HAT2281C-EL-E

HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006 Features • Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2345 DD DD 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) Ratings 60 ±12 2 8 2 850 150 –55 to +150 Unit V V A A A mW °C °C Rev.2.00 Jan 26, 2006 page 1 of 6 HAT2281C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leak current Drain to Source leak current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 ±12 — — 0.4 — — 3 — — — — — — — — — — — Typ — — — — 109 126 4.5 335 40 20 12 27 36 5 3.6 0.6 0.7 0.8 Max — ±10 1 1.4 142 177 — — — — — — — — — — — 1.1 Unit V µA µA V mΩ mΩ S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.0 A, VGS = 4.5 VNote3 ID = 1.0 A, VGS = 2.5 VNote3 ID = 1.0 A, VDS = 10 V Note3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1.0 A VGS = 4.5 V, VDD = 10 V RL = 10 Ω, Rg = 4.7 Ω VDD = 10 V, VGS = 4.5 V ID = 2.0 A IF = 2.0 A, VGS = 0 Note3 Rev.2.00 Jan 26, 2006 page 2 of 6 HAT2281C Main Characteristics Power vs. Temperature Derating 1.6 100 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) Maximum Safe Operation Area Ta = 25°C,1shot pulse When using the FR4 board. Pch (W) 30 1.2 Drain Current ID (A) 10 3 1 D 10 µs 0 10 Channel Dissipation µs 0.8 PW C 1 m s = 0.3 0.1 10 m s n tio ra pe O 0.4 Operation in this area 0.03 is limited by RDS(on) 0 50 100 150 200 0.01 0.03 0.1 0.3 1 3 10 30 100 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 2.4 V 2.3 V 2.2 V 2.1 V 2V 1.9 V 1.8 V 1.7 V 4 1.6 V 1.5 V 2 Pulse Test 0 2 4 6 1.4 V VGS = 1.2 V Typical Transfer Characteristics 10 VDS = 10 V Pulse Test Drain Current ID (A) 6 Drain Current ID (A) 8 4.5 V 8 6 4 Tc = –25°C 2 25°C 75°C 0 1 2 3 4 5 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) Drain to Source On State Resistance RDS(on) (mΩ) 400 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 1000 Pulse Test 300 2.5 V 100 VGS = 4.5 V 200 2A 100 1A ID = 0.5 A 0 2 4 6 8 10 10 0.1 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Jan 26, 2006 page 3 of 6 HAT2281C Static Drain to Source on State Resistance vs. Temperature 400 Pulse Test Static Drain to Source on State Resistance RDS(on) (mΩ) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 30 Tc = –25°C 10 3 1 0.3 0.1 0.1 75°C 300 200 ID = 0.5, 1, 2 A 2.5 V 25°C 100 ID = 0.5, 1, 2 A 0 –25 VGS = 4.5 V VDS = 10 V Pulse Test 0.3 1 3 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) Drain Current ID (A) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 2 A 80 VDD = 50 V 25 V 10 V VGS 12 16 Typical Capacitance vs. Drain to Source Voltage Gate to Source Voltage VGS (V) 20 1000 VGS = 0 f = 1 MHz 100 Capacitance C (pF) 300 Ciss 60 VDS 100 40 VDD = 50 V 25 V 10 V 2 4 6 8 10 8 20 4 0 30 Coss Crss 0 10 0 10 20 30 40 50 60 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage 10 1000 Switching Characteristics tr Reverse Drain Current IDR (A) 8 4.5V 6 2.5V Switching Time t (ns) 100 td(off) td(on) 10 tf VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % 0.3 1 3 10 30 100 4 VGS = 0 V 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 1 0.1 Source to Drain Voltage VSD (V) Drain Current ID (A) Rev.2.00 Jan 26, 2006 page 4 of 6 HAT2281C Switching Time Test Circuit Waveform Vin Monitor Rg D.U.T. RL Vout Monitor Vin Vout 10% 10% 90% 10% Vin 10 V VDD = 10 V 90% td(on) tr 90% td(off) tf Rev.2.00 Jan 26, 2006 page 5 of 6 HAT2281C Package Dimensions Package Name CMFPAK-6 JEITA Package Code  RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D e A c LP E HE A xM A SA b L Reference Symbol Dimension in Millimeters e A2 A yS A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas c A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 1.65 Ordering Information Part Name HAT2281C-EL-E Quantity 3000 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Jan 26, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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