IDT3CP0C02-18.432NSGE

CMOS Oscillator 3C02 PRELIMINARY DATA SHEET General Description Features Using the IDT CMOS oscillator technology, originally developed by Mobius Microsytems, the 3C02 replaces quartz crystal based resonators and oscillators with a monolithic CMOS IC at the thinnest possible form factors without the use of any mechanical frequency source or PLL. The product is specially designed to work with the next generation USB 3.0 Super Speed, PCIe® Gen1/2 and S-ATA interface controller ICs and systems. • • • • All-CMOS Temperature Compensated Oscillator Excellent Frequency Accuracy: +/- 100ppm total Ultra-low power operation (2mA typical at 1.8V supply) No quartz or PLL used: very low jitter performance leading to low link Bit Error Rates (BER) • Excellent reliability: Shock and vibration resistant • Many frequencies are supported • Factory programmable from 6 to 133MHz Ordering Information Pin Assignment 3C P 0 C 02 - FFF NSG X 8 1 4 2 3 5 6 7 8 9 1) IDT Base Part Number for 100ppm CMOS Oscillator 2) Supply Voltage Configuration • P: 1.8V to 3.3V continuous operation 3) Output Signal Type • 0: LVCMOS Output 4) “C” indicates integrated CMOS Oscillator 5) “XX” is product specific code that indicated product sequence 6) FFF: Factory Programmed Frequency in MHz 7) Package Options* • NSG: 5x3.2, 4-Pin Package • NVG: 2.5x2.0, 4-Pin Package2 • M: SOIC, 8-pin Package2 Table 1. Pin Descriptions 8) Temperature Grade • “E” -20 to 70oC Extended Commercial Temperature Range • “ “ 0 to 70oC Commercial Temperature Range,ie. default is blank2 • “R” -20 to 85oC Restricted Industrial Temperature Range 9) Tape & Reel Option • “ “: Shipped in Tube i.e. default is blank • 8: Shipped in Tape & Reel No Name Type Description 1 CE Input Pullup Chip Enable. Internal Pullup. 3C02 is enabled when HIGH. When LOW, OUT has a weak pull-down to GND internally 2 VSS Power System Ground 3 OUT Output Frequency Output 4 VDD Power Power Supply. Use a 0.1µF decoupling capacitor between VDD and VSS 2 1 :This product is rated “Green”, please contact factory for environmental compliancy information 2 : Future product. Not available for design-in. Please contact your IDT representative for details The Preliminary Information presented herein represents a product in pre-production. The noted characteristics are based on initial product characterization and/or qualification. Integrated Device Technology, Incorporated (IDT) reserves the right to change any circuitry or specifications without notice 3C02 REVISION B DATE, 10/20/2010 1 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR Table 2. Pin Descriptions Below Pin Descriptions apply to SOIC-8 Package No Name Type Description 1 CE Input Pullup Chip Enable. Internal Pullup. 3C02 is enabled when HIGH.When LOW, OUT has a weak pull-down to GND internally 4 VSS Power System Ground 6 OUT Output Frequency Output 8 VDD Power Power Supply. Use a 0.1µF decoupling capacitor between VDD and VSS 2,3,5,7 NC No Connect Pins. These pins may be left floating. Block Diagram Functional Description 3C02 is a monolithic all-CMOS frequency source. The internal CMOS Oscillator generates the factory-programmed frequencies with high accuracy and excellent phase noise and jitter. The device is a silicon alternative to quartz based crystal resonators and oscillators. Various programming and configuration options are supported as given in the Part Ordering Information section above. The easy-to-use device offers programmable frequencies and various supply voltage configurations. Offered in common crystal oscillator pin-outs, the 3C02 allows the designer to disable the oscillator via the CE pin to enter a very low current, quiescent state. The CMOS oscillator features very fast start-up time to enable rapid wake-up from the quiescent state. All required circuit elements other than those that are noted in the Pin Descriptions Table (Table.1) above are internal to the device. 