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ISL6614CBZ-TR5214

ISL6614CBZ-TR5214

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    SOIC14

  • 描述:

    IC GATE DRVR HALF-BRIDGE 14SOIC

  • 详情介绍
  • 数据手册
  • 价格&库存
ISL6614CBZ-TR5214 数据手册
DATASHEET ISL6614 FN9155 Rev.5.00 May 5, 2008 Dual Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features The ISL6614 integrates two ISL6613 MOSFET drivers and is specifically designed to drive two independent power channels in a Multi-Phase interleaved buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6614 drives both the upper and lower gates simultaneously over a range from 5V to 12V. This drive voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during startup. The overtemperature protection feature prevents failures resulting from excessive power dissipation by shutting off the outputs when its junction temperature exceeds +150°C (typically). The driver resets once its junction temperature returns to +108°C (typically). The ISL6614 also features a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events. Features • Pin-to-pin Compatible with HIP6602 SOIC Family for Better Performance and Extra Protection Features • Quad N-Channel MOSFET Drives for Two Synchronous Rectified Bridges • Advanced Adaptive Zero Shoot-Through Protection - Body Diode Detection - Auto-zero of rDS(ON) Conduction Offset Effect • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency • Internal Bootstrap Schottky Diode • Bootstrap Capacitor Overcharging Prevention • Supports High Switching Frequency (up to 1MHz) - 3A Sinking Current Capability - Fast Rise/Fall Times and Low Propagation Delays • Three-State PWM Input for Output Stage Shutdown • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement • Pre-POR Overvoltage +Protection • VCC Undervoltage Protection • Over-Temperature Protection (OTP) with +42°C Hysteresis • Expandable Bottom Copper Pad for Enhanced Heat Sinking • QFN Package: - Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline - Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile • Pb-free Available (RoHS compliant) Applications • Core Regulators for Intel® and AMD® Microprocessors • High Current DC/DC Converters • High Frequency and High Efficiency VRM and VRD Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Technical Brief 400 and 417 for Power Train Design, Layout Guidelines, and Feedback Compensation Design FN9155 Rev.5.00 May 5, 2008 Page 1 of 12 ISL6614 PWM2 PWM1 VCC PHASE1 ISL6614CR, ISL6614CRZ, ISL6614IR, ISL6614IRZ (16 LD QFN) TOP VIEW ISL6614CB, ISL6614CBZ, ISL6614IB (14 LD SOIC) TOP VIEW 16 15 14 13 PWM1 1 14 VCC PWM2 2 13 PHASE1 GND 3 12 UGATE1 LGATE1 4 11 BOOT1 PVCC 5 10 BOOT2 PGND 6 9 UGATE2 PVCC 3 10 BOOT2 LGATE2 7 8 PHASE2 PGND 4 9 GND 1 12 UGATE1 LGATE1 2 11 BOOT1 5 6 7 8 NC LGATE2 PHASE2 NC GND UGATE2 Ordering Information PART NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. # ISL6614CB* ISL6614CB 0 to +85 14 Ld SOIC M14.15 ISL6614CBZ* (Note) 6614CBZ 0 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614CBZA* (Note) 6614CBZ 0 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614CR* ISL 6614CR 0 to +85 16 Ld 4x4 QFN L16.4x4 ISL6614CRZ* (Note) 66 14CRZ 0 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4 ISL6614CRZA* (Note) 66 14CRZ 0 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4 ISL6614IB* ISL6614IB -40 to +85 14 Ld SOIC M14.15 ISL6614IBZ* (Note) 6614IBZ -40 to +85 14 Ld SOIC (Pb-free) M14.15 ISL6614IR* ISL 6614IR -40 to +85 16 Ld 4x4 QFN L16.4x4 ISL6614IRZ* (Note) 66 14IRZ -40 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. FN9155 Rev.5.00 May 5, 2008 Page 2 of 12 ISL6614 Block Diagram BOOT1 PVCC VCC UGATE1 OTP AND PRE-POR OVP FEATURES +5V SHOOTTHROUGH PROTECTION 10k PHASE1 CHANNEL 1 PVCC PWM1 LGATE1 8k PGND CONTROL LOGIC +5V PVCC PGND BOOT2 10k UGATE2 PWM2 SHOOTTHROUGH PROTECTION 8k GND PHASE2 CHANNEL 2 PVCC LGATE2 PGND PAD FN9155 Rev.5.00 May 5, 2008 FOR ISL6614CR, THE PAD ON THE BOTTOM SIDE OF THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. Page 3 of 12 ISL6614 Typical Application - 4 Channel Converter Using ISL65xx and ISL6614 Gate Drivers BOOT1 +12V +12V UGATE1 VCC PHASE1 LGATE1 +5V DUAL DRIVER ISL6614 VCC VSEN 5V TO 12V BOOT2 COMP FB PVCC +12V UGATE2 ISEN1 PGOOD PWM1 EN PWM2 MAIN ISEN2 CONTROL ISL65xx VID PWM1 PHASE2 PWM2 LGATE2 GND PGND +VCORE ISEN3 FS/DIS PWM3 PWM4 GND BOOT1 +12V +12V ISEN4 UGATE1 VCC PHASE1 LGATE1 DUAL DRIVER ISL6614 PVCC 5V TO 12V BOOT2 +12V UGATE2 PWM1 PHASE2 PWM2 LGATE2 GND FN9155 Rev.5.00 May 5, 2008 PGND Page 4 of 12 ISL6614 Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V VPHASE - 3.5V (
ISL6614CBZ-TR5214
物料型号:ISL6614 器件简介:ISL6614是一款集成了两个ISL6613 MOSFET驱动器的芯片,专为多相交错式降压转换器拓扑结构中的两个独立电源通道设计。与HIP63xx或ISL65xx多相降压PWM控制器和N沟道MOSFET配合使用,为先进微处理器提供完整的核心电压调节解决方案。 引脚分配:文档提供了详细的引脚分配图,包括PWM1、PWM2、VCC、PHASE1、GND等引脚及其功能。 参数特性:包括与HIP6602 SOIC系列引脚兼容、四N沟道MOSFET驱动、先进的自适应零射击保护、可调节的栅极电压(5V至12V)、内部自举肖特基二极管等。 功能详解:ISL6614具有自适应零射击保护、自举电容过充保护、支持高达1MHz的高开关频率、3A下沉电流能力、快速上升/下降时间和低传播延迟等特性。 应用信息:适用于Intel®和AMD®微处理器的核心调节器、高电流DC/DC转换器、高频率和高效率的VRM和VRD。 封装信息:提供14 LD SOIC和16 LD QFN两种封装类型,QFN封装符合JEDEC PUB95 MO-220 QFN标准。
ISL6614CBZ-TR5214 价格&库存

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