ISL2100AABZ-T

DATASHEET ISL2100A, ISL2101A FN6294 Rev 4.1 Jul 22, 2021 100V, 2A Peak, High Frequency Half-Bridge Drivers The ISL2100A, ISL2101A are 100V, high frequency, half-bridge N-channel power MOSFET driver ICs. They are based on the popular HIP2100, HIP2101 half-bridge drivers, but offer several performance improvements. The ISL2100A has additional input hysteresis for superior operation in noisy environments and the inputs of the ISL2101A, like those of the ISL2100A, can now safely swing to the VDD supply rail. Finally, both parts are available in a very compact 9 Ld DFN package to minimize the required PCB footprint Features Applications • On-Chip 1Ω Bootstrap Diode • Telecom Half-Bridge Converters • Fast Propagation Times for Multi-MHz Circuits • Telecom Full-Bridge Converters • Drives 1nF Load with Typical Rise/Fall Times of 10ns • Two-Switch Forward Converters • CMOS Compatible Input Thresholds (ISL2100A) • Active-Clamp Forward Converters • 3.3V/TTL Compatible Input Thresholds (ISL2101A) • Class-D Audio Amplifiers • Independent Inputs Provide Flexibility • Drives N-Channel MOSFET Half-Bridge • Space-Saving DFN Package • DFN Package Compliant with 100V Conductor Spacing Guidelines per IPC-2221 • Pb-Free (RoHS compliant) • Bootstrap Supply Max Voltage to 114VDC • No Start-Up Problems • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground or HS Slewing at High dv/dt • Low Power Consumption • Wide Supply Voltage Range (9V to 14V) • Supply Undervoltage Protection • 2.5Ω Typical Output Pull-Up/Pull-Down Resistance Application Block Diagram +12V +100V VDD HB DRIVE HI PWM CONTROLLER LI CONTROL HI HO HS DRIVE LO ISL2100A ISL2101A VSS FN6294 Rev 4.1 Jul 22, 2021 SECONDARY CIRCUIT LO REFERENCE AND ISOLATION Page 1 of 11 © 2008 Renesas Electronics ISL2100A, ISL2101A Functional Block Diagram HB VDD UNDER VOLTAGE HO LEVEL SHIFT DRIVER HS HI ISL2101A ISL2101A UNDER VOLTAGE LO DRIVER LI VSS EPAD (DFN PACKAGE ONLY) *EPAD = EXPOSED PAD. THE EPAD IS ELECTRICALLY ISOLATED FROM ALL OTHER PINS. FOR BEST THERMAL PERFORMANCE CONNECT THE EPAD TO THE PCB POWER GROUND PLANE. +48V +12V PWM ISL2100A ISL2101A SECONDARY CIRCUIT ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V SECONDARY CIRCUIT +12V PWM ISL2100A ISL2101A ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP FN6294 Rev 4.1 Jul 22, 2021 Page 2 of 11 ISL2100A, ISL2101A Ordering Information PART NUMBER (Note) ISL2100AAR3Z PART MARKING PACKAGE DESCRIPTION (RoHS Compliant) PKG. DWG. # CARRIER TYPE (Note 1) TEMP. RANGE 9 Ld 3x3 DFN L9.3x3 Tube -40 to +125°C 00AZ ISL2100AAR3Z-T ISL2101AAR3Z Reel, 6k 01AZ Tube ISL2101AAR3Z-T ISL2101AABZ Reel, 6k 01ABZ 8 Ld SOIC M8.15 ISL2101AABZ-T Tube Reel, 2.5k NOTES: 1. See TB347 for details on reel specifications. 2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 3. For Moisture Sensitivity Level (MSL), see the ISL2100A and ISL2101A device pages. For more information about MSL, see TB363. Pinouts (9 LD DFN) TOP VIEW VDD 1 9 LO 8 VSS HB 2 EPAD HO 3 HS 4 7 LI 6 HI 5 NC (8 LD SOIC) TOP VIEW VDD 1 HB HO HS 8 LO 2 7 VSS 3 6 LI 4 5 HI NOTE: EPAD = Exposed PAD. Pin Descriptions SYMBOL DESCRIPTION VDD Positive supply to lower gate driver. Bypass this pin to VSS. HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-side output. Connect to gate of high-side power MOSFET. HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-side input. LI Low-side input. VSS Chip negative supply, which will generally be ground. LO Low-side output. Connect to gate of low-side power MOSFET. EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. FN6294 Rev 4.1 Jul 22, 2021 Page 3 of 11 ISL2100A, ISL2101A Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB - VHS (Notes 4, 5) . . . . . . . -0.3V to 18V LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on LO (Note 5) . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V Voltage on HO (Note 5) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA Thermal Resistance (Typical) JA (°C/W) JC (°C/W) 47 3.5 DFN (Notes 6, 7) . . . . . . . . . . . . . . . . . SOIC (Notes 8, 9). . . . . . . . . . . . . . . . . 107 50 Max Power Dissipation at +25°C in Free Air (DFN, Note 6) . . . 2.27W Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493 Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V Voltage on HB . . VHS + 8V to VHS + 14V and VDD - 1V to VDD + 100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .