HAT2116H-EL-E

HAT2116H Silicon N Channel Power MOS FET Power Switching REJ03G1189-0400 (Previous: ADE-208-1575B) Rev.4.00 Sep 07, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 6.3 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 34 4 G 12 1, 2, 3 4 5 Source Gate Drain SSS 123 Rev.4.00 Sep 07, 2005 page 1 of 6 HAT2116H Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 30 120 30 15 150 –55 to +150 Unit V V A A A W °C °C Pch Tch Note 2 Tstg Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 ±20 — — 1.0 — — 27 — — — — — — — — — — — — Typ — — — — — 6.3 10.5 45 1650 400 220 26 5 5 15 55 48 11 0.85 60 Max — — ±10 1 2.5 8.2 15.3 — — — — — — — — — — — 1.11 — Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note 3 ID = 15 A, VGS = 4.5 V ID = 15 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 10 V RL = 0.5 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 50 A/µs Note 3 Note 3 Note 3 Rev.4.00 Sep 07, 2005 page 2 of 6 HAT2116H Main Characteristics Power vs. Temperature Derating 40 500 100 30 10 µs 0µ 1m s PW DC s Op = 1 era 0 m s tio nT c= Operation in 25 °C this area is limited by RDS (on) 10 Maximum Safe Operation Area Pch (W) ID (A) Drain Current Channel Dissipation 10 20 1 10 0.1 Ta = 25°C 1 shot Pulse 0 0 50 100 150 200 0.01 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test (A) (A) ID Drain Current 40 4.5 V 4V 3.5 V 40 ID 30 30 Drain Current 20 VGS = 3 V 20 25°C 10 Tc = 75°C –25°C 10 0 0 2 4 6 8 10 0 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage VDS (on) (V) Pulse Test 0.16 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) 100 Pulse Test 50 0.20 Drain to Source Voltage 0.12 20 VGS = 4.5 V 10 5 10 V 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 16 20 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.4.00 Sep 07, 2005 page 3 of 6 HAT2116H Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance |yfs| (S) 50 Pulse Test 40 100 Tc = –25°C 30 10 3 1 0.3 0.1 0.1 25°C 75°C 30 ID = 2 A, 5 A 10 A VGS = 4.5 V 10 10 V 0 40 2 A, 5 A, 10 A 80 120 160 20 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 0 –40 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 3000 Ciss 1000 300 100 30 10 Coss Crss Body-Drain Diode Reverse Recovery Time 100 Reverse Recovery Time trr (ns) 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.2 0.5 1 2 5 10 20 50 Capacitance C (pF) VGS = 0 f = 1 MHz 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VDS (V) ID = 30 A VGS 16 VDD = 25 V 10 V 5V VGS (V) 50 20 200 100 td(off) 50 tf 20 10 5 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.5 1 2 5 10 20 td(on) tr Drain to Source Voltage 30 VDS 12 20 8 10 VDD = 25 V 10 V 5V 0 20 40 60 80 4 0 0 100 Gate to Source Voltage Switching Time t (ns) 40 2 0.1 0.2 Gate Charge Qg (nc) Drain Current ID (A) Rev.4.00 Sep 07, 2005 page 4 of 6 HAT2116H Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 10 V 40 5V 30 VGS = 0 20 10 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 8.33°C/W, Tc = 25°C PDM p ot uls e 0.05 0.03 0.02 1 0.0 D= PW T PW T 1 sh 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Switching Time Waveform Vin Monitor D.U.T. Rg RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V VDS = 10 V td(on) 90% tr 90% td(off) tf Rev.4.00 Sep 07, 2005 page 5 of 6 HAT2116H Package Dimensions JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Package Name LFPAK MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name Quantity Shipping Container HAT2116H-EL-E 2500 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 6 of 6 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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