3C02 REVISION B DATE, 10/20/2010 2 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Input, VI (CE pin) -0.5V to VDD + 0.5V Output, VO (OUT pin) -0.5V to VDD + 0.5V Storage Temperature -65oC to 150oC Electrical Characteristics5 [3.3V] VDD=3.0V to 3.6V, TA=-20 to 70oC unless otherwise noted. Typical values are measured at VDD=3.3V, TA=35oC Parameter Symbol Conditions ESD Human Body Model, tested per JESD D22-A114 ElectroStaticDischa rge Supply Voltage Input LOW level Input HIGH level Supply Current Quiescent Current Output LOW level Output HIGH level Output Frequency VDD VIL VIH IDD IDDQ VOL VOH FOUT Frequency Stability FTOT Rise Time Fall Time RT FT Duty Cycle DC Power-up time ton Period Jitter PJRMS Cycle-cycle Jitter CJ Phase Noise PN Min 3 Normal Operation CE pin CE pin Active supply current, VDD=3.3V, T=35oC, no output load CE=LOW, output disabled IOL = -4mA IOH = 4mA Factory Programmable.Contact IDT for frequencies not listed Total Frequency Stability over temperature,supply variation,aging (1st year at 35oC),shock&vibration. “E” device option, over -20 to 70oC range 20% to 80% x VDD. Output load (CL) =8pF, NSG-option 80% to 20% x VDD. Output load (CL) =8pF, NSG-option Clock output duty cycle. Measured under 80MHz, VDD/2, CL=8pF Clock output duty cycle. Measured over 80MHz, VDD/2, CL=8pF Output valid time after VDD meets the specified range&CE transition Total RMS Period Jitter (including random and deterministic)1,2 The absolute value of max change in the periods of any 2 adjacent cycles1,2,4 1MHz offset from carrier1,2 Typ Max 4000 3.0 -0.3 VDD*0.7 Units V 3.3 3.6 VDD*0.3 VDD+0.3 3.0 1 0.5 V V V mA µA V V MHz +100 ppm 1.9 1.9 ns ns 45 55 % 40 60 % 400 µs 2.5 0.2 VDD-0.5 12,48,75,125 50 100 3.5 -140 psRMS 50 ps -135 dBc/Hz Notes 1. Measured with a 50Ω to GND termination 2: Measured at 48MHz output frequency 3. The 3C02 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V. 4. Measured over 1000 cycles per JEDEC standard 65 5. Electrical parameters are guaranteed by design and characterization over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. 3C02 REVISION B DATE, 10/20/2010 3 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR 5 Electrical Characteristics [2.5V] VDD=2.25V to 2.75V, TA=-20 to 70oC unless otherwise noted. Typical values are measured at VDD=2.5V, TA=35oC Parameter Symbol Conditions Min ESD Human Body Model, tested per JESD D22-A114 4000 VDD VIL VIH IDD IDDQ VOL VOH FOUT Normal Operation3 CE pin CE pin Active supply current, VDD=2.5V, T=35oC, no output load CE=LOW, output disabled IOL = -3mA IOH = 3mA Factory Programmable.Contact IDT for frequencies not listed Total Frequency Stability over temperature,supply variation,aging (1st year at 35oC),shock&vibration. “E” device option, over -20 to 70oC range 20% to 80% x VDD. Output load (CL) =7pF, NSG-option 80% to 20% x VDD. Output load (CL) =7pF, NSG-option Clock output duty cycle. Measured under 100MHz at VDD/2, CL=7pF Clock output duty cycle. Measured over 100MHz at VDD/2, CL=7pF Output valid time after VDD meets the specified range&CE transition Total RMS Period Jitter (including random and deterministic)1,2 The absolute value of max change in the periods of any 2 adjacent cycles1,2,4 1MHz offset from carrier1,2 2.25 -0.3 VDD*0.7 ElectroStaticDischa rge Supply Voltage Input LOW level Input HIGH level Supply Current Quiescent Current Output LOW level Output HIGH level Output Frequency Frequency Stability FTOT Rise