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ISL8499IVZ

ISL8499IVZ

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP16

  • 描述:

    IC SWITCH QUAD SPDT 16TSSOP

  • 数据手册
  • 价格&库存
ISL8499IVZ 数据手册
DATASHEET ISL8499 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch The Intersil ISL8499 device is a low ON-Resistance, low voltage, bidirectional, Quad SPDT (Dual DPDT) analog switch designed to operate from a single +1.65V to +4.5V supply. Targeted applications include battery powered equipment that benefit from low rON (0.24 and fast switching speeds (tON = 15ns, tOFF = 13ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. With a supply voltage of 4.2V and logic high voltage of 2.85V at both logic inputs, the part draws only 10µA max of ICC current. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This part may be used to “mux-in” additional functionality while reducing ASIC design risk. The ISL8499 is offered in small form factor packages, alleviating board space limitations. The ISL8499 consists of four SPDT switches. It is configured as a dual double-pole/double-throw (DPDT) device with two logic control inputs that control two SPDT switches each. The configuration can be used as a dual differential 2-to-1 multiplexer/demultiplexer. The ISL8499 is pin compatible with the STG3699 and DG2799. TABLE 1. FEATURES AT A GLANCE - ISL8499 Number of Switches 4 SW Quad SPDT (Dual DPDT) 4.3V rON 0.24 4.3V tON/tOFF 15ns/13ns 3.0V rON 0.26 3.0V tON/tOFF 21ns/17ns 1.8V rON 0.45 1.8V tON/tOFF 51ns/43ns Packages 16 Ld 3x3 TQFN, 16 Ld 3x3 QFN, 16 Ld TSSOP FN6111 Rev 3.00 February 5, 2008 Features • Drop in Replacement for the STG3699 and DG2799 • ON-Resistance (rON) - V+ = +4.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24 - V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.26 - V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 • rON Matching between Channels . . . . . . . . . . . . . . . . .0.04 • rON Flatness Across Signal Range . . . . . . . . . . . . . . . .0.05 • Single Supply Operation. . . . . . . . . . . . . . . . +1.65V to +4.5V • Low Power Consumption (PD). . . . . . . . . . . . . . . . . . 9kV HBM NOX, NCX, INX, V+, GND . . . . . . . . . . . . . . . . . . . . . . .>4kV MM COMX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>500V MM NOX, NCX, INX, V+, GND . . . . . . . . . . . . . . . . . . . . . . .>300V CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1kV Thermal Resistance (Typical, Note 3) JA (°C/W) JC (°C/W) TQFN and QFN Package (Notes 4, 5) . 70 10 TSSOP Package (Note 3) . . . . . . . . . . 150 N/A Maximum Junction Temperature (Plastic Package). . . . . . . +150°C Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp Operating Conditions Temperature Range ISL8499IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty. NOTES: 2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. 5. For JC, the “case temp” location is the center of the exposed metal pad on the package underside. Electrical Specifications - 4.3V Supply PARAMETER Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.6V, VINL = 0.5V (Note 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) MIN (Notes 7, 8) TYP MAX (Notes 7, 8) UNITS Full 0 - V+ V 25 - 0.25 -  Full - 0.28 -  25 - 0.04 -  Full - 0.05 -  25 - 0.05 -  Full - 0.05 -  25 -50 - 50 nA Full -150 - 150 nA 25 -50 - 50 nA Full -150 - 150 nA ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) rON Matching Between Channels, rON V+ = 3.9V, ICOM = 100mA, VNO or VNC = Voltage at max rON,(Note 11) rON Flatness, RFLAT(ON) V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 9) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 4.5V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V = 4.5V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF V+ = 3.9V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 15 25 ns Full - - 30 ns V+ = 