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M61018GP

M61018GP

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    M61018GP - MOTOR DRIVER FOR CAMERA - Renesas Technology Corp

  • 数据手册
  • 价格&库存
M61018GP 数据手册
M61018GP MOTOR DRIVER FOR CAMERA REJ03F0071-0100Z Rev.1.0 Sep.19.2003 Description M61018GP is a semiconductor integrated circuit built-in motor driver for compact camera All power transistors which have been used as external parts so far are built in by using minute bi-polar process ,so it contributes to reduction of the part cost and the miniaturization of the system . Features • • • • Built-in DC/DC converter (Presser type,TYP 5.0V) Built-in Regulator circuit for Auto Focus (Depressor type,TYP 4.1V) Built-in IRED drive circuit (TYP Io=1A) Built-in DC motor driver circuit of 1.5CH Application Motor driver for compact camera etc. Recommend Operating Condition Rated supply voltage ······································· 3.0V Supply voltage range ······································· 1.8 to 3.5V Pin Configuration 24 23 22 21 20 19 18 17 VCH 25 CT 26 VDD 27 SGND 28 NC 29 VREF 30 VAF 31 VWL2 32 12 3 456 78 16 15 14 13 12 11 10 9 SH BF4CON T VBMON VB1 SML1 SML2 SML3 NC M61018GP Outline 32P6B Rev.1.0, Sep.19.2003, page 1 of 17 M61018GP Block Diagram CT VBMON VWL VWL SML SML SML SML 2 1 4 3 2 1 VB2 VB1 NC NC 26 VCH 14 Battery Check Circuit 32 1 8 10 11 12 4 13 9 29 Film widing 25 VDD DC/DC Circuit Oscillator OUT1 7 M 27 VB VDD DC motor drive OUT2 OUT3 5 M 31 VAF Control Logic Regulator Circuit 3 VB Lensdrive Shutter drive 30 VREF SH 15 BF4CONT Buffer driver BF4 Buffer driver BF3 Buffer driver BF2 Buffer driver BF1 Shutter drive 16 SRICONT 17 28 18 22 24 2 6 20 VB BF4 VB 19 LED BF3 VB 21 Red -eye BF2 VB 23 IRED BF1 LED SGND PGND PGND PGND PGND PGND 5 4 3 2 1 Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Supply voltage Supply voltage Power dissipation Thermal derating Pin input voltage Another pin Operating temperature Storage temperature Symbol VB VDD Pd Kθ VIF VI/O Topr Tstg Ratings 4.0 6.0 550 4.4 6.0 0 to VDD+0.3 - 20 to 60 - 40 to 150 Unit V V mW mW/ °C V V °C °C Remark note1 note1 Ta=25°C Ta≥25°C 3,4,11,12,13,14,17pin note2 Rev.1.0, Sep.19.2003, page 2 of 17 M61018GP Thermal Derating (Maximum Rating) 700 POWER DISSIPATION Pd (mW) 600 - 4.4mW/˚C 500 400 300 200 100 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta (˚C) Rev.1.0, Sep.19.2003, page 3 of 17 M61018GP Electrical Characterristics (Ta=25°C,VB=3.0V,unless otherwise noted) Limits Classification Parameter Operating supply voltage range Consuming current While STAND BY consuming current While STAND BY consuming current Usual consuming current IDD2 Consuming current When driver don't operate (Operating only DC/DC converter) DC/DC