DATASHEET
ISL84781
FN6095
Rev 4.00
October 28, 2010
Ultra Low ON-Resistance, Low-Voltage, Single Supply, 8-to-1 Analog Multiplexer
The Intersil ISL84781 device contains precision, bidirectional,
analog switches configured as an 8-channel
multiplexer/demultiplexer. It is designed to operate from a
single +1.6V to +3.6V supply. The device has an inhibit pin to
simultaneously open all signal paths.
ON-resistance is 0.4 with a +3.0V supply and 0.55 with a
single +1.8V supply. Each switch can handle rail-to-rail
analog signals. The off-leakage current is only 4nA max at
+25°C or 40nA max at +85°C with a +3.3V supply.
All digital inputs are 1.8V logic-compatible when using a
single +3V supply.
The ISL84781 is a 8-to-1 multiplexer device that is offered in a
16 Ld TSSOP package, and a 16 Ld thin QFN package.
Table 1 summarizes the performance of this family.
TABLE 1. FEATURES AT A GLANCE
ISL84781
Configuration
8:1 Mux
3V rON
3V tON/tOFF
16ns/13ns
1.8V rON
0.55
1.8V tON/tOFF
24ns/16ns
Packages
16 Ld TSSOP, 16 Ld 3x3 thin QFN
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Application Note AN557 “Recommended Test Procedures
for Analog Switches”
• Pin Compatible Replacement for the MAX4781, and
MAX4617
• ON-resistance (rON)
- V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4
- V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.55
• rON Matching Between Channels . . . . . . . . . . . . . . . . 0.12
• rON Flatness Across Signal Range . . . . . . . . . . . . . . .0.056
• Single Supply Operation. . . . . . . . . . . . . . . . . +1.6V to +3.6V
• Low Power Consumption (PD). . . . . . . . . . . . . . . . . . 4kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300V
Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . >1000V
Thermal Resistance (Typical, Note 6)
JA (°C/W)
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .
150
16 Ld 3x3 Thin QFN Package . . . . . . . . . . . . . . . . .
75
Maximum Junction Temperature (Plastic Package). . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
5. Signals on NO, COM, ADD, or INH exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current
ratings.
6. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications - 3V Supply Test Conditions: VSUPPLY = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 7),
Unless Otherwise Specified. Boldface limits apply over the operating temperature range,
-40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Notes 8, 11)
TYP
MAX
(Notes 8, 11) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON-resistance, rON
Full
V+ = 2.7V, ICOM = 100mA, VNO = V to V+,
(See Figure 5)
0
-
V+
V
25
-
0.41
0.75
Full
-
-
0.8
rON Matching Between Channels,
rON
V+ = 2.7V, ICOM = 100mA, VNO = Voltage at max
rON, (Note 9)
25
-
0.12
0.2
Full
-
-
0.2
rON Flatness, RFLAT(ON)
V+ = 2.7V, ICOM = 100mA, VNO = V to V+,
(Note 10)
25
-
0.056
0.15
Full
-
-
0.15
NO OFF Leakage Current, INO(OFF) V+ = 3.3V, VCOM = 0.3V, 3V, VNO = 3V, 0.3V
COM ON Leakage Current,
ICOM(ON)
V+ = 3.3V, VCOM = VNO = 0.3V, 3V
25
-4
-
4
nA
Full
-40
-
40
nA
25
-15
-
15
nA
Full
-70
-
70
nA
Full
1.4
-
-
V
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, VINH, VADDH
Input Voltage Low, VINL, VADDL
Input Current, IINH, IINL, IADDH,
IADDL
V+ = 3.6V, VINH = VADD = 0V or V+ (Note 12)
Full
-
-
0.5
V
Full
-0.5
-
0.5
µA
DYNAMIC CHARACTERISTICS
Inhibit Turn-ON Time, tON
Inhibit Turn-OFF Time, tOFF
Address Transition Time, tTRANS
Break-Before-Make Time, tBBM
V+ = 2.7V, VNO = V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
V+ = 2.7V, VNO = 1.5V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