3.9V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 13 23 ns Full - - 28 ns Break-Before-Make Time Delay, tD V+ = 4.5V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 3, Note 10) Full 2 3 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0See Figure 2) 25 - -120 - pC OFF Isolation RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB FN6111 Rev 3.00 February 5, 2008 Page 3 of 14 ISL8499 Electrical Specifications - 4.3V Supply PARAMETER Total Harmonic Distortion Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.6V, VINL = 0.5V (Note 6), Unless Otherwise Specified (Continued) TEST CONDITIONS MIN (Notes 7, 8) TYP MAX (Notes 7, 8) UNITS 25 - 0.003 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 212 - pF Full 1.65 - 4.5 V 25 - - 0.09 A Full - - 1.4 A 25 - - 12 A Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.6 - - V Full -0.5 - 0.5 A COM ON Capacitance, CCOM(ON) f = 20Hz to 20kHz, VCOM = 2VPP, RL = 600 TEMP (°C) POWER SUPPLY CHARACTERISTICS Power Supply Range Positive Supply Current, I+ Positive Supply Current, I+ V+ = +4.5V, VIN = 0V or V+ V+ = +4.2V, VIN = 2.85V DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL V+ = 4.5V, VIN = 0V or V+, (Note 10) NOTES: 6. VIN = input voltage to perform proper function. 7. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 8. Parts are 100% tested at +25°C. Over-temperature limits established by characterization and are not production tested. 9. Flatness is defined as the difference between maximum and minimum value of ON-Resistance over the specified analog signal range. 10. Limits established by characterization and are not production tested. 11. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value, between NC1 and NC2, NC3 and NC4 or between NO1 and NO2, NO3 and NO4. Electrical Specifications - 3V Supply PARAMETER Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) MIN (Notes 7, 8) TYP MAX (Notes 7, 8) UNITS Full 0 - V+ V 25 - 0.3 0.45  ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) rON Matching Between Channels, rON V+ = 2.7V, ICOM = 100mA, VNO or VNC = Voltage at max rON, (Note 11) rON Flatness, rFLAT(ON) V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 9) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 3.3V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V = 3.3V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating Full - - 0.6  25 - 0.04 0.08  Full - - 0.09  25 - 0.06 0.15  Full - - 0.15  25 - 1.2 - nA Full - 13 - nA 25 - 1 - nA Full - 35 - nA DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF Break-Before-Make Time Delay, tD FN6111 Rev 3.00 February 5, 2008 V+ = 2.7V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 21 30 ns Full - - 35 ns V+ = 2.7V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 17 27 ns Full - - 32 ns Full 2 3 - ns V+ = 3.3V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 3, Note 10) Page 4 of 14 ISL8499 Electrical Specifications - 3V Supply PARAMETER Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 6), Unless Otherwise Specified (Continued) TEST CONDITIONS TEMP (°C) MIN (Notes 7, 8) TYP MAX (Notes 7, 8) UNITS Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0, (See Figure 2) 25 - -82 - pC OFF Isolation RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600 25 - 0.003 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 212 - pF 25 - 0.025 - A Full - 0.715 - A Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.4 - - V Full -0.5 - 0.5 A COM ON Capacitance, CCOM(ON) POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = 3.6V, VIN = 0V or V+ DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL V+ = 3.6V, VIN = 0V or V+ (Note 10) Electrical Specifications - 1.8V Supply PARAMETER Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Note 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) MIN (Notes 7, 8) TYP MAX (Notes 7, 8) UNITS Full 0 - V+ V 25 - 0.45 0.8  Full - - 0.85  ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON V+ = 1.8V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) DYNAMIC CHARACTERISTICS Turn-ON Time, tON Turn-OFF Time, tOFF V+ = 1.65V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 51 65 ns Full - - 70 ns V+ = 1.65V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 1, Note 10) 25 - 43 58 ns Full - - 65 ns Break-Before-Make Time Delay, tD V+ = 2.0V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 3, Note 10) Full 3 8 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0, See Figure 2 25 - -44 - pC OFF Isolation RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 212 - pF Full - - 0.4 V COM ON Capacitance, CCOM(ON) DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL FN6111 Rev 3.00 February 5, 2008 V+ = 2.0V, VIN = 0V or V+ (Note 10) Full 1.0 - - V Full -0.5 - 0.5 A Page 5 of 14 ISL8499 Test Circuits and Waveforms V+ LOGIC INPUT V+ tr < 5ns tf < 5ns 50% 0V tOFF SWITCH INPUT VNO SWITCH INPUT VOUT VOUT NO or NC COM IN 90% SWITCH OUTPUT C 90% LOGIC INPUT 0V CL 35pF RL 50 GND tON Logic input waveform is inverted for switches that have the opposite logic sense. Repeat test for all switches. CL includes fixture and stray capacitance. RL V OUT = V (NO or NC) ---------------------------R L + r  ON  FIGURE 1A. MEASUREMENT POINTS FIGURE 1B. TEST CIRCUIT FIGURE 1. SWITCHING TIMES V+ SWITCH OUTPUT VOUT RG VOUT V+ LOGIC INPUT ON ON OFF C VG VOUT COM NO or NC GND IN CL 0V LOGIC INPUT Q = VOUT x CL FIGURE 2B. TEST CIRCUIT FIGURE 2A. MEASUREMENT POINTS FIGURE 2. CHARGE INJECTION V+ V+ LOGIC INPUT VNX C NO VOUT COM NC 0V RL 50 IN SWITCH OUTPUT VOUT 90% 0V LOGIC INPUT CL 35pF GND tD CL includes fixture and stray capacitance. FIGURE 3A. MEASUREMENT POINTS FIGURE 3B. TEST CIRCUIT FIGURE 3. BREAK-BEFORE-MAKE TIME FN6111 Rev 3.00 February 5, 2008 Page 6 of 14 ISL8499 Test Circuits and Waveforms (Continued) V+ V+ C C rON = V1/100mA SIGNAL GENERATOR NO or NC NO or NC VNX IN 0V or V+ 100mA 0V or V+ COM COM ANALYZER IN V1 GND GND RL FIGURE 5. rON TEST CIRCUIT FIGURE 4. OFF ISOLATION TEST CIRCUIT V+ C V+ C SIGNAL GENERATOR NO or NC COM 50 NO or NC IN1 IN 0V or V+ COM ANALYZER 0V or V+ IMPEDANCE ANALYZER NC or NO GND N.C. COM GND RL FIGURE 6. CROSSTALK TEST CIRCUIT Detailed Description The ISL8499 is a bidirectional, quad single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.65V to 4.5V supply with low on-resistance (0.24) and high speed operation (tON = 15ns, tOFF = 13ns). The device is especially well suited for portable battery powered equipment due to its low operating supply voltage (1.65V), low power consumption (2.7µW max), low leakage currents (150nA max), and the tiny TQFN, QFN and TSSOP packages. The ultra low ON-Resistance and rON flatness provide very low insertion loss and distortion to applications that require signal reproduction. Supply Sequencing and Overvoltage Protection With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see FN6111 Rev 3.00 February 5, 2008 FIGURE 7. CAPACITANCE TEST CIRCUIT Figure 8). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then one of the following two protection methods should be employed. Logic inputs can easily be protected by adding a 1k resistor in series with the input (see Figure 8). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low rON switch, so two small signal diodes can be added in series with the supply pins to provide overvoltage protection for all pins (see Figure 8). These additional diodes limit the analog signal from 1V below V+ to 1V above GND. The low leakage current performance is unaffected by this Page 7 of 14 ISL8499 approach, but the switch signal range is reduced and the resistance may increase, especially at low supply voltages. operating with a 4.2V supply the device draws only 6A of current (see Figure 21 for VIN = 2.85V). High-Frequency Performance OPTIONAL PROTECTION DIODE V+ OPTIONAL PROTECTION RESISTOR INX VNO or NC