converter Operating start voltage Operating stop voltage Oscillation frequency DUTY Output voltage Input stability Load stability Maximum output current Regulator Output voltage Load stability Ripple voltage Response time DC motor driver Operating voltage Maximum output current Continual maximum output current Output saturation voltage Spark killer diode forward voltage Overheat protection circuit operating temperature Overheat protection hysteresis Shutter driver Operating voltage Simple output bias current Maximum output current Output saturation voltage Spark killer diode forward voltage VSF(shutter) Io=600mA   1.5 V Vsat(shutter) Io=500mA SRICONT=0V   0.5 V Isht2 700   mA VB(shutter) Isht1 VB voltage 1Ω Between SRICONT to GND 1.6 480  580 3.5 680 V mA ∆Taohp 25 40 55 °C Vsat(DC motor) VSF(DC motor) Taohp 135 150 165 °C Io=600mA Io=500mA Upper side+Lower side (saturation voltage total)   1.5 V 0  0.5 V Iocont 500   mA VAF ∆VAF Vrip TAF VB(DC motor) Iomax VDD=4.5 to 5.5V IAF=50mA VDD=5V IAF=0 to 20mA VB=2.85V VDD ≥4.5V CVAF=10µF CVREF=0.1µF VB voltage t=10S 3.90 -10 0 0 1.6 1.8   4.10   4.30 10 10 10 3.5  V mV MVP-P ms V A Vstart Vstop fosc duty ∆Vout ∆Vout1 ∆Vout2 Iout VDD voltage VB=2.0 to 3.3V Iout=50mA VB=2.85V Iout=0 to 100mA VB=2.85V Vout≥4.5V VB voltage VB voltage C=330pF   35K 66 4.5   100   50K 78 5.0    1.8 1.0 65K 90 5.5 100 100  V V Hz % V mV mV mA *1 *1 *1 *1 *1 *1 *1 *1  5.0 10.0 mA IDD1 VWL1:H,VWL2:H   5.0 µA IB1 VWL1:H,VWL2:H   5.0 µA Symbol VB Test condition min 1.8 typ 3.0 max 3.5 Unit V Note Note : *1 L=47µH, CVDD=100µF Rev.1.0, Sep.19.2003, page 4 of 17 M61018GP Electrical Characterristics (cont.) (Ta=25°C,VB=3.0V,unless otherwise noted) Limits Classification Buffer1 Parameter Operating voltage Maximum output current Output saturation voltage Buffer2 Operating voltage Maximum output current Output saturation voltage Buffer3 Operating voltage Maximum output current Output saturation voltage Buffer4 Operating voltage Maximum output current Output saturation voltage Input current H input voltage L input voltage BC Output voltage Ibf4cont VinH VinL Vbc VB=1.6 to 3.5V BF4CONT=0V -70 4.2 0 2/3VB -0.15 -50   2/3VB -30 6.0 0.3 2/3VB +0.15 µA V V V Vsat(BF4) Io =100mA   0.5 V VB(BF4) Ibf4 VB voltage 1.6 150   3.5  V mA Vsat(BF3) Io=500mA   0.5 V VB(BF3) Ibf3 VB voltage t=1S 1.6 800   3.5  V mA Vsat(BF2) Io=500mA   0.5 V VB(BF2) Ibf2 VB voltage t=1S 1.6 800   3.5  V mA Vsat(BF1) Io=1A   0.5 V Symbol VB(BF1) Ibf1 Test condition VB voltage t=1S min 1.6 2.0 typ   max 3.5  Unit V A Note Rev.1.0, Sep.19.2003, page 5 of 17 M61018GP VWL truth table VWL1 H H L L * VWL2 H L L H Output condition Output OFF condition Oscillation start (Oscillator ON) condition DC/DC converter (5V)output condition DC/DC&VAF regulator output condition VBMON output condition It needs the interval over 2mS in case of moving from the oscillation on to the output condition of DC/DC converter. SML truth table INPUT SML1 H H SML2 H H SML3 H H SML4 H L MOTOR1 Stand-by Forward rotation H H L H Reverse rotation H H H H L L L H H L H L Brake Stand-by Stand-by Stand-by Stand-by Forward rotation H H L L L L L L L L L L H H H H L L L L L L H H L L H H L L H L H L H L H L H L Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Reverse Brake Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF L L OFF OFF OFF OFF OFF OFF OFF OFF H L OFF OFF OFF OFF OFF OFF OFF OFF Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by Stand-by ON Stand-by OFF OFF OFF OFF ON ON OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF ON OFF ON OFF OFF OFF OFF OFF OFF OFF OFF ON ON BF2 BF3 BF2+BF3 BF1 Shutter+BF1 Shutter control L OFF OFF L OFF H OFF OFF L Stand-by Stand-by Stand-by OFF OFF OFF OFF OFF OFF OFF OFF OFF MOTOR2 control Stand-by L H OFF Stand-by OFF OFF OFF MOTOR2 Stand-by Stand-by Motor each output out1 OFF H out2 OFF L out3 OFF OFF Buffer each output SH Stand-by Stand-by BF1 OFF OFF BF2 OFF OFF BF3 OFF OFF Note MOTOR1 control * Please pass through the Brake or Stand-by mode by all means in case of moving from forward rotation to Reverse rotation or from Reverse rotation to forward rotation by the motor control. (ex.)Forward rotation --> Brake --> Reverse rotation, Reverse rotation-->Stand-by --> Forward rotation BF4 truth table Input BF4CONT H L Output BF4 OFF L Rev.1.0, Sep.19.2003, page 6 of 17 M61018GP Sequence Time Chart Example Input signal VB VWL1 VWL2 Output signal VDD VAF IC control content Oscillator Control SW 1mS 2mS 5mS Regulator(VAF) : ON DC/DC converter(VDD) : ON Oscillator : ON Rev.1.0, Sep.19.2003, page 7 of 17 M61018GP Description of Pin Ta=25°C PIN NO. 1 PIN NAME VWL1 (INPUT) VINL IINH PGND5 PERIPHERAL CIRCUIT OF PINS VDD Limits Parameter VINH min VDD -0.3 0  -70 typ    -45 max 6.0 Unit V NOTE 0.3 3.0 -25 V µA µA VIH=5.5V VIL=0V IINL 2 PGND2 PGND2 3 OUT3 VDD VB2 IOUT VSAT 1.8     0.5 A V VB=3.0V Io=500mA Upper side+Lower side (saturation voltage total) PGND2 4 VB2 VB2 5 OUT2 VDD VB2 IOUT VSAT 1.8     0.5 A V VB=3.0V Io=500mA Upper side+Lower side (saturation voltage total) PGND1 6 PGND1 PGND1 7 OUT1 VDD VB1 IOUT VSAT 1.8     0.5 A V VB=3.0V Io=500mA Upper side+Lower side (saturation voltage total) PGND1 Rev.1.0, Sep.19.2003, page 8 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN NO. 8 PIN NAME SML4 (INPUT) PERIPHERAL CIRCUIT OF PINS VDD Limits Parameter VINH VINL IINH IINL PGND5 min 2.0 0  -60 typ    -40 max 6.0 0.3 3.0 -20 Unit V V µA µA NOTE VIH=5.5V VIL=0V 9 NC 10 SML3 (INPUT) VDD VINH VINL IINH IINL PGND5 2.0   6.0 0.3 3.0 -20 V V µA µA  -60  -40 