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HZ12BP-E

HZ12BP-E

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    DO-204AL

  • 描述:

    DIODE ZENER 12V 1W DO41

  • 数据手册
  • 价格&库存
HZ12BP-E 数据手册
HZ-P Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter REJ03G0236-0600Z (Previous: ADE-208-123E) Rev.6.00 Apr 13, 2004 Features • Wide spectrum from 1.88 V through 40 V of zener voltage provide flexible application. • Glass package DO-41 structure ensures high reliability. Ordering Information Type No. Mark Package Code HZ-P Series Type No. DO-41 Pin Arrangement 1 2.0 B 2 Type No. Cathode band 1. Cathode 2. Anode Rev.6.00, Apr 13, 2004, page 1 of 7 HZ-P Series Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Junction temperature Storage temperature Pd 1.0 W Tj Tstg 175 −55 to +175 °C °C Electrical Characteristics (Ta = 25°C) Zener Voltage VZ (V)* Reverse Current Test Condition 1 IR (µA) Test Condition Dynamic Resistance rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) HZ2.0 BP 1.88 2.12 40 200 0.5 25 40 CP 2.00 2.24 HZ2.2 BP CP 2.08 2.20 2.33 2.45 40 200 0.7 20 40 HZ2.4 BP CP 2.28 2.40 2.56 2.70 40 200 1.0 15 40 HZ2.7 BP CP 2.5 2.7 2.9 3.1 40 200 1.0 15 40 HZ3.0 BP CP 2.8 3.0 3.2 3.4 40 100 1.0 15 40 HZ3.3 BP CP 3.1 3.3 3.5 3.7 40 80 1.0 15 40 HZ3.6 BP CP 3.4 3.6 3.8 4.0 40 60 1.0 15 40 HZ3.9 BP CP 3.7 3.9 4.1 4.4 40 40 1.0 15 40 HZ4.3 BP CP 4.0 4.3 4.5 4.8 40 20 1.0 15 40 HZ4.7 BP CP 4.4 4.7 4.9 5.2 40 20 1.0 10 40 Note: 1. Tested with DC. Rev.6.00, Apr 13, 2004, page 2 of 7 HZ-P Series Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage VZ (V)* Reverse Current Dynamic Resistance Test Condition IR (µA) Test Condition rd (Ω) Test Condition Max IZ (mA) Max VR (V) Max IZ (mA) 40 20 1.0 8 40 1 Type Grade HZ5.1 BP 4.8 5.4 CP 5.1 5.7 HZ5.6 BP CP 5.3 5.6 6.0 6.3 40 20 1.5 8 40 HZ6.2 BP CP 5.8 6.2 6.6 7.0 40 20 3.0 6 40 HZ6.8 BP CP 6.4 6.8 7.2 7.7 40 20 3.5 6 40 HZ7.5 BP CP 7.0 7.5 7.9 8.4 40 20 4.0 4 40 HZ8.2 BP CP 7.7 8.2 8.7 9.3 40 20 5.0 4 40 HZ9.1 BP CP 8.5 9.1 9.6 10.2 40 20 6.0 6 40 HZ10 BP CP 9.4 10.0 10.6 11.2 40 10 7.0 6 40 HZ11 BP CP 10.4 11.0 11.6 12.3 20 10 8.0 8 20 HZ12 BP CP 11.4 12.0 12.6 13.5 20 10 9.0 8 20 HZ13 BP CP 12.4 13.3 14.1 15.0 20 10 10.0 10 20 HZ15 BP CP 13.8 14.7 15.6 16.5 20 10 11.0 10 20 HZ16 BP CP 15.3 16.2 17.1 18.3 20 10 12.0 12 20 HZ18 BP CP 16.8 18.0 19.1 20.3 20 10 13.0 12 20 HZ20 BP CP 18.8 20.0 21.2 22.4 20 10 15.0 14 20 Note: Min 1. Tested with DC. Rev.6.00, Apr 13, 2004, page 3 of 7 HZ-P Series Electrical Characteristics (cont) (Ta = 25°C) Zener Voltage VZ (V)* Reverse Current Dynamic Resistance Test Condition IR (µA) Test Condition rd (Ω) Test Condition Max IZ (mA) Max VR (V) Max IZ (mA) 10 10 17.0 14 10 1 Type Grade HZ22 BP 20.8 23.3 CP 22.0 24.5 HZ24 BP CP 22.8 24.0 25.6 27.6 10 10 19.0 16 10 HZ27 BP CP 25.1 27.0 28.9 30.8 10 10 21.0 16 10 HZ30 BP CP 28.0 30.0 32.0 34.0 10 10 23.0 18 10 HZ33 BP CP 31.0 33.0 35.0 37.0 10 10 25.0 18 10 HZ36 BP CP 34.0 36.0 38.0 40.0 10 10 27.0 20 10 Min Notes: 1. Tested with DC. 2. Type No. is as follows; HZ2.0BP, HZ2.0CP, • • • HZ36BP, HZ36CP. Rev.6.00, Apr 13, 2004, page 4 of 7 HZ-P Series Zener current IZ (A) HZ36BP 10–3 HZ18BP HZ5.1BP 10–2 HZ24BP 10–1 HZ3.0BP HZ2.7BP Main Characteristic 10–4 10–5 10–6 10–7 10–8 0 5 10 15 20 25 30 Zener voltage VZ (V) 35 40 45 50 0.08 40 %/°C 0.06 30 0.04 20 mV/°C 0.02 10 0 0 –0.02 –10 –0.04 –20 –0.06 –30 –0.08 –40 –0.10 –50 5 10 15 20 25 30 35 40 Zener voltage VZ (V) 0 1.0 Fig.2 Temperature Coefficient vs. Zener Voltage Rev.6.00, Apr 13, 2004, page 5 of 7 0.8 Power dissipation Pd (W) 0.10 Zener voltage temperature coefficient γZ (mV/°C) Zener voltage temperature coefficient γZ (%/°C) Fig.1 Zener Current vs. Zener Voltage 0.6 l=10mm l=10mm 0.4 without heat sink Plate l l=20mm l 0.2 0 Infinite Heat Sink Plate 0 50 100 150 Ambient temperature Ta (°C) 200 Fig.3 Power Dissipation vs. Ambient Temperature Nonrepetitive surge reverses power PRSM (W) HZ-P Series 104 PRSM t 10 3 Ta = 25°C nonrepetitive 102 HZ3.0BP 10 HZ18BP HZ36BP 1.0 10–5 10–4 10–3 Time t (s) 10–2 10–1 1.0 Transient thermal impedance Zth (°C/W) Fig.4 Surge Reverse Power Ratings (Reference Data) 103 HZ36BP HZ2.7BP HZ18BP 102 10mm 10 10mm Infinite Heat Sink Plate 1.0 –3 10 10 –2 10 –1 1.0 Time t (s) 10 Fig.5 Transient Thermal Impedance Rev.6.00, Apr 13, 2004, page 6 of 7 102 103 HZ-P Series Package Dimensions As of January, 2003 Unit: mm 5.2 Max 26.0 Min φ 0.8 φ 3.0 26.0 Min Package Code JEDEC JEITA Mass (reference value) Rev.6.00, Apr 13, 2004, page 7 of 7 DO-41 Conforms Conforms 0.38 g Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .1.0
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