HAT2058RJ

HAT2058R/HAT2058RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-934 (Z) 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 76 3 12 78 DD 56 DD 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2058R/HAT2058RJ Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Symbol VDSS VGSS ID I D (pulse) I DR I AP EAR Pch Pch Channel temperature Storage temperature Notes: 1. 2. 3. 4. Tch Tstg Note4 Note4 Note2 Note3 Note1 HAT2058R 100 ±20 4 32 4 — — 2 3 150 –55 to +150 HAT2058RJ 100 ±20 4 32 4 4 1.6 2 3 150 –55 to +150 Unit V V A A A A mJ W W °C °C PW ≤ 10 µs, duty cycle ≤ 1% 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Value at Tch = 25°C, Rg ≥ 50 Ω 2 HAT2058R/HAT2058RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Zero gate voltage drain current HAT2058R Symbol Min V(BR)DSS V(BR)GSS I DSS 100 ±20 — — — — — 1.0 3 — — — — — — — — — — — Typ — — — — — — — — 5 120 150 420 180 100 10 30 110 60 0.85 75 Max — — 1 0.1 — 10 ±10 2.5 — 145 180 — — — — — — — 1.1 — Unit V V µA µA µA µA µA V S mΩ mΩ pF pF pF ns ns ns ns V ns I F = 4 A, VGS = 0*1 I F = 4 A, VGS = 0 diF/dt = 50 A/µs VGS = 10 V, ID = 2 A VDD ≅ 30 V VDS = 80 V, VGS = 0 Ta = 125°C VGS = ±16 V, V DS = 0 VDS = 10 V, ID = 1 mA I D = 2 A*1, VDS = 10 V I D = 2 A*1, VGS = 10 V I D = 2 A*1, VGS = 4 V VDS = 10 V, VGS = 0 f = 1 MHz Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 HAT2058RJ I DSS HAT2058R I DSS HAT2058RJ I DSS I GSS VGS(off) |yfs| RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Note: 1. Pulse test trr 3 HAT2058R/HAT2058RJ Main Characteristics Power vs. Temperature Derating Test condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW < 10 s Maximum Safe Operation Area 4.0 Pch (W) 100 30 ID (A) 10 3 Drain Current 1 10 µs 10 DC PW 3.0 0µ 1 = 10 s m Channel Dissipation 2.0 Op s 2 ive Dr O 1 er Dr ati ive 1.0 Op 0.3 this area is 0.1 Operation in limited by RDS(on) on ms pe tio ra n (P No W te < 10 5 er at ion s) 0 50 100 150 Ta (°C) 200 Ambient Temperature Ta = 25°C 0.03 1 shot Pulse 1 Drive Operation 0.01 0.1 0.3 1 3 10 Drain to Source Voltage 30 100 VDS (V) Note 6: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Typical Output Characteristics 20 10 V 16 ID (A) 6V 12 4.0 V Pulse Test ID (A) 8 10 Typical Transfer Characteristics V DS = 10 V Pulse Test 6 Drain Current 8 Drain Current 4 4 V GS = 2.0 V 0 2 4 6 Drain to Source Voltage 8 10 VDS (V) 2 Tc = 75°C 25°C -25°C 4 5 VGS (V) 0 1 2 3 Gate to Source Voltage 4 HAT2058R/HAT2058RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) Pulse Test Drain to Source on State Resistance RDS(on) (Ω) 1 Static Drain to Source on State Resistance vs. Drain Current 0.5 0.8 0.2 VGS = 4 V 10 V 0.6 ID=4A 0.4 2A 0.2 1A 0.1 0.05 0.02 Pulse Test 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0 12 4 8 Gate to Source Voltage 16 20 VGS (V) Drain Current ID (A) Static Drain to Surce on State Resistance RDS(on) (Ω) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 4A 0.3 0.2 0.1 10 V 0 -40 0 40 80 120 Case Temperature Tc (°C) 160 I D =1, 2 A 50 20 Forward Transfer Admittance vs. Drain Current Tc = -25°C 10 5 75°C 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 ID (A) 30 100 25°C V GS = 4 V 1, 2A 4A Drain Current 5 HAT2058R/HAT2058RJ Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 di / dt = 50 A / µs V GS = 0, Ta = 25°C Capacitance C (pF) 5000 2000 1000 500 200 100 50 20 10 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) 0 VGS = 0 f = 1 MHz 10 20 30 Drain to Source Voltage 40 50 VDS (V) Crss Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 Coss 20 10 0.1 Dynamic Input Characteristics VDS (V) ID=4A V DD = 80 V 50 V 25 V V DS 80 8 VGS (V) 200 20 1000 300 Switching Time t (ns) Switching Characteristics 160 16 V GS Gate t o Source Voltage t d(off) 100 tf 30 10 3 1 0.1 tr t d(on) Drain to Source Voltage 120 12 40 VDD = 80V 50V 25V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 Drain Current ID (A) 100 0 6 HAT2058R/HAT2058RJ Reverse Drain Current vs. Source to Drain Voltage 10 IDR (A) Pulse Test 8 EAR (mJ) 2.5 I AP = 4 A V DD = 50 V L = 100 µH duty < 0.1 % Rg > 50 Ω Maximum Avalanche Energy vs. Channel Temperature Derating 2.0 6 10 V 4 5V V GS = 0, -5 V Repetive Avalanche Energy Reverse Drain Current 1.5 1.0 2 0.5 0 25 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) 50 75 100 Channel Temperature 125 150 Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • IAP • 2 VDSS VDSS — VDD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 Ω 0 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin 10 V V DD = 30 V Vout Monitor Vin Vout 50 Ω 10% 10% 90% td(on) tr 90% td(off) tf 10% VDD Switching Time Waveform 90% 7 HAT2058R/HAT2058RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation) 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 p ot uls e 0.01 θ ch-f(t) =γ s (t)• θ ch - f θ ch-f = 125°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 0.001 1s h D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 PW (S) 10 100 1000 10000 Pulse Width Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation) 10 Normalized Transient Thermal Impedance γ s (t) 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 uls e 0.01 θ ch-f(t) = γ s (t) • θch - f θ ch-f = 166°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) PDM PW T 0.001 1s h p ot D= PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 PW (S) 10 100 1000 10000 Pulse Width 8 HAT2058R/HAT2058RJ Package Dimensions Unit: mm 8 5.0max. 4.8min. 7 6 0~8° 5 0.15max. 1.27max. 0.4min. 6.2max. 5.8min. 4.0max. 3.8min. Pin No. 1 2 3 4 0.25max. 0.19min. 1.75max. 1.35min. 0.51max. 0.33min. 0.15 0.25 M 0.25max. 0.10min. 0.75max. 1.27typ. Hitachi Code JEDEC EIAJ FP-8DA — — 9 HAT2058R/HAT2058RJ Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. 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Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 4.0 10