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ISL6613BIR-T

ISL6613BIR-T

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VFDFN10

  • 描述:

    IC GATE DRVR HALF-BRIDGE 10DFN

  • 详情介绍
  • 数据手册
  • 价格&库存
ISL6613BIR-T 数据手册
ISL6612B, ISL6613B NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PARTS ISL6622A, ISL6622B DATASHEET FN9205 Rev.4.00 May 1, 2012 Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP The ISL6612B and ISL6613B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range of 5V to 12V. This drivevoltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. These drivers are optimized for POL DC/DC Converters for IBA Systems. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up. These drivers also feature a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events. Features • Pin-to-pin Compatible with HIP6601 SOIC family • Dual MOSFET Drives for Synchronous Rectified Bridge • Low VCC Rising Threshold (7V) for IBA Applications. • Advanced Adaptive Zero Shoot-Through Protection - Body Diode Detection - Auto-zero of rDS(ON) Conduction Offset Effect • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency • 36V Internal Bootstrap Schottky Diode • Bootstrap Capacitor Overcharging Prevention • Supports High Switching Frequency (up to 2MHz) - 3A Sinking Current Capability - Fast Rise/Fall Times and Low Propagation Delays • Three-State PWM Input for Output Stage Shutdown • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement • Pre-POR Overvoltage Protection • VCC Undervoltage Protection • Expandable Bottom Copper Pad for Enhanced Heat Sinking • Dual Flat No-Lead (DFN) Package - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile • Pb-Free (RoHS Compliant) Applications • Optimized for POL DC/DC Converters for IBA Systems • Core Regulators for Intel® and AMD® Microprocessors • High Current DC/DC Converters • High Frequency and High Efficiency VRM and VRD Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Technical Brief TB417 for Power Train Design, Layout Guidelines, and Feedback Compensation Design FN9205 Rev.4.00 May 1, 2012 Page 1 of 12 ISL6612B, ISL6613B Ordering Information PART NUMBER (Notes 1, 2, 3) PART MARKING TEMP. RANGE (°C) PACKAGE (Pb-free) PKG. DWG. # ISL6612BCBZ 6612 BCBZ 0 to +85 8 Ld SOIC M8.15 ISL6612BCRZ 12BZ 0 to +85 10 Ld 3x3 DFN L10.3x3 ISL6612BECBZ 6612 BECBZ 0 to +85 8 Ld EPSOIC M8.15B ISL6612BEIBZ 6612 BEIBZ -40°C to +85°C 8 Ld EPSOIC M8.15B ISL6612BIBZ 6612 BIBZ -40°C to +85°C 8 Ld SOIC M8.15 ISL6612BIRZ 2BIZ -40°C to +85°C 10 Ld 3x3 DFN L10.3x3 ISL6613BCBZ 6613 BCBZ 0 to +85 8 Ld SOIC M8.15 ISL6613BCRZ 13BZ 0 to +85 10 Ld 3x3 DFN L10.3x3 ISL6613BECBZ 6613 BECBZ 0 to +85 8 Ld EPSOIC M8.15B ISL6613BEIBZ 6613 BEIBZ -40°C to +85°C 8 Ld EPSOIC M8.15B ISL6613BIBZ 6613 BIBZ -40°C to +85°C 8 Ld SOIC M8.15 ISL6613BIRZ 3BIZ -40°C to +85°C 10 Ld 3x3 DFN L10.3x3 NOTES: 1. Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. 2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD020. 3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6612B, ISL6613B. For more information on MSL, please see Technical Brief TB363. Pinouts ISL6612BCB, ISL6613BCB, ISL6612BECB, ISL6613BECB (8 LD SOIC, EPSOIC) TOP VIEW UGATE 1 BOOT 2 PWM GND FN9205 Rev.4.00 May 1, 2012 8 PHASE 7 PVCC 3 6 VCC 4 5 LGATE GND ISL6612BCR, ISL6613BCR (10 LD 3x3 DFN) TOP VIEW 1 UGATE BOOT 2 N/C 3 PWM 4 GND 5 10 PHASE 9 PVCC GND 8 N/C 7 VCC 6 LGATE Page 2 of 12 ISL6612B, ISL6613B Block Diagram ISL6612B AND ISL6613B UVCC BOOT VCC UGATE PRE-POR OVP FEATURES +5V 10K POR/ PWM SHOOTTHROUGH PROTECTION PHASE (LVCC) PVCC CONTROL 8K LOGIC UVCC = VCC FOR ISL6612B UVCC = PVCC FOR ISL6613B LGATE GND PAD FN9205 Rev.4.00 May 1, 2012 FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. Page 3 of 12 ISL6612B, ISL6613B Typical Application - 3 Channel Converter Using ISL65xx and ISL6612B Gate Drivers +7V to +12V +5V TO 12V VCC BOOT UGATE PVCC PWM ISL6612B PHASE LGATE GND +7V to +12V +5V TO 12V +5V VCC VFB VCC UGATE PVCC PWM1 VSEN PWM2 PGOOD PWM +VCORE BOOT COMP ISL6612B PHASE PWM3 LGATE MAIN CONTROL ISL65xx VID GND ISEN1 ISEN2 FS ISEN3 +7V to +12V +5V TO 12V GND VCC BOOT UGATE PVCC PWM ISL6612B PHASE LGATE GND FN9205 Rev.4.00 May 1, 2012 Page 4 of 12 ISL6612B, ISL6613B Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V VPHASE - 3.5V (
ISL6613BIR-T
物料型号: - ISL6612B 和 ISL6613B 是专为同步整流降压MOSFET驱动器设计的高频MOSFET驱动器。

器件简介: - 这些驱动器与HIP63xx或ISL65xx多相降压PWM控制器和N沟道MOSFET结合,形成用于先进微处理器的完整核心电压调节解决方案。

引脚分配: - ISL6612B和ISL6613B的引脚分配包括上栅驱动输出(UGATE)、自举供电引脚(BOOT)、PWM输入(PWM)、地(GND)、下栅驱动输出(LGATE)、电源(VCC)和预电源(PVCC)等。

参数特性: - 包括低VCC上升阈值(7V)、先进的自适应零射击保护、可调节的栅极电压(5V至12V)、内部自举肖特基二极管、自举电容过充保护、支持高开关频率(高达2MHz)等。

功能详解: - 这些驱动器集成了先进的自适应零射击保护,以防止上下MOSFET同时导通,并最小化死区时间。它们还具备预VCC OVP保护功能,以在VCC超过其开启阈值之前操作,提供对微处理器的一定保护。

应用信息: - 这些驱动器优化用于IBA系统的POL DC/DC转换器、Intel®和AMD®微处理器的核心调节器、高电流DC/DC转换器、高频率和高效率的VRM和VRD。
ISL6613BIR-T 价格&库存

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