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ISL6614ACBZA

ISL6614ACBZA

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC14

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
ISL6614ACBZA 数据手册
DATASHEET ISL6614A FN9160 Rev.4.00 May 5, 2008 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP The ISL6614A integrates two ISL6613A MOSFET drivers and is specifically designed to drive two Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core voltage regulator solutions for advanced microprocessors. The ISL6614A drives both the upper and lower gates simultaneously over a range from 5V to 12V. This drive voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The ISL6614A also features a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events. Features • Pin-to-pin Compatible with HIP6602 SOIC Family • Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges • Advanced Adaptive Zero Shoot-Through Protection - Body Diode Detection - Auto-zero of rDS(ON) Conduction Offset Effect • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency • Internal Bootstrap Schottky Diode • Bootstrap Capacitor Overcharging Prevention • Supports High Switching Frequency (up to 1MHz) - 3A Sinking Current Capability - Fast Rise/Fall Times and Low Propagation Delays • Three-State PWM Input for Output Stage Shutdown • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement • Pre-POR Overvoltage Protection • VCC Undervoltage Protection • Expandable Bottom Copper Pad for Enhanced Heat Sinking • QFN Package: - Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline - Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile • Pb-Free Plus Anneal Available (RoHS Compliant) Applications • Core Regulators for Intel® and AMD® Microprocessors • High Current DC/DC Converters • High Frequency and High Efficiency VRM and VRD Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Technical Brief 400 and 417 for Power Train Design, Layout Guidelines, and Feedback Compensation Design FN9160 Rev.4.00 May 5, 2008 Page 1 of 12 ISL6614A Pinouts Ordering Information PACKAGE PKG. DWG. # ISL6614ACB* 6614ACB 0 to +85 14 Ld SOIC M14.15 ISL6614ACBZ* (Note) 6614ACBZ 0 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614ACBZA* 6614ACBZ (Note) 0 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614ACR* 66 14ACR 0 to +85 ISL6614ACRZ* (Note) 66 14ACRZ 0 to +85 ISL6614AIB* 6614AIB -40 to +85 14 Ld SOIC M14.15 ISL6614AIBZ* (Note) 6614AIBZ -40 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614AIR* 66 14AIR -40 to +85 16 Ld 4x4 QFN L16.4x4 ISL6614AIRZ* (Note) 66 14AIRZ -40 to +85 16 Ld 4x4 QFN L16.4x4 (Pb-free) ISL6614ACB, ISL6614ACBZ, ISL6614ACBZA, ISL6614AIB, ISL6614AIBZ 14 LD SOIC TOP VIEW PWM1 1 14 VCC PWM2 2 13 PHASE1 GND 3 12 UGATE1 16 Ld 4x4 QFN L16.4x4 LGATE1 4 11 BOOT1 16 Ld 4x4 QFN L16.4x4 (Pb-free) PVCC 5 10 BOOT2 PGND 6 9 UGATE2 LGATE2 7 8 PHASE2 VCC PHASE1 NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pbfree peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. ISL6614ACR, ISL6614ACRZ, ISL6614AIR, ISL6614AIRZ 16 LD 4X4 QFN TOP VIEW PWM1 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. PWM2 PART TEMP. PART NUMBER MARKING RANGE (°C) 16 15 14 13 GND 1 12 UGATE1 LGATE1 2 11 BOOT1 GND FN9160 Rev.4.00 May 5, 2008 5 6 7 8 NC 9 PHASE2 PGND 4 LGATE2 10 BOOT2 NC PVCC 3 UGATE2 Page 2 of 12 ISL6614A ti Block Diagram BOOT1 PVCC VCC UGATE1 PRE-POR OVP FEATURES +5V SHOOTTHROUGH PROTECTION 10k PHASE1 CHANNEL 1 PVCC PWM1 LGATE1 8k PGND CONTROL LOGIC +5V PVCC PGND BOOT2 10k UGATE2 PWM2 SHOOTTHROUGH PROTECTION 8k GND PHASE2 CHANNEL 2 PVCC LGATE2 PGND PAD FN9160 Rev.4.00 May 5, 2008 FOR ISL6614ACR, THE PAD ON THE BOTTOM SIDE OF THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. Page 3 of 12 ISL6614A Typical Application - 4 Channel Converter Using ISL65xx and ISL6614A Gate Drivers BOOT1 +12V +12V UGATE1 VCC PHASE1 LGATE1 +5V DUAL DRIVER ISL6614A VCC VSEN 5V TO 12V BOOT2 COMP FB PVCC +12V UGATE2 ISEN1 PGOOD PWM1 EN PWM2 MAIN ISEN2 CONTROL ISL65xx VID PWM1 PHASE2 PWM2 LGATE2 GND PGND +VCORE ISEN3 FS/DIS PWM3 PWM4 GND BOOT1 +12V +12V ISEN4 UGATE1 VCC PHASE1 LGATE1 DUAL DRIVER ISL6614A PVCC 5V TO 12V BOOT2 +12V UGATE2 PWM1 PHASE2 PWM2 LGATE2 GND FN9160 Rev.4.00 May 5, 2008 PGND Page 4 of 12 ISL6614A Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V VPHASE - 3.5V (
ISL6614ACBZA
物料型号:ISL6614A

器件简介: - ISL6614A是一款集成了两个ISL6613A MOSFET驱动器的芯片,专门设计用于驱动同步整流降压转换器拓扑中的两个N通道MOSFET。 - 该芯片与HIP63xx或ISL65xx多相降压PWM控制器和N通道MOSFET结合,为先进微处理器提供完整的核心电压调节解决方案。

引脚分配: - 芯片提供多种封装选项,包括14引脚SOIC和16引脚QFN封装。 - 引脚包括PWM输入、地、上下MOSFET驱动输出、自举电源输入、相位输入等。

参数特性: - 驱动电压范围从5V到12V,提供在栅极电荷和导通损耗之间权衡的灵活性。 - 集成了先进的自适应零拍穿保护,最小化死区时间,防止上下MOSFET同时导通。 - 支持高开关频率(高达1MHz),具有3A的下沉电流能力和快速的上升/下降时间以及低传播延迟。

功能详解: - 芯片具有三态PWM输入,与Intersil的多相PWM控制器协同工作,防止输出电压在关闭时出现负瞬变。 - 还具有预上电过压保护(Pre-POR OVP)功能,在VCC超过其上电阈值之前启动,为微处理器提供一定程度的保护。

应用信息: - 适用于Intel®和AMD®微处理器的核心调节器。 - 适用于高电流DC/DC转换器、高频和高效率的VRM和VRD。

封装信息: - 提供QFN和SOIC两种封装,QFN封装符合JEDEC PUB95 MO-220 QFN标准,具有更薄的外形和提高的PCB效率。 - Pb-Free Plus Anneal版本可用,符合RoHS标准。
ISL6614ACBZA 价格&库存

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