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ISL6609AIBZ

ISL6609AIBZ

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC8_150MIL

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

  • 数据手册
  • 价格&库存
ISL6609AIBZ 数据手册
DATASHEET ISL6609, ISL6609A FN9221 Rev 2.00 April 27, 2009 Synchronous Rectified MOSFET Driver The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609A’s bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node. Features • Drives Two N-Channel MOSFETs • Adaptive Shoot-Through Protection • 0.4 On-Resistance and 4A Sink Current Capability • Supports High Switching Frequency - Fast Output Rise and Fall - Ultra Low Three-State Hold-Off Time (20ns) • ISL6605 Replacement with Enhanced Performance • BOOT Capacitor Overcharge Prevention (ISL6609A) • Low VF Internal Bootstrap Diode • Low Bias Supply Current • Enable Input and Power-On Reset • QFN Package - Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile • Pb-Free (RoHS Compliant) Applications • Core Voltage Supplies for Intel® and AMD® Microprocessors • High Frequency Low Profile High Efficiency DC/DC Converters • High Current Low Voltage DC/DC Converters • Synchronous Rectification for Isolated Power Supplies Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” FN9221 Rev 2.00 April 27, 2009 Page 1 of 12 ISL6609, ISL6609A Ordering Information PART NUMBER (Note) PART MARKING TEMP. RANGE (°C) PACKAGE (Pb-Free) PKG. DWG. # ISL6609CBZ ISL66 09CBZ 0 to +70 8 Ld SOIC M8.15 ISL6609CBZ-T* ISL66 09CBZ 0 to +70 8 Ld SOIC M8.15 ISL6609CRZ 609Z 0 to +70 8 Ld 3x3 QFN L8.3x3 ISL6609CRZ-T* 609Z 0 to +70 8 Ld 3x3 QFN L8.3x3 ISL6609IBZ ISL66 09IBZ -40 to +85 8 Ld SOIC M8.15 ISL6609IBZ-T* ISL66 09IBZ -40 to +85 8 Ld SOIC M8.15 ISL6609IRZ 09IZ -40 to +85 8 Ld 3x3 QFN L8.3x3 ISL6609IRZ-T* 09IZ -40 to +85 8 Ld 3x3 QFN L8.3x3 ISL6609ACBZ 6609 ACBZ 0 to +70 8 Ld SOIC M8.15 ISL6609ACBZ-T* 6609 ACBZ 0 to +70 8 Ld SOIC M8.15 ISL6609ACRZ 09AZ 0 to +70 8 Ld 3x3 QFN L8.3x3 ISL6609ACRZ-T* 09AZ 0 to +70 8 Ld 3x3 QFN L8.3x3 ISL6609AIBZ 6609 AIBZ -40 to +85 8 Ld SOIC M8.15 ISL6609AIBZ-T* 6609 AIBZ -40 to +85 8 Ld SOIC M8.15 ISL6609AIRZ 9AIZ -40 to +85 8 Ld 3x3 QFN L8.3x3 ISL6609AIRZ-T* 9AIZ -40 to +85 8 Ld 3x3 QFN L8.3x3 ISL6609AIRZ-TK* 9AIZ -40 to +85 8 Ld 3x3 QFN L8.3x3 *Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Pinouts 1 8 PHASE BOOT 2 7 EN PWM 3 6 VCC GND 4 5 LGATE PHASE UGATE UGATE ISL6609, ISL6609A (8 LD QFN) TOP VIEW ISL6609, ISL6609A (8 LD SOIC) TOP VIEW 8 7 66 EN BOOT 1 PWM 2 FN9221 Rev 2.00 April 27, 2009 3 4 GND LGATE 5 VCC Page 2 of 12 ISL6609, ISL6609A Block Diagram ISL6609 and ISL6609A RBOOT VCC BOOT EN UGATE VCC PWM PHASE SHOOTTHROUGH PROTECTION 4.25k CONTROL LOGIC VCC 4k LGATE GND INTEGRATED 3 RESISTOR (RBOOT) AVAILABLE ONLY IN ISL6609A FN9221 Rev 2.00 April 27, 2009 Page 3 of 12 ISL6609, ISL6609A Typical Application - Multiphase Converter Using ISL6609 Gate Drivers VIN +5V +5V +5V FB COMP EN VCC VSEN PWM1 RUGPH UGATE PWM ISL6609 PWM2 PGOOD BOOT VCC PHASE LGATE PWM CONTROL (ISL63XX or ISL65XX) ISEN1 VID (OPTIONAL) GND VIN BOOT VCC FS/EN +VCORE +5V ISEN2 EN UGATE RUGPH PWM ISL6609 PHASE LGATE RUGPH IS REQUIRED FOR SPECIAL POWER SEQUENCING APPLICATIONS (SEE APPLICATION INFORMATION SECTION ON PAGE 8) FN9221 Rev 2.00 April 27, 2009 Page 4 of 12 ISL6609, ISL6609A Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V Input Voltage (VEN, VPWM) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V BOOT Voltage (VBOOT-GND). . . -0.3V to 27V (DC) or 36V (
ISL6609AIBZ 价格&库存

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