HAT2217C

HAT2217C Silicon N Channel MOS FET Power Switching REJ03G0449-0300 Rev.3.00 May 19.2005 Features • Low on-resistance RDS(on) = 105 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 4.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) 2345 DDD D Index band 4 5 6 2 3 6 G 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note 2 Ratings 60 +20 / –10 3 12 3 Unit V V A A A W °C °C Channel dissipation Pch 1.25 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm), PW ≤ 5 s Rev.3.00 May 19, 2005 page 1 of 6 HAT2217C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min. 60 +20 –10 — — 1 — — 2.8 — — — — — — — — — — — Typ. — — — — — 105 126 4.3 275 40 16 4.5 0.8 0.7 5 11 35 3 0.85 Max. — — ±10 1 2 132 183 — — — — — — — — — — — 1.25 Unit V V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = 16 / –8 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 1.5 A, VGS = 10 V Note3 ID = 1.5 A, VGS = 4.5 V Note3 ID = 1.5 A, VGS = 10 V Note3 VGS = 0 f = 1 MHz VDS = 10 V VGS = 10 V VDS = 10 V ID = 3 A VGS = 10 V ID = 1.5 A VDD = 10 V RL = 6.6 Ω , Rg = 4.7 Ω IF = 3 A, VGS = 0 Rev.3.00 May 19, 2005 page 2 of 6 HAT2217C Main Characteristics Power vs. Temperature Derating 1.6 Pch (W) 100 30 ID (A) Maximum Safe Operation Area Ta = 25°C,1shot pulse 100 µs When using the FR4 board. 1.2 10 3 1 0.3 0.1 0.03 10 µs Power Dissipation Drain Current 0.8 PW 1 = 10 m s s m 0.4 Operation in this area is limited by RDS(on) 0 50 100 150 Ta (°C) 200 0.01 0.03 0.1 0.3 1 3 10 30 100 VDS (V) Ambient Temperature Drain to Source Voltage Typical Output Characteristics 10 5V 4V 10 V Pulse Test 3.5 V Typical Transfer Characteristics 10 VDS = 10 V Pulse Test ID (A) −25°C 25°C ID (A) 8 8 6 Drain Current 3V Drain Current 6 Tc = 75 °C 4 2.5 V VGS = 2 V 4 2 2 0 2 4 6 Drain to Source Voltage 8 10 VDS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 800 Drain to Source Saturation Voltage VDS(on) (mV) Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 600 -4.5V 400 ID = 3 A 200 1.5 A 0.5 A 0 4 8 12 16 VGS (V) 20 10 0.1 1 Drain Current 10 ID (A) 100 100 VGS = 10 V Gate to Source Voltage Rev.3.00 May 19, 2005 page 3 of 6 HAT2217C Static Drain to Source On State Resistance vs. Temperature 500 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 30 400 Tc = −25°C 10 25°C 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 300 ID = 0.5,1.5 A 3A 200 VGS = 10V 3A 4.5V 0 −25 0 25 50 0.5,1.5 A Pulse Test 75 100 125 150 Tc (°C) Case Temperature 75°C 100 0.3 1 3 10 30 100 Drain Current ID (A) Dynamic Input Characteristics 80 16 10000 Typical Capacitance vs. Drain to Source Voltage VDS (V) VGS (V) ID = 3 A 60 VDD = 10 V 25 V 50 V VDD 40 VGS VDD = 50 V 25 V 10 V 8 12 3000 VGS = 0 f = 1 MHz Capacitance C (pF) 1000 300 100 30 10 3 1 Drain to Source Voltage Gate to Source Voltage Ciss Coss Crss 20 4 0 2 4 Gate Charge 6 8 Qg (nC) 0 10 0 10 20 30 40 50 VDS (V) 60 Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 10 Switching Characteristics 1000 IDR (A) 8 6 10 V tr Switching Time t (ns) Reverse Drain Current 100 td(off) VGS = 0 , -10 V 4 td(on) 10 tf 1 0.01 0.03 2 Pulse Test 0 0.4 0.8 1.2 1.6 VSD (V) 2.0 Source to Drain Voltage 0.1 0.3 1 3 10 Drain Current ID (A) Rev.3.00 May 19, 2005 page 4 of 6 HAT2217C Switching Time Test Circuit Vin Monitor D.U.T. RL 4.7 Ω Vin 10 V VDS = 10 V Vin Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Switching Time Waveform 90% Rev.3.00 May 19, 2005 page 5 of 6 HAT2217C Package Dimensions JEITA Package Code  RENESAS Code PWSF0006JA-A Package Name CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D e A c LP E HE A xM A S A b L Reference Symbol Dimension in Millimeters e A2 A yS A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 c A-A Section 1.65 Ordering Information Part Name HAT2217C-EL-E Quantity 3000 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 19, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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