N0602N-S19-AY

Preliminary Data Sheet N0602N N-channel MOSFET R07DS0558EJ0200 Rev.2.00 2020.6.10 60 V, 100 A, 4.6 mΩ Features • • • • • • Low on-state resistance : RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) Low Ciss : Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) High current : ID(DC) = ±100 A RoHS Compliant Quality Grade : Standard Applications : For high current switching Ordering Information Part No. N0602N-S19-AY Package TO-220AB, Pb-free Note1 Packing 50 pcs / Magazine (Tube) Note: 1. Pb-free means that this product does not contain lead in the external electrode. Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Symbol VDSS Ratings 60 Unit V Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) VGSS ID(DC) ±20 ±100 V A Drain Current (pulse) Note2 Total Power Dissipation (TC = 25°C) ID(pulse) PT1 ±400 156 A W Total Power Dissipation (TA = 25°C) Channel Temperature PT2 Tch 1.5 150 W °C Storage Temperature Single Avalanche Current Note3 Tstg IAS −55 to +150 55 °C A Single Avalanche Energy Note3 EAS 300 mJ Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of Semiconductor Devices) and individual reliability data. Notes: 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 µH Thermal Resistance Item Symbol Max. Value Note4 Unit Channel to Case Thermal Resistance Rth(ch-C) 0.8 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W Notes: 4. This data is the designed target maximum value on Renesas’s measurement condition. (Not tested) R07DS0558EJ0200 Rev.2.00 2020.6.10 Page 1 of 6 N0602N Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Symbol IDSS Gate Leakage Current Gate to Source Cut-off Voltage IGSS VGS(off) Forward Transfer Admittance Note5 Drain to Source On-state Resistance Note5 | yfs | RDS(on) Input Capacitance Output Capacitance MIN. TYP. 2.0 MAX. 1 Unit µA Test Conditions VDS = 60 V, VGS = 0 V ±100 4.0 nA V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA 4.6 S mΩ VDS = 10 V, ID = 50 A VGS = 10 V, ID = 50 A 35 3.7 Ciss Coss 7730 560 pF pF VDS = 25 V, VGS = 0 V, Reverse Transfer Capacitance Crss 290 pF f = 1 MHz Turn-on Delay Time td(on) 35 ns VDD = 30 V, ID = 50 A, Rise Time Turn-off Delay Time tr td(off) 12 76 ns ns VGS = 10 V, RG = 0 Ω Fall Time Total Gate Charge tf QG 14 133 ns nC VDD = 48 V, Gate to Source Charge Gate to Drain Charge QGS QGD 38 38 nC nC VGS = 10 V, ID = 100 A VF(S-D) trr 44 V ns IF = 100 A, VGS = 0 V IF = 50 A, VGS = 0 V, Qrr 61 nC di/dt = 100 A/µ s Body Diode Forward Voltage Note5 Reverse Recovery Time Reverse Recovery Charge Notes: 5. Pulsed test R07DS0558EJ0200 Rev.2.00 2020.6.10 1.5 Page 2 of 6 N0602N Chapter Title Typical Characteristics Note6 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 200 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 150 100 50 0 0 0 25 50 100 75 125 150 0 175 TC - Case Temperature - °C 50 25 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 1000 RDS(on) Limited PW = 300 µs 1 ms 100 10 ms 10 Power Dissipation Limited 1 TC = 25°C Single Pulse Note7 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - ° C/W 1000 Single pulse Note8 Rth(ch-A) = 83.3°C/W 100 TA = 25°C 10 Rth(ch-C) = 0.80°C/W 1 0.1 0.01 0.1 m 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Notes: 6. Designed target value on Renesas measurement condition. (TC = 25°C, unless otherwise specified) 7. This data is the designed value on Renesas’s measurement condition. Renesas recommends that operating conditions are designed according to a document “Power MOSFET/IGBT Attention of Handling Semiconductor Devices (R07ZZ0010)”. 8. This data is the designed target maximum value on Renesas’s measurement condition. R07DS0558EJ0200 Rev.2.00 2020.6.10 Page 3 of 6 N0602N Chapter Title DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 VGS = 10 V 300 ID - Drain Current - A ID - Drain Current - A 400 200 100 0 0.2 0.4 0.6 0.8 1 1.2 10 1 0.1 0.01 Pulsed 0 125°C TAT= C=125℃ 75°C 75℃ 25°C 25℃ −25°C -25℃ 1.4 VDS = 10 V Pulsed 0.001 1.6 0 VDS - Drain to Source Voltage - V 3 2 VDS = 10 V ID = 1.0 mA 0 0 50 100 150 100 TTAC==125℃ 125°C 75°C 75℃ 25°C 25℃ −25°C -25℃ 10 1 0.1 VDS = 10 V Pulsed 0.01 0.01 0.1 10 VGS = 10 V 8 6 4 Pulsed 0 10 100 ID - Drain Current - A R07DS0558EJ0200 Rev.2.00 2020.6.10 10 100 1000 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 1 ID - Drain Current - A Tch - Channel Temperature - °C 2 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V 4 -50 4 3 2 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1 1 25 ID = 50 A Pulsed 20 15 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 N0602N Chapter Title 8 6 4 VGS = 10 V ID = 50 A Pulsed 2 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 -50 0 50 100 100000 10000 Ciss 1000 Coss VGS = 0 V f = 1.0 MHz 100 0.01 150 Tch - Channel Temperature - °C 100 10 DYNAMIC INPUT CHARACTERISTICS 14 1000 tf VGS - Gate to Source Voltage - V td (on), tr, td (off), tf - Switching Time - ns 1 0.1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) 100 td(on) 10 tr VDD = 30 V VGS = 10 V RG = 0 Ω 12 VDD = 12 V 30 V 48 V 10 8 6 4 2 ID = 100 A 0 1 0.1 1 10 0 100 20 40 60 80 100 120 140 QG - Gate Charge - nC ID - Drain Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 100 VGS = 10 V 100 10 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A Crss 0V 1 0.1 Pulsed 0.01 0 0.4 0.8 1.2 VF(S-D) - Source to Drain Voltage - V R07DS0558EJ0200 Rev.2.00 2020.6.10 1.6 10 VGS = 0 V di/dt = 100 A/µs 1 0.1 1 10 100 IF - Diode Forward Current - A Page 5 of 6 N0602N Chapter Title Package Drawing (Unit: mm) JEDEC Package Code RENESAS Code Previous Code MASS (Typ) [g] TO-220AB PRSS0004AU-A TO-220ABB 2.1 Unit: mm Equivalent Circuit 2,4 Drain Body Diode 1 Gate 3 Source R07DS0558EJ0200 Rev.2.00 2020.6.10 Page 6 of 6 1. 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