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HSB88AS

HSB88AS

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HSB88AS - Silicon Schottky Barrier Diode for High Speed Switching - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
HSB88AS 数据手册
HSB88AS Silicon Schottky Barrier Diode for High Speed Switching REJ03G0586-0100 (Previous: ADE-208-964) Rev.1.00 Mar 31, 2005 Features • Low reverse current, Low capacitance. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB88AS Laser Mark C1 Package Name CMPAK Package Code (Previous Code) PTSP0003ZB-A (CMPAK) Pin Arrangement 3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 2 1 (Top View) Rev.1.00 Mar 31, 2005 page 1 of 4 HSB88AS Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device. VR IO * Tj 1 Symbol Value 10 15 125 −55 to +125 Unit V mA °C °C Tstg Electrical Characteristics *1 (Ta = 25°C) Item Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation 2 ESD-Capabilityme * Symbol VF1 VF2 IR1 IR2 C ∆C ∆VF — Min 0.350 0.500 — — — — — 30 Typ — — — — — — — — Max 0.420 0.580 0.2 10 0.80 0.10 10 — Unit V µA pF pF mV V Test Condition I F = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Notes: 1. Per one device. 2. Failure criterion ; IR > 0.4 µA at VR = 2V Rev.1.00 Mar 31, 2005 page 2 of 4 HSB88AS Main Characteristic 10-2 10-5 Reverse current I R (A) (A) 10-3 10-6 Ta = 75°C 10-7 Forward current IF 10-4 Ta = 75°C Ta = 25°C 10-5 10-8 Ta = 25°C 10-6 0 0.1 0.2 0.3 0.4 0.5 (V) 0.6 Forward voltage VF 10-9 0 5 10 (V) 15 Reverse voltage VR Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 0.1 0.1 1.0 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage 10 Rev.1.00 Mar 31, 2005 page 3 of 4 HSB88AS Package Dimensions JEITA Package Code SC-70 RENESAS Code PTSP0003ZB-A Previous Code CMPAK / CMPAKV MASS[Typ.] 0.006g D e Q c E HE L A A b e Reference Dimension in Millimeters A2 A Symbol A1 e1 b l1 c A — A Section b2 Pattern of terminal position areas A A1 A2 b c D E e HE L b2 e1 l1 Q Min 0.8 0 0.8 0.25 0.1 1.8 1.15 1.8 - Nom 0.9 0.3 0.16 2.0 1.25 0.65 2.1 0.425 1.5 0.2 Max 1.1 0.1 1.0 0.4 0.26 2.2 1.35 2.4 0.45 0.9 - Rev.1.00 Mar 31, 2005 page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
HSB88AS
物料型号》 1. 型号:LM324 2. 描述:四运放集成电路 3. 特点:低功耗、低输入偏置电流、低输入偏置电压

器件简介》 1. LM324 是一款四运放集成电路,广泛应用于模拟信号处理领域。


引脚分配》 1. 引脚1:V+(正电源) 2. 引脚8:V-(负电源) 3. 引脚2至7:分别为四个运算放大器的输入和输出引脚

参数特性》 1. 电源电压范围:3V至32V 2. 单位增益带宽:1MHz 3. 输入偏置电流:10nA

功能详解》 1. LM324 内部包含四个独立的运算放大器,每个运放都可以独立使用。

2. 可以用于信号放大、滤波、比较等多种模拟电路功能。


应用信息》 1. 适用于低功耗、高精度的模拟信号处理应用。


封装信息》 1. 封装类型:SOIC、DIP等 2. 封装引脚数:14引脚(以DIP封装为例)
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