HIT667

HIT667 Silicon NPN Epitaxial REJ03G1505-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT647 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings 120 100 6 1.0 2.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT667 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min 120 100 6 — — 140 40 — — Typ — — — — — — — — — Max — — — 500 500 330 — 0.5 1.1 Unit V V V nA nA — — V V Test conditions IC = 100 µA, IE = 0 IC = 10 mA, RBE = ∞ IE = 100 µA, IC = 0 VCB = 120 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 150 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA Rev.2.00 Mar 05, 2007 page 2 of 4 HIT667 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) 1.2 1.0 Typical Output Characteristics 25 mA 20 mA 15 mA 10 mA Collector Current IC (A) 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 0.8 0.6 40 mA 35 mA 30 mA P 5 mA 2 mA = 0.9 W 0.4 C 0.2 1 mA IB = 0.5 mA 0 0 2 4 6 8 10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 500 300 VCE = 5 V Pulse DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE Ta = 75°C 25°C -25°C 150 100 50 0 VCE = 5 V Pulse 1 10 100 1000 Collector Current IC (mA) 200 100 50 20 10 5 250 200 Ta = 75°C 25°C -25°C 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 1.0 VCE = 10 IB Pulse 0.8 VBE(sat) -25°C 25°C Ta = 75°C 0.20 0.16 0.6 Ta = 75°C 25°C -25°C 0.12 0.4 0.08 0.2 VCE(sat) 0 1 10 100 0.04 0 1000 Collector Current IC (mA) Rev.2.00 Mar 05, 2007 page 3 of 4 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter & Collector to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE(sat) (V) HIT667 Package Dimensions JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Package Name TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max 2.3 Max 0.7 10.1 Min 8.0 ± 0.5 0.5 Max 1.27 2.54 Ordering Information Part Name Quantity Shipping Container HIT667-EQ 2500 pcs Bulk, Vinyl Bag HIT667TZ-EQ 2500 pcs Hold Box, Radial Taping Note: This product is designed for consumer use and not for automotive. Rev.2.00 Mar 05, 2007 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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