAT2038RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS IDSS IDSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min 60 ±20 — — — — — 1.2 — — 6 — — — — — — — — — Typ — — — — — — — — 0.043 0.056 9 520 270 100 11 40 110 80 0.84 40 Max — — ±10 1 0.1 — 10 2.2 0.058 0.084 — — — — — — — — 1.1 — Unit V V μA μA μA μA μA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 μA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, ID = 1 mA ID = 3 A, VGS = 10 V Note 5 ID = 3 A, VGS = 4 V Note 5 ID = 3 A, VDS = 10 V Note 5 VDS = 10 V VGS = 0 f = 1 MHz VGS = 10 V, ID = 3 A, VDD ≅ 30 V
IF = 5 A, VGS = 0 Note 5 IF = 5 A, VGS = 0 diF/dt = 50 A/μs
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 2 of 7
HAT2038R, HAT2038RJ
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0 100 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 30
Maximum Safe Operation Area
10 μs
Pch (W)
ID (A)
10
PW
3.0
10 3 1 0.3 0.1
0μ
s
Channel Dissipation
DC
=
Drain Current
Op
10
1m
s
2.0
1 Dr ive
er
ms
2 Dr
Op
at
1.0
Operation in this area is limited by RDS (on)
ion
(1
sh
te
ive
er
(P
W
≤1
No
ot)
er Op at ion
at ion
0
6
s)
0
0
50
100
150
200
0.03 Ta = 25°C 1 shot Pulse 0.01 0.1 0.3 1
3
10
30
100
Ambient Temperature
Ta (°C)
Drain to Source Voltage
VDS (V)
Note 6: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
Typical Output Characteristics
10 10 V 8 4V 3.5 V Pulse Test 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
(A)
(A) ID Drain Current
3V
8
ID
6
6 25°C 4 Tc = 75°C –25°C 2
Drain Current
4 2.5 V 2 VGS = 2 V 0 0 2 4 6 8 10
0 0 1 2 3 4 5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
VDS (on) (V)
Pulse Test 0.4
Drain to Source on State Resistance RDS (on) (Ω)
0.5
1.0 Pulse Test 0.5
Drain to Source Voltage
0.3 ID = 5 A 0.2 2A 1A 0 0 4 8 12 16 20
0.2 0.1 VGS = 4 V 0.05 10 V 0.02 0.01 0.1 0.3 1 3 10 30 100
0.1
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 3 of 7
HAT2038R, HAT2038RJ
Static Drain to Source on State Resistance vs. Temperature
0.20 Pulse Test 0.16 1, 2 A ID = 5 A 0.08 VGS = 4 V
Preliminary
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
50 VDS = 10 V Pulse Test 20 Tc = –25°C 10 5 75°C 25°C
Static Drain to Source on State Resistance RDS (on) (Ω)
0.12
2 1 0.5 0.1
0.04 10 V 0 –40 0 40
1, 2, 5 A
80
120
160
0.2
0.5
1
2
5
10
Case Temperature
Tc
(°C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
2000 1000
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
200 100 50
500 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20
Ciss
Coss
Crss
20 10 5 0.1 di / dt = 50 A / μs VGS = 0, Ta = 25°C 0.2 0.5 1 2 5 10
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 5 A VGS 16
Switching Characteristics
VGS (V)
20 1000 300 td(off) 100 tf 30 10 3 1 0.1 tr td(on)
100
80
Drain to Source Voltage
60
VDS
12 VDD = 10 V 25 V 50 V
40
8
20
VDD = 50 V 25 V 10 V 0 8 16 24 32 40
4
Gate to Source Voltage
Switching Time t (ns)
0
0
VGS = 10 V, VDD = 30 V PW = 5 μs, duty ≤ 1 % 0.2 0.5 1 2 5 10
Gate Charge
Qg (nc)
Drain Current
ID (A)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 4 of 7
HAT2038R, HAT2038RJ
Reverse Drain Current vs. Source to Drain Voltage
10
Preliminary
Maximum Avalanche Energy vs. Channel Temperature Derating
2.5 IAP = 5 A VDD = 25 V L = 100 μH duty < 0.1 % Rg ≥ 50 Ω
8
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
2.0
6 10 V 4 5V VGS = 0, –5 V
1.5
1.0
2 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0
0.5
0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10
1
D=1 0.5
0.1
0.2 0.1
0.05
0.01
0.02 0.01
θch – f (t) = γ s (t) • θch – f θch – f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
lse
PDM PW T 1m 10 m 100 m 1 10 100
D=
0.001
h 1s
PW T
ot
pu
0.0001 10 μ
100 μ
1000
10000
Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10
1
D=1 0.5
0.1
0.2 0.1
0.05
0.01
0.02 0.01
θch – f (t) = γ s (t) • θch – f θch – f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm)
e
PDM PW T 1m 10 m 100 m 1 10 100
D=
0.001
1 o sh
tp
uls
PW T
0.0001 10 μ
100 μ
1000
10000
Pulse Width PW (S)
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 5 of 7
HAT2038R, HAT2038RJ
Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD
Preliminary
VDS Monitor
L IAP Monitor
EAR =
V(BR)DSS IAP VDD ID VDS
Rg
D.U.T
Vin 15 V
50 Ω VDD
0
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
50 Ω
VDD = 30 V td(on)
90% tr
90% td(off) tf
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 6 of 7
HAT2038R, HAT2038RJ
Preliminary
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
* 3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Symbol
Dimension in Millimeters
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
8° 0° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part Name HAT2038R-EL-E HAT2038RJ-EL-E Quantity 2500 pcs 2500 pcs Taping Taping Shipping Container
REJ03G1167-0600 Rev.6.00 Aug 25, 2009 Page 7 of 7
Sales Strategic Planning Div.
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Colophon .7.2