HAT2172N

HAT2172N Silicon N Channel Power MOS FET Power Switching REJ03G1683-0100 Rev.1.00 May 28, 2008 Features • • • • • High speed switching Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) 5678 DDDD 2X XX 8(D) 7(D) 6(D) 5(D) 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 40 ±20 30 120 30 20 20 20 6.25 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 1 of 7 HAT2172N Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 ±20 — — 1.5 — — 27 — — — — — — — — — — — — — Typ — — — — — 6.1 6.9 45 2420 480 150 0.5 32 9 4.0 12 20 38 4.5 0.84 32 Max — — ±10 1 3.0 7.8 9.5 — — — — — — — — — — — — 1.10 — Unit V V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 40 V, VGS = 0 VDS = 10 V, ID = 10mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 7 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V,VGS = 0, f = 1 MHz VDD = 10 V, VGS = 10 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 10 V, RL = 0.67 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 2 of 7 HAT2172N Main Characteristics Power vs. Temperature Derating 40 500 100 1m 10 10 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 PW 10 DC Op =1 c= era tio s 0m s °C 0µ µs s 20 nT 1 Operation in this area is 0.1 limited by RDS(on) Ta = 25°C 1 shot Pulse 0.3 1 3 25 10 0 50 100 150 200 0.01 0.1 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V Pulse Test 4.0 V 4.4 V 3.8 V 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 30 3.6 V 20 3.4 V 10 Drain Current ID (A) 40 40 30 Tc = 75°C 20 10 VGS = 3.0 V 0 2 4 6 8 10 0 2 25°C –25°C 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (mΩ) 200 Pulse Test 150 ID = 20 A 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 50 20 10 5 VGS = 7 V 10 V 10 A 50 5A 2 1 1 0.3 10 3 Pulse Test 100 30 1000 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain Current ID (A) REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 3 of 7 HAT2172N Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Drain to Source On State Resistance RDS(on) (mΩ) 20 100 30 10 3 1 0.3 0.1 0.1 Tc = –25°C 25°C Pulse Test 15 ID = 20 A 10 VGS = 7 V 5 10 V 0 –25 5 A, 10 A, 20 A 5 A, 10 A 75°C VDS = 10 V Pulse Test 0.3 1 3 10 30 100 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time 100 10000 3000 1000 Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Ciss 50 Capacitance C (pF) Coss 300 Crss 100 30 V = 0 GS f = 1 MHz 10 0 5 10 20 di/dt = 100 A/µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 30 100 15 20 25 30 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 Drain to Source Voltage VDS (V) 50 Gate to Source Voltage VGS (V) ID = 30 A 1000 300 100 td(off) 30 td(on) 10 tf 3 1 0.1 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 100 tr VGS 30 VDS VDD = 25 V 10 V 5V 12 20 8 10 VDD = 25 V 10 V 5V 8 16 24 32 4 0 40 0 Gate Charge Qg (nc) Switching Time t (ns) 40 16 Drain Current ID (A) REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 4 of 7 HAT2172N Reverse Drain Current vs. Source to Drain Voltage 50 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 50 IAP = 20 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω Reverse Drain Current IDR (A) 10 V 40 5V VGS = 0, –5 V 40 30 30 20 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 10 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch - c(t) = γs (t) • θch - c θch - c = 6.25°C/ W, Tc = 25°C PDM D= PW T 1m 10 m 100 m 1 10 PW T 0.03 0.02 1 0.0 0.01 10 µ 1s t ho pu lse 100 µ Pulse Width PW (s) REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 5 of 7 HAT2172N Avalanche Test Circuit VDS Monitor L EAR = IAP Monitor Rg Vin 15 V D. U. T VDD V(BR)DSS IAP VDS ID Avalanche Waveform 1 L • IAP2 • 2 VDSS VDSS - VDD 50 Ω 0 VDD Switching Time Test Circuit Vin Monitor Rg D.U.T. RL VDS = 10 V Vin Vout Vin 10 V Vout Monitor Switching Time Waveform 90% 10% 10% 90% td(on) tr 90% td(off) tf 10% REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 6 of 7 HAT2172N Package Dimensions Package Name LFPAK-i JEITA Package Code  RENESAS Code PTSP0008DC-A Previous Code LFPAK-iV MASS[Typ.] 0.080g 4.9 5.3Max 8 5 0.25 – 0.03 + 0.05 3.2 0.60 – 0.30 + 0.25 1 3.3 4 0.20 – 0.03 + 0.05 6.1 – 0.3 3.95 + 0.1 0° – 8° 1.1Max 0.07 – 0.04 + 0.03 0.75Max 1.27 0.10 0.4 ± 0.06 0.25 M ( Ni/Pd/Au plating ) Ordering Information Part No. HAT2172N-EL-E Quantity 2500 pcs Taping Shipping Container REJ03G1683-0100 Rev.1.00 May 28, 2008 Page 7 of 7 1.3Max Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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