V+ = 2.7V, VNO = 1.5V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
V+ = 3.3V, VNO = 1.5V, RL = 50, CL = 35pF,
(See Figure 3, Note 12)
25
-
16
25
ns
Full
-
-
27
ns
25
-
14
23
ns
Full
-
-
25
ns
25
-
19
28
ns
Full
-
-
30
ns
25
-
4
-
ns
Full
1
-
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0, (See Figure 2)
25
-
-39
-
pC
Input OFF Capacitance, COFF
f = 1MHz, VNO = VCOM = 0V, (See Figure 6)
25
-
65
-
pF
FN6095 Rev 4.00
October 28, 2010
Page 3 of 12
ISL84781
Electrical Specifications - 3V Supply Test Conditions: VSUPPLY = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 7),
Unless Otherwise Specified. Boldface limits apply over the operating temperature range,
-40°C to +85°C. (Continued)
PARAMETER
COM OFF Capacitance, COFF
TEST CONDITIONS
f = 1MHz, VNO = VCOM = 0V, (See Figure 6)
TEMP
MIN
(°C) (Notes 8, 11)
25
TYP
-
470
MAX
(Notes 8, 11) UNITS
-
pF
COM ON Capacitance, CCOM(ON)
f = 1MHz, VNO = VCOM = 0V, (See Figure 6)
25
-
485
-
pF
OFF-Isolation
RL = 50, CL = 35pF, f = 100kHz, (See Figure 4)
25
-
65
-
dB
Total Harmonic Distortion (THD)
f = 20Hz to 20kHz, 0.5VP-P, RL = 32
25
-
0.014
-
%
Full
1.6
-
3.6
V
25
-
-
0.05
µA
Full
-
-
1.2
µA
POWER SUPPLY CHARACTERISTICS
Power Supply Range
Positive Supply Current, I+
V+ = 3.6V, VINH, VADD = 0V or V+, Switch On or Off
NOTES:
7. VIN = Input voltage to perform proper function.
8. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
9. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON
value.
10. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.
11. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.
12. Limits established by characterization and are not production tested.
Electrical Specifications: 1.8V Supply Test Conditions: V+ = +1.8V, GND = 0V, VINH = 1V, VINL = 0.4V (Note 7),
Unless Otherwise Specified. Boldface limits apply over the operating temperature range,
-40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
MIN
MAX
(°C) (Notes 8, 11) TYP (Notes 8, 11) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON-resistance, rON
V+ = 1.8V, ICOM = 10.0mA, VNO = 1.0V,
(See Figure 5)
rON Matching Between Channels,
rON)
V+ = 1.8V, ICOM = 10.0mA, VNO = 1.0V,
(See Figure 5)
rON Flatness, RFLAT(ON)
V+ = 1.8V, ICOM = 10.0mA, VNO = 0V, 0.9V, 1.6V,
(See Figure 5)
Full
0
-
V+
V
25
-
0.55
0.85
Full
-
-
0.9
25
-
0.1
-
Full
-
0.13
-
25
-
0.14
-
Full
-
0.16
-
Full
1
-
-
V
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, VINH, VADDH
Input Voltage Low, VINL, VADDL
Input Current, IINH, IINL, IADDH,
IADDL
Full
-
-
0.4
V
V+ = 1.8V, VINH, VADD = 0V or V+ (Note 12)
Full
-0.5
-
0.5
A
V+ = 1.8V, VNO = 1.0V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
25
-
24
33
ns
Full
-
-
35
ns
DYNAMIC CHARACTERISTICS
Inhibit Turn-ON Time, tON
Inhibit Turn-OFF Time, tOFF
Address Transition Time, tTRANS
V+ = 1.8V, VNO = 1.0V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
V+ = 1.8V, VNO = 1.0V, RL = 50, CL = 35pF,
(See Figure 1, Note 12)
25
-
16
25
ns
Full
-
-
27
ns
25
-
25
34
ns
Full
-
-
36
ns
Break-Before-Make Time, tBBM
V+ = 1.8V, VNO = 1.0V, RL = 50, CL = 35pF,
(See Figure 3, Note 12)
25
-
9
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0(See Figure 2)
25
-
-20
-
pC
FN6095 Rev 4.00
October 28, 2010
Page 4 of 12
ISL84781
Test Circuits and Waveforms
V+
C
V+
LOGIC
INPUT
50%
VNO0
0V
NO0
tON
NO1-NO7
INH
VNO0
SWITCH
OUTPUT
C
tr < 5ns
tf < 5ns
90%
VOUT
90%
LOGIC
INPUT
VOUT
COM
GND ADD2-0
CL
35pF
RL
50
0V
tOFF
Logic input waveform is inverted for switches that have the opposite
logic sense.
Repeat test for other switches. CL includes fixture and stray
capacitance.