VCOM GND OPTIONAL PROTECTION DIODE FIGURE 8. OVERVOLTAGE PROTECTION Power-Supply Considerations The ISL8499 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL8499 4.7V maximum supply voltage provides plenty of room for the 10% tolerance of 4.3V supplies, as well as room for overshoot and noise spikes. The minimum recommended supply voltage is 1.65V but will operate with a supply voltage below 1.5V. It is important to note that the input signal range, switching times, and on-resistance degrade at lower supply voltages. Refer to the “Electrical Specification” tables starting on page 3 and “Typical Performance” curves starting on page 6 for details. V+ and GND also power the internal logic and level shiftiers. The level shiftiers convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. In 50 systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 104MHz (see Figure 17). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off Isolation is the resistance to this feedthrough, while Crosstalk indicates the amount of feedthrough from one switch to another. Figure 18 details the high Off Isolation and Crosstalk rejection provided by this part. At 100kHz, Off Isolation is about 68dB in 50 systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease Off Isolation and Crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. Leakage Considerations Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND. This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration. Logic-Level Thresholds This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.7V to 4.5V (see Figure 14). At 2.7V the VIL level is about 0.52V. This is still above the 1.8V CMOS guaranteed low output maximum level of 0.5V, but noise margin is reduced. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. The ISL8499 has been designed to minimize the supply current whenever the digital input voltage is not driven to the supply rails (0V to V+). For example driving the device with 2.85V logic (0V to 2.85V) while FN6111 Rev 3.00 February 5, 2008 Page 8 of 14 ISL8499 Typical Performance Curves TA = +25°C, Unless Otherwise Specified 0.45 0.28 V+ = 4.3V ICOM = 100mA ICOM = 100mA 0.26 0.40 V+ = 1.8V 0.24 rON () rON () 0.35 0.30 V+ = 2.7V 0.25 +85°C 0.22 0.2 +25°C 0.18 V+ = 3V 0.20 V+ = 4.3V 0.16 V+ = 3.6V 0.15 0 1 2 -40°C 3 4 0.14 5 0 1 2 3 4 5 VCOM (V) VCOM (V) FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE FIGURE 9. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 0.50 0.35 V+ = 2.7V ICOM = 100mA V+ = 1.8V ICOM = 100mA 0.45 +85°C 0.30 0.40 rON () rON () +85°C 0.25 +25°C 0.35 0.30 0.20 +25°C -40°C -40°C 0.25 0.15 0 0.5 1.0 1.5 2.0 2.5 0.20 3.0 0 0.5 1.0 VCOM (V) 1.5 2.0 VCOM (V) FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE 1.1 50 1.0 0.9 0 VINH VINH AND VINL (V) Q (pC) V+ = 1.8V V+ = 3V -50 -100 0.8 0.7 VINL 0.6 0.5 0.4 -150 0 0.5 1.0 1.5 2.0 2.5 VCOM (V) FIGURE 13. CHARGE INJECTION vs SWITCH VOLTAGE FN6111 Rev 3.00 February 5, 2008 3.0 0.3 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V+ (V) FIGURE 14. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE Page 9 of 14 ISL8499 200 200 150 150 100 tOFF (ns) tON (ns) Typical Performance Curves TA = +25°C, Unless Otherwise Specified (Continued) +85°C +25°C 100 +85°C +25°C -40°C 50 50 1 1.5 2.0 2.5 3.0 V+ (V) 3.5 4.0 0 4.5 GAIN -20 0 PHASE 20 60 80 RL = 50 VIN = 0.2VP-P to 2VP-P PHASE (°) 40 3.0 3.5 4.0 4.5 10 V+ = 3V -20 20 -30 30 -40 40 -50 50 -60 60 ISOLATION -70 70 -80 80 CROSSTALK -90 90 -100 100 10M 100M FREQUENCY (Hz) CROSSTALK (dB) NORMALIZED GAIN (dB) -10 100 -110 1k 600M FIGURE 17. FREQUENCY RESPONSE 10k 100k 1M 10M FREQUENCY (Hz) 110 100M 500M FIGURE 18. CROSSTALK AND OFF ISOLATION 100 50 V+ = 4.5V V+ = 4.5V VCOM = 0.3V 50 0 0 IOFF (nA) ION (nA) 2.5 FIGURE 16. TURN - OFF TIME vs SUPPLY VOLTAGE V+ = 3V 1M 2.0 V+ (V) FIGURE 15. TURN - ON TIME vs SUPPLY VOLTAGE 0 1.5 1 OFF ISOLATION (dB) 0 -40°C +25°C -50 +25°C -50 +85°C -100 +85°C -100 0 1 2 3 VCOM/NX (V) 4 FIGURE 19. ON LEAKAGE vs SWITCH VOLTAGE FN6111 Rev 3.00 February 5, 2008 5 -150 0 1 2 3 4 VNX (V) FIGURE 20. OFF LEAKAGE vs SWITCH VOLTAGE Page 10 of 14 5 ISL8499 Typical Performance Curves TA = +25°C, Unless Otherwise Specified (Continued) 200 V+ = 4.2V Sweeping Both Logic Inputs ION (A) 150 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND (QFN Paddle Connection: To Ground or Float) TRANSISTOR COUNT: 228 100 PROCESS: Si Gate CMOS 50 0 1 2 3 4 5 VIN1-4 (V) FIGURE 21. SUPPLY CURRENT vs VLOGIC © Copyright Intersil Americas LLC 2005-2008. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN6111 Rev 3.00 February 5, 2008 Page 11 of 14 ISL8499 Thin Shrink Small Outline Plastic Packages (TSSOP) M16.173 N 16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE INDEX AREA E 0.25(0.010) M E1 2 INCHES GAUGE PLANE -B1 B M 0.05(0.002) -A- SYMBOL MIN MAX MIN MAX NOTES A - 0.043 - 1.10 - A1 3 L A D -C- e  A1 b 0.10(0.004) M 0.25 0.010 SEATING PLANE c 0.10(0.004) C A M 0.05 0.15 - A2 0.033 0.037 0.85 0.95 - b 0.0075 0.012 0.19 0.30 9 c 0.0035 0.008 0.09 0.20 - B S NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-153-AB, Issue E. 0.002 0.006 D 0.193 0.201 4.90 5.10 3 E1 0.169 0.177 4.30 4.50 4 e A2 MILLIMETERS 0.026 BSC E 0.246 L 0.020 N a 0.65 BSC 0.256 6.25 0.028 0.50 16 0o - 0.70 6 16 8o 0o - 6.50 7 8o Rev. 1 2/02 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees) FN6111 Rev 3.00 February 5, 2008 Page 12 of 14 ISL8499 Package Outline Drawing L16.3x3 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE Rev 2, 4/07 4X 1.5 3.00 12X 0.50 A B 6 PIN 1 INDEX AREA 6 PIN #1 INDEX AREA 16 13 1 3.00 12 1 .50 ± 0 . 15 9 4 0.15 (4X) 5 8 0.10 M C A B + 0.07 4 16X 0.23 - 0.05 TOP VIEW 16X 0.40 ± 0.10 BOTTOM VIEW SEE DETAIL "X" 0.10 C 0 . 90 ± 0.1 C BASE PLANE ( 2. 80 TYP ) ( SEATING PLANE 0.08 C 1. 50 ) SIDE VIEW ( 12X 0 . 5 ) ( 16X 0 . 23 ) C ( 16X 0 . 60) 0 . 2 REF 5 0 . 00 MIN. 0 . 05 MAX. TYPICAL RECOMMENDED LAND PATTERN DETAIL "X" NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 5. Tiebar shown (if present) is a non-functional feature. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. FN6111 Rev 3.00 February 5, 2008 Page 13 of 14 ISL8499 Thin Quad Flat No-Lead Plastic Package (TQFN) Thin Micro Lead Frame Plastic Package (TMLFP) 2X L16.3x3A 0.15 C A D A 16 LEAD THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE 9 D/2 MILLIMETERS D1 D1/2 2X N 6 INDEX AREA 0.15 C B 1 2 3 E1/2 E/2 E1 MAX NOTES 0.75 0.80 - A1 - - 0.05 - A2 - - 0.80 9 0.30 5, 8 0.20 REF 0.18 D B TOP VIEW A2 A D2 / / 0.10 C 0 C A3 SIDE VIEW 9 5 NX b 4X P E 3.00 BSC - 2.75 BSC 9 1.35 7, 8, 10 - k 0.20 - - - L 0.30 0.40 0.50 8 8 Nd 4 3 Ne 4 3 1 2 3 6 INDEX AREA E2/2 NX L N e 9 12 9 3. Nd and Ne refer to the number of terminals on each D and E. 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. A1 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. 5 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. SECTION "C-C" 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. C L L e 0.60 - 2. N is the number of terminals. NX b 10 - - 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 8 BOTTOM VIEW C L -  NOTES: 9 CORNER OPTION 4X (Nd-1)Xe REF. P Rev. 0 6/04 (Ne-1)Xe REF. E2 7 FN6111 Rev 3.00 February 5, 2008 1.65 NX k D2 2 N FOR ODD TERMINAL/SIDE 1.50 0.50 BSC 2 (DATUM A) C C 7, 8, 10 16 7 L1 9 1.65 N 4X P 8 1.50 0.10 M C A B D2 (DATUM B) A1 - 2.75 BSC 1.35 e SEATING PLANE 9 E1 E2 0.08 C 0.23 3.00 BSC D1 0.15 C B 4X NOMINAL 0.70 b 9 0.15 C A MIN A A3 E 2X 2X SYMBOL L1 10 L e TERMINAL TIP FOR EVEN TERMINAL/SIDE 9. Features and dimensions A2, A3, D1, E1, P &  are present when Anvil singulation method is used and not present for saw singulation. 10. Compliant to JEDEC MO-220WEED-2 Issue C, except for the E2 and D2 MAX dimension. Page 14 of 14
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