HRU0103A

HRU0103A

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HRU0103A - Silicon Schottky Barrier Diode for Rectifying - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
HRU0103A 数据手册
HRU0103A Silicon Schottky Barrier Diode for Rectifying REJ03G0149-0200Z (Previous: ADE-208-450A) Rev.2.00 Nov.26.2003 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRU0103A Laser Mark S1 Package Code URP Pin Arrangement Cathode mark Mark 1 S1 2 1. Cathode 2. Anode Rev.2.00, Nov.26.2003, page 1 of 5 HRU0103A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRRM * IO * Tj Tstg 1 2 1 Value 30 100 3 125 –55 to +125 Unit V mA A °C °C IFSM * Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Thermal resistance Note: Symbol VF IR Rth(j-a) Min — — — Typ — — 600 Max 0.44 50 — Unit V µA °C/W Test Condition IF = 100 mA VR = 30 V Polyimide board * 1 1. Polyimide board 20h×15w×0.8t 1.5 0.8 3.0 1.5 Unit: mm Rev.2.00, Nov.26.2003, page 2 of 5 HRU0103A Main Characteristics 1.0 Pulse test 10–1 10–3 10–2 Pulse test 10–2 Ta = 25°C Reverse current IR (A) Forward current IF (A) Ta = 75°C 10–4 Ta = 75°C 10–3 10–5 Ta = 25°C 10 –4 10 –5 10–6 10–6 0 0.2 0.4 0.6 0.8 1.0 10–7 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 0.10 0.06 0V 0A D=5/6 t D=— T D=2/3 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) t T t D=— T D=1/6 sin(θ=180°) D=1/3 D=1/2 DC 0.08 0.05 T Tj = 125°C t Tj = 25°C 0.04 0.06 0.03 D=1/2 0.04 0.02 sin(θ=180°) 0.02 0.01 0 0 0.02 0.04 0.06 0.08 0.10 0.12 0 0 10 20 30 40 Forward current IF (A) Fig3. Forward power dissipation vs. Forward current Reverse voltage VR (V) Fig4. Reverse power dissipation vs. Reverse voltage Rev.2.00, Nov.26.2003, page 3 of 5 HRU0103A 0.12 Average rectified current IO (A) 0.10 VR=VRRM/2 Tj =125°C Rth(j−a)=600°C/W DC 0.08 D=1/2 sin(θ=180°) 0.06 D=1/3 D=1/6 0.04 0.02 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature Rev.2.00, Nov.26.2003, page 4 of 5 HRU0103A Package Dimensions As of January, 2003 Unit: mm 0.3 ± 0.15 0.9 ± 0.15 1.7 ± 0.15 2.5 ± 0.15 0 – 0.10 1.25 ± 0.15 Package Code JEDEC JEITA Mass (reference value) URP Conforms — 0.004 g Rev.2.00, Nov.26.2003, page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 1.0
HRU0103A
PDF文档中的物料型号是ATMEGA16U2-AU。

这是一个基于AVR增强型ATmega16U2单片机,具有8KB的内部FLASH存储器和512字节的EEPROM。

器件简介显示ATMEGA16U2-AU主要应用于USB 2.0全速设备,如键盘、鼠标、游戏杆、USB集线器等。


引脚分配如下: 1. VDD:电源电压输入 2. GND:接地 3. D+:USB正差分数据线 4. D-:USB负差分数据线 5. ID:USB识别引脚 6. GP0-GP7:通用I/O引脚 7. RXD:串行数据输入 8. TXD:串行数据输出 9. XTAL1:晶体振荡器输入 10. XTAL2:晶体振荡器输出

参数特性包括: 1. 工作电压:4.5V-5.5V 2. 工作频率:16MHz 3. I/O口数量:8个 4. 内部FLASH大小:8KB 5. 内部SRAM大小:512字节 6. 封装类型:TQFP44

功能详解中提到ATMEGA16U2-AU支持USB 2.0全速设备,具有多个通用I/O口和足够的内部存储空间,适合开发各种USB接口设备。


应用信息指出ATMEGA16U2-AU因其高速数据处理能力和丰富的I/O口,常用于键盘、鼠标、游戏杆和USB集线器等USB设备。


封装信息显示ATMEGA16U2-AU采用44引脚的薄型四方扁平封装(TQFP),适用于表面贴装技术(SMT)。
HRU0103A 价格&库存

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