DATASHEET
ISL2100A, ISL2101A
FN6294
Rev 4.1
Jul 22, 2021
100V, 2A Peak, High Frequency Half-Bridge Drivers
The ISL2100A, ISL2101A are 100V, high frequency,
half-bridge N-channel power MOSFET driver ICs. They are
based on the popular HIP2100, HIP2101 half-bridge drivers,
but offer several performance improvements. The ISL2100A
has additional input hysteresis for superior operation in noisy
environments and the inputs of the ISL2101A, like those of
the ISL2100A, can now safely swing to the VDD supply rail.
Finally, both parts are available in a very compact 9 Ld DFN
package to minimize the required PCB footprint
Features
Applications
• On-Chip 1Ω Bootstrap Diode
• Telecom Half-Bridge Converters
• Fast Propagation Times for Multi-MHz Circuits
• Telecom Full-Bridge Converters
• Drives 1nF Load with Typical Rise/Fall Times of 10ns
• Two-Switch Forward Converters
• CMOS Compatible Input Thresholds (ISL2100A)
• Active-Clamp Forward Converters
• 3.3V/TTL Compatible Input Thresholds (ISL2101A)
• Class-D Audio Amplifiers
• Independent Inputs Provide Flexibility
• Drives N-Channel MOSFET Half-Bridge
• Space-Saving DFN Package
• DFN Package Compliant with 100V Conductor Spacing
Guidelines per IPC-2221
• Pb-Free (RoHS compliant)
• Bootstrap Supply Max Voltage to 114VDC
• No Start-Up Problems
• Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground or HS Slewing at High dv/dt
• Low Power Consumption
• Wide Supply Voltage Range (9V to 14V)
• Supply Undervoltage Protection
• 2.5Ω Typical Output Pull-Up/Pull-Down Resistance
Application Block Diagram
+12V
+100V
VDD
HB
DRIVE
HI
PWM
CONTROLLER
LI
CONTROL
HI
HO
HS
DRIVE
LO
ISL2100A
ISL2101A
VSS
FN6294 Rev 4.1
Jul 22, 2021
SECONDARY
CIRCUIT
LO
REFERENCE
AND
ISOLATION
Page 1 of 11
© 2008 Renesas Electronics
ISL2100A, ISL2101A
Functional Block Diagram
HB
VDD
UNDER
VOLTAGE
HO
LEVEL SHIFT
DRIVER
HS
HI
ISL2101A
ISL2101A
UNDER
VOLTAGE
LO
DRIVER
LI
VSS
EPAD (DFN PACKAGE ONLY)
*EPAD = EXPOSED PAD. THE EPAD IS ELECTRICALLY ISOLATED FROM ALL OTHER
PINS. FOR BEST THERMAL PERFORMANCE CONNECT THE EPAD TO THE PCB
POWER GROUND PLANE.
+48V
+12V
PWM
ISL2100A
ISL2101A
SECONDARY
CIRCUIT
ISOLATION
FIGURE 1. TWO-SWITCH FORWARD CONVERTER
+48V
SECONDARY
CIRCUIT
+12V
PWM
ISL2100A
ISL2101A
ISOLATION
FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP
FN6294 Rev 4.1
Jul 22, 2021
Page 2 of 11
ISL2100A, ISL2101A
Ordering Information
PART NUMBER (Note)
ISL2100AAR3Z
PART
MARKING
PACKAGE DESCRIPTION
(RoHS Compliant)
PKG.
DWG. #
CARRIER TYPE
(Note 1)
TEMP. RANGE
9 Ld 3x3 DFN
L9.3x3
Tube
-40 to +125°C
00AZ
ISL2100AAR3Z-T
ISL2101AAR3Z
Reel, 6k
01AZ
Tube
ISL2101AAR3Z-T
ISL2101AABZ
Reel, 6k
01ABZ
8 Ld SOIC
M8.15
ISL2101AABZ-T
Tube
Reel, 2.5k
NOTES:
1. See TB347 for details on reel specifications.
2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin
plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free
products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), see the ISL2100A and ISL2101A device pages. For more information about MSL, see TB363.
Pinouts
(9 LD DFN)
TOP VIEW
VDD 1
9 LO
8 VSS
HB 2
EPAD
HO 3
HS 4
7 LI
6 HI
5 NC
(8 LD SOIC)
TOP VIEW
VDD
1
HB
HO
HS
8
LO
2
7
VSS
3
6
LI
4
5
HI
NOTE: EPAD = Exposed PAD.
Pin Descriptions
SYMBOL
DESCRIPTION
VDD
Positive supply to lower gate driver. Bypass this pin to VSS.
HB
High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
HO
High-side output. Connect to gate of high-side power MOSFET.
HS
High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this
pin.
HI
High-side input.
LI
Low-side input.
VSS
Chip negative supply, which will generally be ground.
LO
Low-side output. Connect to gate of low-side power MOSFET.
EPAD
Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
FN6294 Rev 4.1
Jul 22, 2021
Page 3 of 11
ISL2100A, ISL2101A
Absolute Maximum Ratings
Thermal Information
Supply Voltage, VDD, VHB - VHS (Notes 4, 5) . . . . . . . -0.3V to 18V
LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on LO (Note 5) . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on HO (Note 5) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V
Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118V
Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
47
3.5
DFN (Notes 6, 7) . . . . . . . . . . . . . . . . .
SOIC (Notes 8, 9). . . . . . . . . . . . . . . . .
107
50
Max Power Dissipation at +25°C in Free Air (DFN, Note 6) . . . 2.27W
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Maximum Recommended Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . . (Repetitive Transient) -5V to 105V
Voltage on HB . . VHS + 8V to VHS + 14V and VDD - 1V to VDD + 100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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