HSC276

HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE-208-421A) Rev.2.00 Nov.10.2003 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability Note: *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — — Max — 50 — 0.85 — Unit V µA mA pF V Test Condition IR = 1 m A VR = 0.5 V VF = 0.5 V VR = 0.5 V, f = 1 MHz C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10–1 10–2 Reverse current IR (A) Forward current IF (A) 10–2 10–3 10–3 Ta = 75˚C 10–4 Ta = 75˚C 10–4 Ta = 25˚C 10–5 Ta = 25˚C 10–5 0 0.2 0.4 0.6 0.8 Forward voltage VF (V) 1.0 10–6 0 1.0 2.0 3.0 4.0 Reverse voltage VR (V) 5.0 Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 Capacitance C (pF) 1.0 0.1 0.1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance vs. Reverse voltage Rev.2.00, Nov.10.2003, page 3 of 4 HSC276 Package Dimensions As of January, 2003 Unit: mm 1.2 ± 0.10 1.6 ± 0.10 0.13 ± 0.05 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Package Code JEDEC JEITA Mass (reference value) UFP — Conforms 0.0016 g Rev.2.00, Nov.10.2003, page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. 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