RL
V OUT = V NOx -----------------------R L + r ON
FIGURE 1B. INHIBIT tON/tOFF TEST CIRCUIT
FIGURE 1A. INHIBIT tON/tOFF MEASUREMENT POINTS
V+
LOGIC
INPUT
tr < 5ns
tf < 5ns
50%
V+
C
C
0V
tTRANS
VNO0
NO1-NO7
VOUT
VNO0
NO0
90%
SWITCH
OUTPUT
ADD2-0 GND
VOUT
COM
INH
CL
35pF
RL
50
LOGIC
INPUT
10%
VNO7
0V
tTRANS
Logic input waveform is inverted for switches that have the opposite
logic sense.
Repeat test for other switches. CL includes fixture and stray
capacitance.
RL
----------------------V OUT = V
NOx R + r
L
ON
FIGURE 1D. ADDRESS tTRANS TEST CIRCUIT
FIGURE 1C. ADDRESS tTRANS MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
V+
C
V+
LOGIC
INPUT
OFF
OFF
ON
RG
0V
VOUT
COM
NOx
0
SWITCH
OUTPUT
VOUT
VOUT
VG
CHANNEL
SELECT
ADD2
ADD1
ADD0
GND
INH
LOGIC
INPUT
CL
1000pF
Q = VOUT x CL
FIGURE 2A. Q MEASUREMENT POINTS
Repeat test for other switches.
FIGURE 2B. Q TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
FN6095 Rev 4.00
October 28, 2010
Page 5 of 12
ISL84781
Test Circuits and Waveforms (Continued)
V+
C
C
tr < 5ns
tf < 5ns
V+
LOGIC
INPUT
NO0-NO7
VNOx
0V
SWITCH
OUTPUT
VOUT
COM
RL
50
ADD2-0
LOGIC
INPUT
90%
VOUT
GND
0V
CL
35pF
INH
tBBM
Repeat test for other switches. CL includes fixture and stray
capacitance.
FIGURE 3A. tBBM MEASUREMENT POINTS
FIGURE 3B. tBBM TEST CIRCUIT
FIGURE 3. BREAK-BEFORE-MAKE TIME
V+
V+
10nF
C
rON = V1/100mA
SIGNAL
GENERATOR
NOx
NOx
ADD2
ADD1
ADD0
COM
ANALYZER
VNX
0V OR V+
100mA
0V OR V+
GND
0V OR V+
V1
CHANNEL
SELECT
ADD2
ADD1
ADD0
COM
INH
GND
CHANNEL
SELECT
INH
RL
Off-Isolation is measured between COM and “Off” NO terminal on
each switch.
Signal direction through switch is reversed and worst case values
are recorded.
FIGURE 4. OFF-ISOLATION TEST CIRCUIT
FIGURE 5. rON TEST CIRCUIT
V+
C
NOx
0V OR V+
1MHz
IMPEDANCE
ANALYZER
ADD2
ADD1
ADD0
COM
GND
CHANNEL
SELECT
INH
FIGURE 6. CAPACITANCE TEST CIRCUIT
FN6095 Rev 4.00
October 28, 2010
Page 6 of 12
ISL84781
Detailed Description
Power-Supply Considerations
The ISL84781 analog multiplexer offers precise switching
capability from a single 1.6V to 3.6V supply with ultra low
ON-resistance (0.41) and high speed operation
(tON = 16ns, tOFF = 13ns) with +3V supply. The device is
especially well-suited for portable battery powered
equipment thanks to the low operating supply voltage (1.6V),
low power consumption (0.2µW), and low leakage currents
(70nA max). High frequency applications also benefit from the
wide bandwidth, and the very high off isolation and crosstalk
rejection.
The ISL84781 construction is typical of most single supply
CMOS analog multiplexers, in that it has two supply pins: V+
and GND. V+ and GND drive the internal CMOS switches
and set its analog voltage limits. Unlike switches with a 4V
maximum supply voltage, the ISL84781 4.7V maximum
supply voltage provides plenty of room for the 10% tolerance
of 3.6V supplies, as well as room for overshoot and noise
spikes.
Supply Sequencing and Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND
(See Figure 7). To prevent forward biasing these diodes, V+
must be applied before any input signals, and the input
signal voltages must remain between V+ and GND. If these
conditions cannot be guaranteed, then one of the following
two protection methods should be employed.
Logic inputs can easily be protected by adding a 1k
resistor in series with the input (see Figure 7). The resistor
limits the input current below the threshold that produces
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
This method is not applicable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low rON switch, so two small signal
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (see Figure 7). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch signal range is
reduced and the resistance may increase, especially at low
supply voltages.
