HRU0103C

HRU0103C

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HRU0103C - Silicon Schottky Barrier Diode for Rectifying - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
HRU0103C 数据手册
HRU0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0071-0100Z Rev.1.00 Aug.29.2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HRU0103C Laser Mark S8 Package Code URP Pin Arrangement Cathode mark Mark 1 S8 2 1. Cathode 2. Anode Rev.1.00, Aug.29.2003, page 1 of 5 HRU0103C Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average rectified current Peak forward surge current Non-Repetitive peak forward surge current Junction temperature Storage temperature Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Symbol VRM * VR IO * 1 1 Value 30 30 100 300 1 125 –55 to +125 Unit V V mA mA A °C °C IFM IFSM *2 Tj Tstg Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current IR1 IR2 Capacitance Thermal resistance Note: C Rth(j-a) Min — — — — — — Typ — — — — — 600 Max 0.4 0.6 0.1 0.2 8.0 — pF °C/W µA Unit V Test Condition IF = 10 mA IF = 100 mA VR = 5 V VR = 10 V VR = 0.5 V, f = 1 MHz Polyimide board * 1 1. Polyimide board 20h×15w×0.8t 1.5 3.0 0.8 1.5 Unit: mm Rev.1.00, Aug.29.2003, page 2 of 5 HRU0103C Main Characteristics 1.0 Pulse test 10–1 Ta = 75°C 10–3 Pulse test 10–4 Reverse current IR (A) Ta = 75°C Forward current IF (A) 10–2 10 –5 10–3 Ta = 25°C Ta = 50°C 10–6 Ta = 25°C 10 –4 10–5 10–7 10–6 0 0.2 0.4 0.6 0.8 1.0 10–8 0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 0.12 0.030 0V Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 0.10 0A Reverse power dissipation Pd (W) Forward power dissipation Pd (W) t T t D=— T D=1/6 sin(θ=180°) D=1/3 D=1/2 DC 0.025 T Tj = 125°C t t D=— T D=5/6 0.08 Tj = 25°C 0.020 D=2/3 0.06 0.015 D=1/2 0.04 0.010 sin(θ=180°) 0.02 0.005 0 0 0.05 0.10 0.15 0 0 10 20 30 40 Forward current IF (A) Fig3. Forward power dissipation vs. Forward current Reverse voltage VR (V) Fig4. Reverse power dissipation vs. Reverse voltage Rev.1.00, Aug.29.2003, page 3 of 5 HRU0103C 120 Average rectified current IO (mA) 100 VR=VRRM/2 Tj =125°C Rth(j−a)=600°C/W DC 80 D=1/2 sin(θ=180°) 60 D=1/3 D=1/6 40 20 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature Rev.1.00, Aug.29.2003, page 4 of 5 HRU0103C Package Dimensions As of January, 2003 Unit: mm 0.3 ± 0.15 0.9 ± 0.15 1.7 ± 0.15 2.5 ± 0.15 0 – 0.10 1.25 ± 0.15 Package Code JEDEC JEITA Mass (reference value) URP Conforms — 0.004 g Rev.1.00, Aug.29.2003, page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. http://www.renesas.com © 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 0.0
HRU0103C
1. 物料型号:HRU0103C,激光标记为S8,封装代码为URP。

2. 器件简介:HRU0103C是一款肖特基势垒整流二极管,具有低反向电压降,适合高效率的反向电流整流。它的超小型树脂封装(URP)适合于表面贴装设计。

3. 引脚分配:器件有两个引脚,1为阴极(Cathode),2为阳极(Anode)。

4. 参数特性: - 最大额定值:包括30V的峰值反向电压和反向电压,100mA的平均整流电流,300mA的峰值正向浪涌电流,以及1A的非重复峰值正向浪涌电流,结温为125°C,存储温度范围为-55至+125°C。 - 电气特性:在25°C下,正向电压在10mA时为0.4V,在100mA时为0.6V;在5V反向电压下反向电流为0.1A,在10V反向电压下为0.2A;电容为8.0pF(在0.5V电压和1MHz频率下);热阻(结到环境)在聚酰亚胺板上为600°C/W。

5. 功能详解:HRU0103C主要用于整流应用,其肖特基势垒结构提供了较低的正向电压降,这有助于提高电源转换效率。同时,它的小尺寸封装适合于节省空间的电路设计。

6. 应用信息:虽然文档中没有明确提到具体应用,但基于其特性,HRU0103C适用于需要高效率整流和低正向电压降的场合,如电源管理、电机控制和信号处理等。

7. 封装信息:该器件采用URP封装,符合JEDEC标准。参考质量为0.004g。
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