VIH=5.5V VIL=0V 11 SML2 (INPUT) VDD VINH VINL IINH IINL PGND5 2.0   6.0 0.3 3.0 -20 V V µA µA  -60  -40 VIH=5.5V VIL=0V 12 SML1 (INPUT) VDD VINH VINL IINH IINL PGND5 2.0 0  -60    -40 6.0 0.3 3.0 -20 V V µA µA VIH=5.5V VIL=0V 13 VB1 VB1 14 VBMON VB1 VOUT 2/3VB -0.15 2/3VB 2/3VB +0.15 V VB=1.6 to 3.5V PGND1 Rev.1.0, Sep.19.2003, page 9 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN NO. 15 PIN NAME BF4CONT (INPUT) PERIPHERAL CIRCUIT OF PINS VDD Limits Parameter VINH VINL IINH IINL PGND5 min 4.2 0  -70 typ    -45 max 6.0 0.3 3.0 -25 Unit V V µA µA NOTE VIH=5.5V VIL=0V 16 SH VB1 IOUT VSAT 700     0.5 mA V VB=3.0V Io=500mA SRICONT=0V PGND5 17 SRICONT VB1 IOUT VOUT 700 480  580  680 mA mV VB=3.0V 1Ω Between SRICONT to GND PGND5 18 PGND5 PGND5 19 BF3 IOUT VSAT PGND5 800     0.5 mA V VB=3.0V Io=500mA 20 BF4 IOUT VSAT PGND5 150     0.5 mA V VB=3.0V Io=100mA 21 BF2 IOUT VSAT PGND4 800     0.5 mA V VB=3.0V Io=500mA Rev.1.0, Sep.19.2003, page 10 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN NO. 22 PIN NAME PGND4 PERIPHERAL CIRCUIT OF PINS Parameter Limits min typ max Unit NOTE PGND4 23 BF1 IOUT VSAT PGND4 2     0.5 A V VB=3.0V Io=1A 24 PGND3 PGND3 25 VCH VDD IOUT 1   A VB=3.0V PGND3 26 CT VDD IOUT1 IOUT2 2.5 -45 5.0 -30 10.0 -15 µA µA DISCHARGE CURRENT CHARGE CURRENT PGND5 PGND3 27 VDD VDD VOUT 4.5 5.0 5.5 V 28 SGND SGND Rev.1.0, Sep.19.2003, page 11 of 17 M61018GP Description of Pin (cont.) Ta=25°C PIN NO. 29 PIN NAME NC PERIPHERAL CIRCUIT OF PINS Parameter Limits min typ max Unit NOTE 30 VREF VDD VOUT 1.5 1.6 1.7 V PGND2 SGND 31 VAF VDD VOUT 3.9 4.1 4.3 V VDD=4.5 to 5.5V IL=0 to 50mA PGND2 SGND 32 VWL2 (INPUT) VDD VINH VDD -0.3    -45 6.0 V VINL IINH PGND2 0  -70 0.3 3.0 -25 V µA µA VIH=5.5V VIL=0V IINL Rev.1.0, Sep.19.2003, page 12 of 17 M61018GP Application Example MICON A/D C4 CT VBMON MICON PORT BATTERY VWL VWL SML SML SML SML 2 1 4 3 2 1 VB2 VB1 NC NC 26 VCH 14 32 1 8 10 11 12 4 13 9 29 Film widing 25 L1 VB D1 C1 DC/DC Circuit Oscillator Battery Check Circuit OUT1 7 M VDD 27 VDD DC motor drive OUT2 OUT3 5 M R=1 to 3Ω L ens d r i ve Shutter drive C5 C2 C3 MICON PORT 31 VAF Control Logic Regulator Circuit 3 VB 30 VREF Buffer driver BF4 Buffer driver BF3 Buffer driver BF2 Buffer driver BF1 Shutter drive SH R=1 to 3Ω 16 SRICONT BF4CONT 15 17 28 18 22 24 2 6 R=1Ω,0.5W (Constant current by this Resistor) 20 VB BF4 VB 19 LED BF3 VB 21 R ed -eye BF2 VB 23 IRED BF1 LED SGND PGND PGND PGND PGND PGND 5 4 3 2 1 IMAX=100mA IMAX=500mA IMAX=500mA IMAX=2A C1:100µF ALUMINUM ELECTROLYTIC CAPACITOR + 2.2µF CERAMIC CAPACITOR C2:10µF TANTALUM OR ALUMINUM ELECTROLYTIC CAPACITOR C3:0.01µF CERAMIC CAPACITOR C4:330pF CERAMIC CAPACITOR C5:220µF ALUMINUM ELECTROLYTIC CAPACITOR L1:47µH(SUMIDA ELECTRIC CO.,LTD. :CDRH62B-470MC) D1:SCHOTTKY