HAT2279N

HAT2279N Silicon N Channel Power MOS FET Power Switching Preliminary Rev.2.00 Jul.05.2005 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V) • Lead Free Outline LFPAK-i 5678 DDDD 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain SSS 123 Rev.2.00, Jul.05.2005, page 1 of 4 HAT2279N Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 Note 2 Note3 Note1 Ratings 80 ±20 30 120 30 25 83 25 5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C EAR Pch θch-C Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.2.00, Jul.05.2005, page 2 of 4 HAT2279N Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 — — 0.8 — — 42 — — — — — — — — — — — — — Typ — — — — 9.8 11.3 70 3520 410 160 0.5 60 9.5 9.0 9.5 14.5 56 9.5 0.83 50 Max — ± 0.5 1 2.3 12.3 15.3 — — — — — — — — — — — — 1.08 — Unit V µA µA V mΩ mΩ S pF pF pF Ω nc nc nc ns ns ns ns V ns VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD ≅ 30 V RL = 2 Ω Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz Note4 Note4 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF ID = 15 A, VGS = 4.5 V Note4 Body–drain diode reverse recovery trr time Notes: 4. Pulse test IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs Rev.2.00, Jul.05.2005, page 3 of 4 HAT2279N Package Dimensions Unit: mm 1.27 0.15 0. 4 0.25 1.2MAX 1.2MAX 0. 5 0. 5 8 7 6 5 (Laser Mark ) 1 2 3 4 0. 2 0.1MAX 1.1MAX 5.3MAX 1.27 0.15 0. 4 6.2MAX 3.95 2XX X Package Code JEDEC JEITA Mass (reference value) LFPAK-i — — 0.080 g Rev.2.00, Jul.05.2005, page 4 of 4