HSC88

HSC88

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    HSC88 - Silicon Schottky Barrier Diode for Various Detector, Mixer - Renesas Technology Corp

  • 详情介绍
  • 数据手册
  • 价格&库存
HSC88 数据手册
HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer REJ03G0624-0100 (Previous: ADE-208-826) Rev.1.00 Apr 12, 2005 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC88 Cathode Mark S3 Package Name UFP Package Code (Previous Code) PWSF0002ZA-A (UFP) Pin Arrangement Cathode mark Mark 1 S3 2 1. Cathode 2. Anode Rev.1.00 Apr 12, 2005 page 1 of 4 HSC88 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature VR IO Tj Tstg Symbol Value 10 15 125 −55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance ESD-Capability *1 Note: Symbol VF1 VF2 IR1 IR2 C — Min 0.350 0.500 — — — 30 Typ — — — — — — Max 0.420 0.580 0.2 10 0.80 — Unit V µA pF Ω Test Condition I F = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz C = 200 pF, Both forward and reverse direction 1 pulse. 1. Failure criterion ; IR ≥ 0.4µA at VR =2 V Rev.1.00 Apr 12, 2005 page 2 of 4 HSC88 Main Characteristic 10-2 10-6 Ta= 75°C (A) 10-3 Reverse current IR (A) 10-7 Ta= 50°C Forward current IF 10-4 Ta= 75°C 10-8 Ta= 25°C 10-5 Ta= 50°C Ta= 25°C Ta= 0°C Ta= - 25°C Ta= 0°C 10-9 Ta= - 25°C 10-6 0 0.2 0.4 0.6 0.8 10-10 0 2 4 6 8 10 Forward voltage VR (V) Fig.1 Forward current vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage f=1MHz 10 (pF) Capacitance C 1.0 0.1 0.1 1.0 Reverse voltage VR (V) 10 Fig.3 Capacitance vs. Reverse voltage Rev.1.00 Apr 12, 2005 page 3 of 4 HSC88 Package Dimensions JEITA Package Code SC-79 RENESAS Code PWSF0002ZA-A Previous Code UFP / UFPV MASS[Typ.] 0.0016g D b E HE c l1 e1 A l1 b2 Reference Symbol Dimension in Millimeters Pattern of terminal position areas A b c D E HE b2 e1 l1 Min 0.50 0.25 0.08 0.70 1.10 1.50 Nom 0.60 0.30 0.80 1.20 1.60 0.80 1.70 0.60 Max 0.70 0.35 0.18 0.90 1.30 1.70 Rev.1.00 Apr 12, 2005 page 4 of 4 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0
HSC88
物料型号: - 型号:HSC88

器件简介: - HSC88是一款硅肖特基势垒二极管,适用于各种探测器和混频器。

引脚分配: - 引脚1:阴极(Cathode) - 引脚2:阳极(Anode)

参数特性: - 绝对最大额定值: - 反向电压(VR):10V - 平均整流电流(Io):15mA - 结温(Tj):125°C - 存储温度(Tstg):-55至+125°C - 电气特性(Ta=25°C): - 正向电压(VF1):0.350至0.420V(IF=1mA) - 正向电压(VF2):0.500至0.580V(IF=10mA) - 反向电流(IR1):0.2A(VR=2V) - 反向电流(IR2):10μA(VR=10V) - 电容(C):0.8pF(VR=0V, f=1MHz) - ESD能力:30V(C=200pF,正反向单脉冲)

功能详解: - HSC88具有低电容(最大0.8pF)和低正向电压,适合表面贴装设计。

应用信息: - 适用于各种探测器和混频器。

封装信息: - 封装名称:Ultra small Flat Lead Package (UFP) - 封装代码:PWSF0002ZA-A (UFP) - 封装重量:0.0016g - 封装尺寸(单位:毫米): - A:0.50(最小)至0.70(最大) - B:0.25(最小)至0.35(最大) - C:0.08(最小)至0.18(最大) - D:0.70(标称)至0.90(最大) - E:1.10(最小)至1.30(最大) - HE:1.50(最小)至1.70(最大) - b2:0.80(标称) - e1:1.70(最大) - l1:0.60(标称)
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