HAT2160H

HAT2160H Silicon N Channel Power MOS FET Power Switching REJ03G0002-0300 Rev.3.00 Sep 26, 2005 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 D 5 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123 3 12 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 3 EAR Note 3 Pch Note2 Tch Tstg Ratings 20 ±20 60 240 60 30 90 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Rev.3.00 Sep 26, 2005 page 1 of 7 HAT2160H Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 20 ±20 — — 0.8 — — 78 — — — — — — — — — — — — — Typ — — — — — 2.1 2.8 130 7750 1220 450 0.5 54 19 14 17 60 65 15 0.82 40 Max — — ±10 1 2.3 2.6 4.1 — — — — — — — — — — — — 1.07 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 20 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 30 A, VGS = 10 V Note4 ID = 30 A, VGS = 4.5 V Note4 ID = 30 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 60 A VGS = 10 V, ID = 30 A, VDD ≅ 10 V, RL = 0.33 Ω, Rg = 4.7 Ω IF = 60 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/ dt = 100 A/ µs Rev.3.00 Sep 26, 2005 page 2 of 7 HAT2160H Main Characteristics Power vs. Temperature Derating 40 500 Maximum Safe Operation Area 10 µs 0µ 1m s s Pch (W) 10 ID (A) 100 30 Channel Dissipation 10 20 Drain Current PW DC = 1 Op 0 m era s tio n 1 Operation in this area is limited by RDS(on) Tc = 25°C 1 shot Pulse 0.3 1 3 10 30 100 10 0.1 0.01 0.1 0 50 100 150 200 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 4.5 V Pulse Test 100 3.2 V 3.0 V Typical Transfer Characteristics VDS = 10 V Pulse Test ID (A) 60 ID (A) Drain Current 80 80 60 2.8 V 25°C Tc = 75°C -25°C Drain Current 40 2.6 V VGS = 2.4 V 40 20 20 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 250 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 200 5 150 VGS = 4.5 V 10 V 2 100 ID = 50 A 50 20 A 10 A 1 1 3 10 30 100 300 1000 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Sep 26, 2005 page 3 of 7 HAT2160H Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance |yfs| (S) 5 Pulse Test 50 A 4 3 VGS = 4.5 V 1000 300 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 VDS = 10 V Pulse Test 10 30 100 25°C 75°C Tc = -25°C Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance vs. Drain Current ID = 10 A, 20 A 2 10 V 1 0 -25 10 A, 20 A, 50 A 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 3000 1000 300 100 30 10 100 0 4 8 12 Coss Body-Drain Diode Reverse Recovery Time Reverse Recovery Time trr (ns) 100 50 Capacitance C (pF) Crss 20 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 10 0.1 VGS = 0 f = 1 MHz 16 20 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics VDS (V) ID = 60 A VDD = 5 V 10 V 20 V VGS Switching Characteristics VGS (V) 20 1000 300 100 30 t d(on) 10 tr 3 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 2 5 10 20 50 100 td(off) tf 50 40 16 Drain to Source Voltage 30 VDD = 20 V VDS 10 10 V 5V 12 20 8 4 0 200 0 Gate to Source Voltage Switching Time t (ns) 40 80 120 160 0.1 0.2 0.5 1 Gate Charge Qg (nc) Drain Current ID (A) Rev.3.00 Sep 26, 2005 page 4 of 7 HAT2160H Reverse Drain Current vs. Source to Drain Voltage 100 (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 100 IAP = 30 A VDD = 10 V duty < 0.1 % Rg ≥ 50 Ω Reverse Drain Current IDR (A) 80 Repetitive Avalanche Energy EAR 10 V 5V VGS = 0 80 60 60 40 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 20 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θch - c(t) = γs (t) • θch - c θch - c = 4.17°C/ W, Tc = 25°C PDM t ho pu lse 0.05 0.03 0.02 1 0.0 1s D= PW T PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform 1 2 L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP VDD VDS VDS Monitor L IAP Monitor EAR = Rg D. U. T ID Vin 15 V 50 Ω 0 VDD Rev.3.00 Sep 26, 2005 page 5 of 7 HAT2160H Switching Time Test Circuit Vin Monitor D.U.T. Rg RL VDS = 10 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor Switching Time Waveform 90% Rev.3.00 Sep 26, 2005 page 6 of 7 HAT2160H Package Dimensions JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Package Name LFPAK MASS[Typ.] 0.080g Unit: mm 4.9 5.3 Max 4.0 ± 0.2 5 0.25 –0.03 +0.05 3.3 1.0 3.95 1 4 6.1 –0.3 +0.1 0° – 8° 1.1 Max +0.03 0.07 –0.04 0.75 Max 1.27 0.10 0.40 ± 0.06 0.25 M 0.6 –0.20 1.3 Max +0.25 0.20 –0.03 +0.05 (Ni/Pd/Au plating) Ordering Information Part Name HAT2160H-EL-E Quantity 2500 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 26, 2005 page 7 of 7 4.2 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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