Time Fall Time RT FT Duty Cycle DC Power-up time ton Period Jitter PJRMS Cycle-cycle Jitter CJ Phase Noise PN Typ Max Units V 2.5 2.75 VDD*0.3 VDD+0.3 2.75 1 0.4 V V V mA µA V V MHz +100 ppm 2.3 2.3 ns ns 45 55 % 40 60 % 400 µs 2.25 0.2 VDD-0.4 12,48,75,125 50 100 3.5 -140 psRMS 50 ps -135 dBc/Hz Notes 1. Measured with a 50Ω to GND termination 2: Measured at 48MHz output frequency 3. The 3C02 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V. 4. Measured over 1000 cycles per JEDEC standard 65 5. Electrical parameters are guaranteed by design and characterization over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. 3C02 REVISION B DATE, 10/20/2010 4 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR 5 Electrical Characteristics [1.8V] VDD=1.62V to 1.98V, TA=-20 to 70oC unless otherwise noted. Typical values are measured at VDD=1.8V, TA=35oC Parameter Symbol Conditions Min ESD Human Body Model, tested per JESD D22-A114 4000 VDD VIL V IH IDD IDDQ VOL VOH FOUT Normal Operation3 CE pin CE pin Active supply current, VDD=1.8V, T=35oC, no output load CE=LOW, output disabled IOL = -1.8mA IOH = 1.8mA Factory Programmable.Contact IDT for frequencies not listed Total Frequency Stability over temperature,supply variation,aging (1st year at 35oC),shock&vibration. “E” device option, over -20 to 70oC range 20% to 80% x VDD. Output load (CL) =4pF, NSG-option 80% to 20% x VDD. Output load (CL) =4pF, NSG-option Clock output duty cycle. Measured at VDD/2, CL=4pF Output valid time after VDD meets the specified range&CE transition Total RMS Period Jitter (including random and deterministic)1,2 The absolute value of max change in the periods of any 2 adjacent cycles1,2,4 1MHz offset from carrier1,2 1.62 -0.3 VDD*0.7 ElectroStaticDischa rge Supply Voltage Input LOW level Input HIGH level Supply Current Quiescent Current Output LOW level Output HIGH level Output Frequency Frequency Stability FTOT Rise Time Fall Time Duty Cycle RT FT DC Power-up time ton Period Jitter PJRMS Cycle-cycle Jitter CJ Phase Noise PN Typ Max V 1.8 2.0 0.2 1.98 VDD*0.3 VDD+0.3 2.5 1 0.3 V V V mA µA V V MHz +100 ppm 2.75 2.75 55 ns ns % 400 µs VDD-0.3 12,48,75,125 45 50 Units 100 3.5 -140 psRMS 50 ps -135 dBc/Hz Notes 1. Measured with a 50Ω to GND termination 2: Measured at 48MHz output frequency 3. The 3C02 will support continuous VDD operation from 1.62 to 3.6V. The device can be powered up with a supply voltage at any of the 3 main supply rails of 1.8V, 2.5V or 3.3V. 4. Measured over 1000 cycles per JEDEC standard 65 5. Electrical parameters are guaranteed by design and characterization over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. Application Diagram Below is a representative application diagram to evaluate the 3C02. For 50Ohm terminated measurements, a balun is necessary to provide proper impedance matching 3C02 REVISION B DATE, 10/20/2010 5 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR Package Outline and Package Dimensions Package Outline for NSG -5.0x3.2x0.9mm, 4-pin package: Below is the recommended PCB land pattern for the 3C02 NSG package: 3C02 REVISION B DATE, 10/20/2010 6 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet CMOS OSCILLATOR Package Outline and Package Dimensions Package Outline for NVG -2.5x2.0x0.55mm, 4-pin package: Package Outline for SOIC, 8-pin package: 3C02 REVISION B DATE, 10/20/2010 7 ©2010 Integrated Device Technology, Inc. 3C02 Preliminary Data Sheet 6024 Silver Creek Valley Road San Jose, California 95138 CMOS OSCILLATOR Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com Technical Support mobius@idt.com +408-739-5400 DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright 2010. All rights reserved.