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HSC277

HSC277

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HSC277 - Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
HSC277 数据手册
HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch REJ03G0585-0200 (Previous: ADE-208-413A) Rev.2.00 Mar 29, 2005 Features • Low forward resistance. (rf = 0.7 Ω max) • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC277 Cathode Mark Laser Package Name UFP Package Code (Previous Code) PWSF0002ZA-A (UFP) Pin Arrangement Cathode mark 1 2 1. Cathode 2. Anode Rev.2.00 Mar 29, 2005 page 1 of 4 HSC277 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature VR Pd Tj Tstg Topr Symbol Value 35 150 125 −45 to +125 −20 to +60 Unit V mW °C °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Forward voltage Reverse current Capacitance Forward resistance Symbol VR VF IR C rf Min 35.0 — — — — Typ — — — — — Max — 1.0 50 1.2 0.7 Unit V V nA pF Ω Test Condition IR = 10 µA IF = 10 mA VR = 25 V VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Rev.2.00 Mar29, 2005 page 2 of 4 HSC277 Main Characteristic 10-2 10-3 Reverse current IR (A) Forward current IF (A) 10-6 10-7 10-8 10-9 10-10 10-11 10-12 10-13 0 10-4 10-5 10-6 10-7 10-8 10-9 0 0.2 0.4 0.6 0.8 1.0 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage 10 f=1MHz 2.5 f=100MHz 2.0 Forward resistance rf (Ω) Capacitance C (pF) 1.5 1.0 1.0 0.5 0.1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance vs. Reverse voltage 40 0 10-4 10-3 Forward current IF (A) 10 -2 Fig.4 Forward resistance vs. Forward current Rev.2.00 Mar29, 2005 page 3 of 4 HSC277 Package Dimensions JEITA Package Code SC-79 RENESAS Code PWSF0002ZA-A Previous Code UFP / UFPV MASS[Typ.] 0.0016g D b E HE c l1 e1 A l1 b2 Reference Symbol Dimension in Millimeters Pattern of terminal position areas A b c D E HE b2 e1 l1 Min 0.50 0.25 0.08 0.70 1.10 1.50 Nom 0.60 0.30 0.80 1.20 1.60 0.80 1.70 0.60 Max 0.70 0.35 0.18 0.90 1.30 1.70 Rev.2.00 Mar29, 2005 page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
HSC277
1. 物料型号: - 型号:HSC277 - 旧型号:ADE-208-413A

2. 器件简介: - HSC277是一款用于UHF/VHF调谐器波段开关的硅外延平面二极管,具有低正向电阻和超小型平面引脚封装(UFP),适合表面贴装设计。

3. 引脚分配: - 引脚1:阴极(Cathode) - 引脚2:阳极(Anode)

4. 参数特性: - 反向电压(VR):35V - 功率耗散(Pd):150mW - 结温(Tj):125°C - 存储温度(Tstg):-45至+125°C - 工作温度(Topr):-20至+60°C

5. 功能详解: - 电气特性包括反向电压、正向电压、反向电流和电容等参数,其中正向电阻(rf)最大为0.7Ω。

6. 应用信息: - 该二极管适用于UHF/VHF调谐器的波段开关,具体应用需考虑安全设计,如使用非易燃材料、预防任何故障或事故。

7. 封装信息: - 封装名称:UFP - 封装代码(旧代码):PWSF0002ZA-A(UFP) - 封装重量:0.0016g - 封装尺寸参数详细列出了最小值、标称值和最大值。
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