NE3512S02-T1D-A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic (S02) package APPLICATIONS • C to Ku-band DBS LNB • Other C to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package NE3512S02-T1C NE3512S02-T1C-A S02 (Pb-Free) NE3512S02-T1D NE3512S02-T1D-A Quantity 2 kpcs/reel Marking C 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 4 (Gate) faces the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3512S02 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS −3 V Drain Current ID IDSS mA Gate Current IG 100 µA 165 mW Total Power Dissipation Ptot Note Channel Temperature Tch +125 °C Storage Temperature Tstg −65 to +125 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10592EJ01V0DS (1st edition) Date Published February 2006 CP(N) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2005, 2006 NE3512S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA VGS (off) VDS = 2 V, ID = 100 µA −0.2 −0.7 −2.0 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz − 0.35 0.5 dB Associated Gain Ga 12.5 13.5 − dB Gate to Source Cutoff Voltage 2 Data Sheet PG10592EJ01V0DS NE3512S02 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 200 Drain Current ID (mA) Total Power Dissipation Ptot (mW) 250 150 100 50 80 60 VGS = 0 V 40 –0.2 V 20 –0.4 V –0.6 V 0 50 100 150 200 250 1.0 0 Ambient Temperature TA (˚C) 2.0 Drain to Source Voltage VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 Drain Current ID (mA) VDS = 2 V 60 40 20 0 –2.0 –1.0 0 Gate to Source Voltage VGS (V) 20 1.6 1.4 Ga 1.2 15 1.0 10 0.8 0.6 NFmin 0.4 5 0.2 0.0 2 4 6 8 10 12 14 16 0 18 Minimum Noise Figure NFmin (dB) 25 VDS = 2 V ID = 10 mA 1.8 Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) 2.0 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 1.6 16 f = 12 GHz 1.4 VDS = 2 V 14 1.2 Associated Gain Ga (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 12 Ga 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 0.2 2 0.0 0 Frequency f (GHz) 5 10 15 20 0 25 Drain Current ID (mA) Remark The graphs indicate nominal characteristics. Data Sheet PG10592EJ01V0DS 3 NE3512S02 S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 4 Data Sheet PG10592EJ01V0DS NE3512S02 RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) 2.80 2.60 2.06 0.64 13.0 0.54 0.74 2.06 1.7 mm/R.P. 2.6 Reference Plane (Calibration Plane) 1.7 1.7 Reference Plane (Calibration Plane) φ 0.3 TH L2–uX Ver. 1 6.0 RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz Data Sheet PG10592EJ01V0DS 5 NE3512S02 PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) (Bottom View) 3.2±0.2 0.65 TYP. 2.2±0.2 1 2.2±0.2 0.5 TYP. 2.6±0.1 1 C 2 4 (Side View) 2.2±0.2 0.15±0.05 1.7 1.5 MAX. 2 3 3 3.2±0.2 PIN CONNECTIONS 1. 2. 3. 4. 6 4 Source Drain Source Gate Data Sheet PG10592EJ01V0DS NE3512S02 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10592EJ01V0DS 7 NE3512S02 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of February, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. • NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 8 Data Sheet PG10592EJ01V0DS NE3512S02 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504