0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ISL6615CRZ-T

ISL6615CRZ-T

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VFDFN10

  • 描述:

    IC GATE DRVR HALF-BRIDGE 10DFN

  • 数据手册
  • 价格&库存
ISL6615CRZ-T 数据手册
DATASHEET ISL6615 FN6481 Rev 0.00 April 24, 2008 High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features The ISL6615 is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615 drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. The ISL6615 features 6A typical sink current for the low-side gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. The ISL6615 includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the load if the upper MOSFET(s) is shorted. The ISL6615 also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. Features • Dual MOSFET Drives for Synchronous Rectified Bridge • Advanced Adaptive Zero Shoot-Through Protection - Body Diode Detection - LGATE Detection - Auto-zero of rDS(ON) Conduction Offset Effect • Adjustable Gate Voltage for Optimal Efficiency • 36V Internal Bootstrap Schottky Diode • Bootstrap Capacitor Overcharging Prevention • Supports High Switching Frequency (up to 1MHz) - 6A LGATE Sinking Current Capability - Fast Rise/Fall Times and Low Propagation Delays • Support 3.3V PWM Input logic • Tri-State PWM Input for Safe Output Stage Shutdown • Tri-State PWM Input Hysteresis for Applications with Power Sequencing Requirement • Pre-POR Overvoltage Protection • VCC Undervoltage Protection • Expandable Bottom Copper PAD for Better Heat Spreading • Dual Flat No-Lead (DFN) Package - Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile • Pb-Free (RoHS Compliant) Applications • Optimized for POL DC/DC Converters for IBA Systems • Core Regulators for Intel® and AMD® Microprocessors • High Current Low-Profile DC/DC Converters • High Frequency and High Efficiency VRM and VRD • Synchronous Rectification for Isolated Power Supplies Related Literature Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” Technical Brief TB389 “PCB Land Pattern Design and Surface Mount Guidelines for QFN Packages” FN6481 Rev 0.00 April 24, 2008 Page 1 of 11 ISL6615 Ordering Information PART NUMBER (Note) TEMP. RANGE (°C) PART MARKING ISL6615CBZ* 6615 CBZ ISL6615CRZ* 6615 ISL6615IBZ* 6615 IBZ -40 to +70 ISL6615IRZ* 615I -40 to +70 PACKAGE (Pb-free) PKG. DWG. # 0 to +70 8 Ld SOIC M8.15 0 to +70 10 Ld 3x3 DFN L10.3x3 8 Ld SOIC M8.15 10 Ld 3x3 DFN L10.3x3 *Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications. NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Pinouts ISL6615 (10 LD 3x3 DFN) TOP VIEW ISL6615 (8 LD SOIC) TOP VIEW UGATE 1 8 PHASE BOOT 2 7 PVCC 3 PWM 6 4 GND 5 UGATE 1 10 PHASE BOOT 2 N/C 3 VCC LGATE GND 9 PVCC 8 N/C PWM 4 7 5 6 GND VCC LGATE RECOMMEND TO CONNECT PIN 3 TO GND AND PIN 8 TO PVCC Block Diagram ISL6615 (UVCC) BOOT VCC UGATE PRE-POR OVP FEATURES +5V 13.6k POR/ PWM SHOOTTHROUGH PROTECTION PHASE (LVCC) PVCC UVCC = PVCC CONTROL 6.4k LOGIC LGATE GND SUBSTRATE RESISTANCE PAD FN6481 Rev 0.00 April 24, 2008 FOR DFN DEVICES, THE PAD ON THE BOTTOM SIDE OF THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND. Page 2 of 11 ISL6615 FN6481 Rev 0.00 April 24, 2008 Typical Application - 2 Channel Converter VIN +7V TO +13.2V +5V +5V PVCC FB BOOT COMP VCC VCC VSEN PWM1 ISL6615 PWM2 PGOOD UGATE PWM PWM CONTROL (ISL63xx OR ISL65xx) GND PHASE LGATE ISEN1 VID (OPTIONAL) ISEN2 +VCORE +7V TO +13.2V PVCC VIN BOOT FS/EN GND VCC UGATE PWM ISL6615 PHASE LGATE GND ISL6615 CAN SUPPORT 3.3V OR 5V PWM INPUT Page 3 of 11 ISL6615 Absolute Maximum Ratings Thermal Information Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 7V UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V VPHASE - 3.5V (
ISL6615CRZ-T 价格&库存

很抱歉,暂时无法提供与“ISL6615CRZ-T”相匹配的价格&库存,您可以联系我们找货

免费人工找货