ISL6605CBZ

厂商：
RENESAS(瑞萨)
封装：
SOIC8_150MIL
描述：
IC GATE DRVR HALF-BRIDGE 8SOIC

数据手册：

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详情介绍
数据手册
价格&库存

ISL6605CBZ 数据手册

DATASHEET FOR NEW DESIGNS, INTERSIL RECOMMENDS DROP-IN ENHANCED PRODUCT - ISL6609 ISL6605 FN9091 Rev 7.00 May 9, 2006 Synchronous Rectified MOSFET Driver The ISL6605 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronousrectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. Features The IC is biased by a single low voltage supply (5V) and minimizes low driver switching losses for high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3000pF load with an 8ns propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. • Three-State PWM Input for Power Stage Shutdown The ISL6605 features 4A typical sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shootthrough power loss caused by the high dv/dt of the Phase node. The ISL6605 also features a Three-State PWM input that, working together with Intersil multi-phase PWM controllers, will prevent a negative transient on the output voltage when the output is being shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed-output-voltage damage. • Adaptive Shoot-Through Protection • 0.4 On-Resistance and 4A Sink Current Capability • Supports High Switching Frequency - Fast Output Rise and Fall Time - Ultra Low Propagation Delay 8ns • Internal Bootstrap Schottky Diode • Low Bias Supply Current (5V, 30µA) • Enable Input • QFN Package - Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline. - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile. • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • Core Voltage Supplies for Intel® and AMD® Microprocessors • High Frequency Low Profile DC/DC Converters • High Current Low Voltage DC/DC Converters • Synchronous Rectification for Isolated Power Supplies Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” UGATE 1 8 PHASE BOOT 2 7 EN PWM 3 6 VCC GND 4 5 LGATE PHASE ISL6605 (8 LD QFN) TOP VIEW ISL6605 (8 LD SOIC) TOP VIEW UGATE Pinouts • Drives Two N-Channel MOSFETs 8 7 BOOT 1 66 EN PWM 2 FN9091 Rev 7.00 May 9, 2006 3 4 GND LGATE 5 VCC Page 1 of 10 ISL6605 Ordering Information Ordering Information PART NUMBER* PART MARKING TEMP. RANGE (°C) PACKAGE PART NUMBER* PKG. DWG. # ISL6605CB ISL6605CB 0 to 70 8 Ld SOIC M8.15 ISL6605CBZ (Note) ISL6605CBZ 0 to 70 8 Ld SOIC (Pb-free) M8.15 ISL6605CBZA (Note) ISL6605CBZ 0 to 70 8 Ld SOIC (Pb-free) M8.15 ISL6605CR 605C 0 to 70 8 Ld 3x3 QFN L8.3x3 ISL6605CRZ (Note) 05CZ 0 to 70 8 Ld 3x3 QFN L8.3x3 (Pb-free) ISL6605CRZA (Note) 05CZ 0 to 70 8 Ld 3x3 QFN L8.3x3 (Pb-free) ISL6605IB ISL6605IB -40 to 85 8 Ld SOIC M8.15 ISL6605IBZ (Note) 6605IBZ -40 to 85 8 Ld SOIC (Pb-free) M8.15 PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # ISL6605IBZA (Note) 6605IBZ -40 to 85 8 Ld SOIC (Pb-free) M8.15 ISL6605IR 605I -40 to 85 8 Ld 3x3 QFN L8.3x3 ISL6605IRZ (Note) 05IZ -40 to 85 8 Ld 3x3 QFN L8.3x3 (Pb-free) ISL6605IRZA (Note) 05IZ -40 to 85 8 Ld 3x3 QFN L8.3x3 (Pb-free) ISL6558EVAL2 Evaluation Platform (ISL6558IR+ISL6605IR) *Add “-T” suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. ti Block Diagram ISL6605 VCC BOOT EN UGATE VCC 20K PWM CONTROL LOGIC 20K PHASE SHOOTTHROUGH PROTECTION VCC LGATE GND FN9091 Rev 7.00 May 9, 2006 Page 2 of 10 ISL6605 Typical Application - Multi-Phase Converter Using ISL6605 Gate Drivers VIN +5V +5V +5V COMP VCC VSEN PWM1 PWM2 PGOOD +VCORE BOOT VCC FB UGATE EN PWM ISL6605 499K* PHASE LGATE PWM CONTROL (HIP63XX or ISL65XX) ISEN1 VID (OPTIONAL) ISEN2 VCC FS/EN GND VIN +5V BOOT UGATE EN PWM 499K* PHASE ISL6605 LGATE * 499K IS USED TO PULL DOWN THE PWM INPUT TO PREVENT THE PWM FROM FALSE TRIGGERING UGATE DURING STARTUP. FN9091 Rev 7.00 May 9, 2006 Page 3 of 10 ISL6605 Absolute Maximum Ratings Recommended Operating Conditions Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V BOOT Voltage (VBOOT). . . . . . . -0.3V to 22V (DC) or 33V (

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ISL6605CBZ

物料型号：ISL6605 器件简介：ISL6605是一款高频同步整流MOSFET驱动器，适用于驱动两个N沟道功率MOSFET，用于同步整流降压转换器拓扑结构。

该驱动器与Intersil的HIP63xx或ISL65xx多相位降压PWM控制器配合使用，形成完整的单级核心电压调节解决方案，具有高效率性能和高开关频率。

引脚分配：UGATE(1)、BOOT(2)、PWM(3)、GND(4)、LGATE(5)、VCC(6)、EN(7)、PHASE(8)。

参数特性：支持高开关频率、快速输出上升和下降时间、超低传播延迟8纳秒、三态PWM输入、内部自举肖特基二极管、低偏置供电电流(5V, 30µA)、使能输入、QFN封装。

功能详解：IC通过单个低电压供电(5V)，最小化低驱动开关损耗，适用于高MOSFET栅极电容和高开关频率应用。

每个驱动器能够驱动3000pF负载，传播延迟为8纳秒，转换时间少于10纳秒。

集成自适应直通保护，防止两个MOSFET同时导通。

ISL6605具有4A典型下沉电流，能够在相位节点上升沿期间保持较低的MOSFET栅极，防止由相位节点的高dv/dt引起的直通损耗。

应用信息：适用于Intel®和AMD®微处理器的核心电压供电、高频低剖面DC/DC转换器、高电流低电压DC/DC转换器、隔离电源供应的同步整流。

封装信息：8 LD SOIC和8 LD 3x3 QFN封装，符合JEDEC标准。