BARRIER DIODE(ROHM CO.,LTD.:RB461F) Note1:Please be separate, and connect SGND with Battery GND. Note2:Please be separate, and connect PGND3 with Battery GND. Rev.1.0, Sep.19.2003, page 13 of 17 M61018GP Typical Performance Data (Ta=25°C) VAF VS. Io 4.2 VDD=5V 4.1 4 3.9 3.8 3.7 0 20 40 60 Io (mA) VAF VS. VDD 4.2 4.15 4.1 4.05 4.90 4 3.95 3.9 4 4.5 5 5.5 6 6.5 7 7.5 8 VDD (V) 4.80 4.70 1.8 2.2 2.6 VB (V) 3 3.4 3.8 5.20 5.10 5.00 80 100 5.10 5.00 4.90 4.80 4.70 0 20 40 60 80 100 120 140 VDD VS. Io 5.20 VB=3V Io (mA) VDD VS.VB VBMON VS. VDD 5 4 3 2 1 0 1.8 2.2 2.6 3 3.4 3.8 VDD (V) Rev.1.0, Sep.19.2003, page 14 of 17 M61018GP BF1 Vo(sat) VS. Io 600 500 400 300 200 100 0 1 10 Io(mA) 100 1000 600 500 400 300 200 100 0 1 10 100 Io(mA) 1000 BF2 Vo(sat) VS. Io BF3 Vo(sat) VS. Io 600 500 400 300 200 100 0 1 10 100 Io(mA) 1000 600 500 400 300 200 100 0 1 BF4 Vo(sat) VS. Io 10 100 Io(mA) 1000 SH Vo(sat) VS. Io 600 500 400 300 200 100 0 1 10 100 Io(mA) 1000 Rev.1.0, Sep.19.2003, page 15 of 17 M61018GP OUT1 hi side Vo(sat) VS. Io 300 250 200 150 100 50 0 1 10 Io(mA) 100 1000 300 250 200 150 100 50 0 1 10 Io(mA) 100 1000 OUT1 low side Vo(sat) VS. Io 300 250 200 150 100 50 0 1 OUT2 hi side Vo(sat) VS. Io 300 250 200 150 100 50 0 OUT2 low side Vo(sat) VS. Io 10 Io(mA) 100 1000 1 10 Io(mA) 100 1000 OUT3 hi side Vo(sat) VS. Io 300 250 200 150 100 50 0 1 10 Io(mA) 100 1000 300 250 200 150 100 50 0 1 OUT3 low side Vo(sat) VS. Io 10 Io(mA) 100 1000 Rev.1.0, Sep.19.2003, page 16 of 17 M61018GP 32P6B-A JEDEC Code − MD Weight(g) 0.17 Lead Mater ial Allo y 42 Plastic 32pin 7✕7mm bodLQFP y e Package Dimensions EIAJ Package Code LQFP32-P-77-0.80 HD D 25 8 17 9 16 E HE A2 A3 A1 b L Detail F Lp x M c Rev.1.0, Sep.19.2003, page 17 of 17 32 b2 I2 Recommended Mount P ad 24 1 Symbol A e F L1 A A1 A2 b c D E e HD HE L L1 Lp A3 x y b2 I2 MD ME y Dimension in Millimeters Min Nom Max 1.7 − − 0.1 0.2 0 1.4 − 0.3 0.35 0.45 0.105 0.125 0.175 6.9 7.0 7.1 6.9 7.0 7.1 0.8 − − 8.8 9.0 9.2 8.8 9.0 9.2 0.3 0.5 0.7 1.0 − − 0.45 0.6 0.75 − − 0.25 − 0.2 − − − 0.1 − 0˚ 10˚ − − 0.5 1.0 − − 7.4 − − 7.4 − − ME Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500 Fax: (408) 382-7501 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom Tel: (1628) 585 100, Fax: (1628) 585 900 Renesas Technology Europe GmbH Dornacher Str. 3, D-85622 Feldkirchen, Germany Tel: (89) 380 70 0, Fax: (89) 929 30 11 Renesas Technology Hong Kong Ltd. 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: 2265-6688, Fax: 2375-6836 Renesas Technology Taiwan Co., Ltd. FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. 26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2003. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 1.0
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