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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA
NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3510M04
NE3510M04-A
NE3510M04-T2
Order Number
NE3510M04-T2-A
NE3510M04-T2B NE3510M04-T2B-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Quantity
50 pcs (Non reel)
Marking
V81
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Source), Pin 2 (Drain) face
3 kpcs/reel
the perforation side of the tape
15 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
−3.0
V
Drain Current
ID
IDSS
mA
Gate Current
IG
140
μA
125
mW
Total Power Dissipation
Ptot
Note
Channel Temperature
Tch
+150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10676EJ02V0DS (2nd edition)
Date Published October 2008 NS
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2007, 2008
NE3510M04
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDS
−
2
3
V
Drain Current
ID
−
15
30
mA
Input Power
Pin
−
−
0
dBm
Drain to Source Voltage
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = −3 V
−
0.5
10
μA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
42
70
97
mA
VGS (off)
VDS = 2 V, ID = 100 μA
−0.35
−0.7
−1.10
V
Transconductance
gm
VDS = 2 V, ID = 15 mA
70
−
−
mS
Noise Figure
NF
VDS = 2 V, ID = 15 mA, f = 4 GHz
−
0.45
0.65
dB
Associated Gain
Ga
14.5
16
−
dB
−
+11
−
dBm
Gate to Source Cutoff Voltage
Gain 1 dB Compression
Output Power
2
PO (1 dB)
VDS = 2 V, ID = 15 mA (Non-RF),
f = 4 GHz
Data Sheet PG10676EJ02V0DS
NE3510M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
Drain Current ID (mA)
200
150
100
80
70
60
50
40
30
10
100
150
200
0
–1.0
250
–0.8
–0.6
–0.4
–0.2
Ambient Temperature TA (°C)
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Ga
0.6
0.5
0.4
0.3
0.2
0.1
0.0
NFmin
0
5
10
24
VDS = 2 V
22
ID = 15 mA
20
18
16
14
12
10
8
6
4
2
0
15
100
90
Drain Current ID (mA)
1.2
1.1
1.0
0.9
0.8
0.7
0
VGS = 0 V
80
–0.1 V
70
–0.2 V
60
–0.3 V
50
40
–0.4 V
30
–0.5 V
20
–0.6 V
10
–0.7 V
0
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
f = 2.0 GHz
1.1
VDS = 2 V
1.0
0.9
0.8
0.7
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Ga
NFmin
5
10
15
20
25
30
24
22
20
18
16
14
12
10
8
6
4
2
0
35
Minimum Noise Figure NFmin (dB)
Frequency f (GHz)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Drain Current ID (mA)
Ga
NFmin
5
10
15
20
24
f = 4.0 GHz
22
VDS = 2 V
20
18
16
14
12
10
8
6
4
2
0
25
30
35
Associated Gain Ga (dB)
50
Associated Gain Ga (dB)
Minimum Noise Figure NFmin (dB)
VDS = 2 V
20
50
0
Minimum Noise Figure NFmin (dB)
90
Associated Gain Ga (dB)
Total Power Dissipation Ptot (mW)
250
Drain Current ID (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10676EJ02V0DS
3
NE3510M04
OUTPUT POWER, GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
20
60
f = 4 GHz, VDS = 2 V
ID = 15 mA set (Non-RF)
Gain
50
Pout (1 tone)
10
40
5
30
0
20
ID
–5
–10
–20
–15
–10
–5
10
IG
0
Drain Current ID (mA)
Gate Current IG (mA)
Output Power Pout (1 tone) (dBm)
Gain (dB)
15
5
10
0
15
Input Power Pin (1 tone) (dBm)
OUTPUT POWER, IM3, DRAIN CURRENT
vs. INPUT POWER
20
50
f = 4 GHz, VDS = 2 V
ID = 15 mA set (Non-RF)
OIP3 = +20 dBm
45
Pout
10
40
0
35
IIP3 = +4 dBm
–10
30
IM3 (H)
–20
25
IM3 (L)
–30
20
–40
15
–50
ID
–60
–70
–40
5
–30
–20
–10
Input Power Pin (1 tone) (dBm)
Remark The graphs indicate nominal characteristics.
4
10
Data Sheet PG10676EJ02V0DS
0
0
10
Drain Current ID (mA)
Output Power Pout (1 tone) (dBm)
3rd Order Intermodulation Distortion IM3 (dBm)
30
NE3510M04
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PG10676EJ02V0DS
5
NE3510M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
PIN CONNECTIONS
1.
2.
3.
4.
6
Source
Drain
Source
Gate
Data Sheet PG10676EJ02V0DS
2.0±0.1
2
1
1.25
3
4
1.30
0.65
1.30
3
4
0.30+0.1
–0.05
0.11+0.1
–0.05
1
0.30+0.1
–0.05
0.59±0.05
(1.05)
0.65
0.60
0.65
1.25
2
1.25±0.1
V81
2.0±0.1
(Bottom View)
0.30+0.1
–0.05
0.40+0.1
–0.05
2.05±0.1
NE3510M04
MOUNTING PAD DIMENSIONS (REFERENCE ONLY)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
3
4
0.5
1
1.3
1.25
0.6
2
1.6
0.6
Data Sheet PG10676EJ02V0DS
7
NE3510M04
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
8
Data Sheet PG10676EJ02V0DS
IR260
HS350
NE3510M04
• The information in this document is current as of October, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
Data Sheet PG10676EJ02V0DS
9
NE3510M04
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.