HAT2189WP
Silicon N Channel Power MOS FET Power Switching
REJ03G1251-0200 Rev.2.00 Aug 28, 2009
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 8.5 17 8.5 17 8.5 4.8 20 6.25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 1 of 6
HAT2189WP
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 200 — — 3.0 3.5 — — — — — — — — — — — — — Typ — — — — 6.0 0.23 430 86 7 24 24 44 9 10 2.7 3.8 0.9 100 Max — 1 ±0.1 4.5 — 0.27 — — — — — — — — — — 1.4 — Unit V μA μA V S Ω pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 4.3 A, VDS = 10 V Note4 ID = 4.3 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 4.3 A VGS = 10 V RL = 23.3 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 8.5 A IF = 8.5 A, VGS = 0 Note4 IF = 8.5 A, VGS = 0 diF/dt = 100 A/μs
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 2 of 6
HAT2189WP
Main Characteristics
Maximum Safe Operation Area
100 20
Typical Output Characteristics
Ta = 25°C Pulse Test 10 V 9V
10
Drain Current ID (A)
=
Drain Current ID (A)
10
PW
μs
8V 7V
16
10
0
1 Operation in this area is limited by RDS(on)
μs
12
6.5 V
8
0.1
6V
4
0.01 Tc = 25°C 1 shot 0.001 0.1 1
5.5 V VGS = 5 V
10
100
1000
0 0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V) Static Drain to Source on State Resistance vs. Drain Current (Typical)
Drain to Source on State Resistance RDS(on) (Ω)
1 VGS = 10 V Ta = 25°C Pulse Test
Typical Transfer Characteristics
20 VDS = 10 V Pulse Test Tc = −25°C 25°C 75°C
Drain Current ID (A)
16
12
0.1
8
4
0
0.01 1 10 100
0
2
4
6
8
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature (Typical)
1.2 1.0 0.8 0.6 0.4 4.3 A 0.2 0 -25 1 0 VGS = 10 V Pulse Test 1000
Drain Current ID (A)
Static Drain to Source on State Resistance RDS(on) (Ω)
Typical Capacitance vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
ID = 17 A 8.5 A
100 Coss
10 Crss VGS = 0 f = 1 MHz Ta = 25°C 20 40 60 80 100
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 3 of 6
HAT2189WP
Reverse Drain Current vs. Source to Drain Voltage (Typical) Gate to Source Voltage VGS (V)
20
Dynamic Input Characteristics (Typical) Drain to Source Voltage VDS (V)
400 ID = 8.5 A Ta = 2 5 °C 300
Reverse Drain Current IDR (A)
VGS
16
VGS = 0, Ta = 25 °C Pulse Test
VDD = 160 V 100 V 50 V VDS
12
16
12
200
8
8 4 0 0 0.4 0.8 1.2 1.6 2.0
100
VDD = 160 V 100 V 50 V 0 4 8 12 16
4
0
0 20
Gate Charge Qg (nC)
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature (Typical)
5 VDS = 10 V
4 ID = 10 mA 1 mA 0.1 mA 2 1
3
0 -25
0
25
50
75
100 125 150
Case Temperature
Tc (°C)
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 4 of 6
HAT2189WP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
3 Tc = 25°C 1 D=1 0.5 0.3
0.2
γ s (t)
0.1
0.1
0.05
θ ch - c(t) = γs (t) • θ ch - c θ ch - c = 6.25°C/ W, Tc = 25°C
PDM
0.03
0.02 1 0.0
1 sh
D=
PW T
PW T
p ot
e ul s
0.01 10 μ
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor D.U.T. RL 10 Ω Vin 10 V VDD = 100 V Vout Monitor Vin Vout 10% 10%
Waveform
90%
10%
90% td(on)
90% td(off) tf
tr
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 5 of 6
HAT2189WP
Package Dimensions
Package Name WPAK JEITA Package Code − RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 ± 0.15
4.21Typ 1.27Typ
5.1 ± 0.2
0.8Max
3.9 ± 0.2
6.1
5.9
0.04Min
0.7Typ
0.635Max
1.27Typ
0.2Typ
0.5 ± 0.15
3.8 ± 0.2
+0.1 -0.3
+0.1 -0.2
0.4 ± 0.06
0.05Max 0Min Stand-off
4.9 ± 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part No. HAT2189WP-EL-E Quantity 2500 pcs Taping Shipping Container
REJ03G1251-0200 Rev.2.00 Aug 28, 2009 Page 6 of 6
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Colophon .7.2