OPTIONAL
PROTECTION
RESISTOR
FOR LOGIC
INPUTS
1k
OPTIONAL PROTECTION
DIODE
V+
LOGIC
VNOx
VCOM
GND
OPTIONAL PROTECTION
DIODE
FIGURE 7. OVERVOLTAGE PROTECTION
FN6095 Rev 4.00
October 28, 2010
The minimum recommended supply voltage is 1.6V but the
part will operate with a supply below 1.5V. It is important to
note that the input signal range, switching times, and
ON-resistance degrade at lower supply voltages. Refer to
the electrical specification tables and “Typical Performance
Curves” beginning on page 8 for details.
V+ and GND power the internal logic and level shifters. The
level shifters convert the logic levels to switched V+ and
GND signals to drive the analog switch gate terminals.
These multiplexers cannot be operated with bipolar supplies,
because the input switching point becomes negative in this
configuration.
Logic-Level Thresholds
This device is 1.8V CMOS compatible (0.5V and 1.4V) over
a supply range of 2.0V to 3.6V (See Figure 12). At 3.6V the
VIH level is about 1.27V. This is still below the 1.8V CMOS
guaranteed high output minimum level of 1.4V, but noise
margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50 systems, signal response is reasonably flat even past
10MHz with a -3dB bandwidth of 52MHz (See Figure 16).
The frequency response is very consistent over a wide V+
range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal feed
through from a switch’s input to its output. Off-Isolation is the
resistance to this feed-through. Figure 17 details the high Off
Isolation provided by these devices. At 100kHz, Off Isolation
is about 65dB in 50 systems, decreasing approximately
20dB per decade as frequency increases. Higher load
impedances decrease Off Isolation due to the voltage divider
action of the switch OFF impedance and the load
impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Page 7 of 12
ISL84781
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analog-
signal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Typical Performance Curves TA = +25°C, Unless Otherwise Specified
0.55
0.75
V+ = 3V
ICOM = 100mA
ICOM = 100mA
0.70
V+ = 1.65V
0.50
0.65
+85°C
0.55
rON ()
rON ()
0.60
V+ = 1.8V
0.50
0.45
0.35
-40°C
V+ = 3V
V+ = 3.6V
0
1
+25°C
0.40
0.35
V+ = 2.7V
0.40
0.45
2
3
0.30
4
0
0.5
1.0
VCOM (V)
FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
0.70
2.0
2.5
3.0
FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE
-10
V+ = 1.8V
ICOM = 100mA
0.65
1.5
VCOM (V)
-20
-30
0.60
-40
+85°C
0.50
+25°C
0.45
0.40
-60
-70
-80
-90
-40°C
-100
0.35
0.30
V+ = 1.8V
-50
Q (pC)
rON ()
0.55
V+ = 3V
-110
0
0.5
1.0
1.5
VCOM (V)
FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE
FN6095 Rev 4.00
October 28, 2010
2.0
-120
0
0.5
1.0
1.5
2.0
2.5
VCOM (V)
FIGURE 11. CHARGE INJECTION vs SWITCH VOLTAGE
Page 8 of 12
3.0
ISL84781
Typical Performance Curves TA = +25°C, Unless Otherwise Specified (Continued)
60
1.6
50
1.2
tRANS (ns)
VINH AND VINL (V)
1.4
VINH
1.0
VINL
0.8
40
30
+85°C
20
0.6
1.0
1.5
2.0
2.5
3.0
V+ (V)
3.5
4.0
FIGURE 12. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
-40°C
10
1.0
4.5
+25°C
1.5
2.0
2.5
3.0
V+ (V)
3.5
4.0
4.5
FIGURE 13. ADDRESS TRANS TIME vs SUPPLY VOLTAGE
25
60
50
tOFF (ns)
tON (ns)
20
40
30
+85°C +25°C
+85°C
+25°C
15
-40°C
-40°C
20
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
1.0
4.5
1.5
2.0
V+ (V)
-10
-10
0
20
40
0.1
1
10
FREQUENCY (MHz)
GND (QFN Paddle Connection: To Ground or Float)
10
V+ = 3V
20
-20
30
-30
40
-40
50
-50
-60
60
ISOLATION
70
80
-80
90
100
-90
100
-100
1k
FIGURE 16. FREQUENCY RESPONSE
SUBSTRATE POTENTIAL (POWERED UP):
4.5
80
100
Die Characteristics
4.0
-70
60
RL = 50
VIN = 0.2VP-P to 2VP-P
OFF ISOLATION (dB)
GAIN
PHASE (°)
NORMALIZED GAIN (dB)
0
V+ = 3V
PHASE
3.5
FIGURE 15. INHIBIT TURN-OFF TIME vs SUPPLY VOLTAGE
FIGURE 14. INHIBIT TURN-ON TIME vs SUPPLY VOLTAGE
0
2.5
3.0
V+ (V)
10k
100k
1M
10M
FREQUENCY (Hz)
110
100M 500M
FIGURE 17. OFF-ISOLATION
TRANSISTOR COUNT:
228
PROCESS:
Submicron CMOS
FN6095 Rev 4.00
October 28, 2010
Page 9 of 12
ISL84781
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For additional products, see www.intersil.com/en/products.html
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Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
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otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6095 Rev 4.00
October 28, 2010
Page 10 of 12
ISL84781
Package Outline Drawing
M16.173
16 LEAD THIN SHRINK SMALL OUTLINE PACKAGE (TSSOP)
Rev 2, 5/10
A
1
3
5.00 ±0.10
SEE DETAIL "X"
9
16
6.40
PIN #1
I.D. MARK
4.40 ±0.10
2
3
0.20 C B A
1
8
B
0.65
0.09-0.20
END VIEW
TOP VIEW
H
1.00 REF
- 0.05
C
1.20 MAX
SEATING
PLANE
0.90 +0.15/-0.10
GAUGE
PLANE
0.25 +0.05/-0.06 5
0.10 M C B A
0.10 C
0°-8°
0.05 MIN
0.15 MAX
SIDE VIEW
0.25
0.60 ±0.15
DETAIL "X"
(1.45)
NOTES:
1. Dimension does not include mold flash, protrusions or gate burrs.
(5.65)
Mold flash, protrusions or gate burrs shall not exceed 0.15 per side.
2. Dimension does not include interlead flash or protrusion. Interlead
flash or protrusion shall not exceed 0.25 per side.
3. Dimensions are measured at datum plane H.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
5. Dimension does not include dambar protrusion. Allowable protrusion
shall be 0.08mm total in excess of dimension at maximum material
condition. Minimum space between protrusion and adjacent lead
(0.65 TYP)
(0.35 TYP)
TYPICAL RECOMMENDED LAND PATTERN
is 0.07mm.
6. Dimension in ( ) are for reference only.
7. Conforms to JEDEC MO-153.
FN6095 Rev 4.00
October 28, 2010
Page 11 of 12
ISL84781
Thin Quad Flat No-Lead Plastic Package (TQFN)
Thin Micro Lead Frame Plastic Package (TMLFP)
)
2X
A
L16.3x3A
0.15 C A
D
16 LEAD THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE
9
D/2
MILLIMETERS
D1
D1/2
2X
N
6
INDEX
AREA
0.15 C B
1
2
3
E1/2
E/2
E1
0.15 C B
A2
0
4X
B
TOP VIEW
A
0.70
0.75
0.80
-
-
-
0.05
-
A2
-
-
0.80
9
0.30
5, 8
0.20 REF
0.18
A3
SIDE VIEW
9
5
NX b
4X P
D
3.00 BSC
-
2.75 BSC
9
1.35
-
E1
2.75 BSC
9
1.35
1.65
7, 8, 10
-
k
0.20
-
-
-
L
0.30
0.40
0.50
8
2
4
3
NX k
Ne
1
2
3
6
INDEX
AREA
E2/2
NX L
N e
9
-
-
12
9
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
A1
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
5
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
SECTION "C-C"
C
L
8. Nominal dimensions are provided to assist with PCB Land
Pattern Design efforts, see Intersil Technical Brief TB389.
L
e
0.60
2. N is the number of terminals.
NX b
10
-
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
8
BOTTOM VIEW
C
L
3
-
NOTES:
9
CORNER
OPTION 4X
(Nd-1)Xe
REF.
4
P
Rev. 0 6/04
(Ne-1)Xe
REF.
E2
7
FN6095 Rev 4.00
October 28, 2010
1.50
0.50 BSC
16
D2
2 N
FOR ODD TERMINAL/SIDE
7, 8, 10
N
(DATUM A)
C C
1.65
3.00 BSC
Nd
7
L1
1.50
E
8
4X P
8
9
0.10 M C A B
D2
(DATUM B)
A1
0.23
D1
e
SEATING PLANE
NOTES
A
E2
0.08 C
MAX
A1
D2
/ / 0.10 C
C
NOMINAL
b
9
0.15 C A
MIN
A3
E
2X
2X
SYMBOL
L1
10
L
e
TERMINAL TIP
FOR EVEN TERMINAL/SIDE
9. Features and dimensions A2, A3, D1, E1, P & are present when
Anvil singulation method is used and not present for saw
singulation.
10. Compliant to JEDEC MO-220WEED-2 Issue C, except for the E2
and D2 MAX dimension.
Page 12 of 12