NE3521M04-T2-A

Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • DBS LNB gain-stage, Mix-stage • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3521M04-T2 Order Number NE3521M04-T2-A NE3521M04-T2B NE3521M04-T2B-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V86 Supplying Form • Embossed tape 8 mm wide • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3521M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Symbol Ratings Unit Drain to Source Voltage Parameter VDS 4.0 V Gate to Source Voltage VGS –3.0 V Drain Current ID IDSS mA Gate Current IG 80 μA Ptot 125 mW Tch +125 °C Total Power Dissipation Note Channel Temperature Storage Temperature Tstg –65 to +125 2 Note: Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PWB °C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 1 of 8 NE3521M04 RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit VDS 1 2 3 V Drain Current ID 3 10 15 mA Input Power Pin – – 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) MIN. TYP. MAX. Unit Gate to Source Leak Current Parameter IGSO VGS = –3.0 V – 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 25 45 70 mA Gate to Source Cut-off Voltage Symbol Test Conditions VGS (off) VDS = 2 V, ID = 100 μA –0.2 –0.7 –1.3 V Transconductance gm VDS = 2 V, ID = 10 mA 50 – – mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz – 0.85 1.2 dB Associated Gain Ga 9 11 – dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise specified) Parameter Symbol Noise Figure NF Associated Gain Ga R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Test Conditions VDS = 2 V, ID = 6 mA, f = 20 GHz Reference Value 0.9 Unit dB 10.5 dB Page 2 of 8 NE3521M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 80 VDS = 2 V DRAIN CURRENT ID (mA) 70 200 150 125 100 50 0 200 100 125 150 50 50 40 30 20 0 -0.80 250 -0.60 -0.40 -0.20 0.00 Ambient Temperature TA (°C) GATE TO SOURCE VOLTAGE VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs.DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 2.5 f = 20 GHz VDS = 2 V Ga 2.0 14 80 13 70 12 11 1.5 10 9 1.0 8 7 NFmin 0.5 6 5 0.0 0 4 5 10 15 20 25 DRAIN CURRENT ID (mA) MINIMUM NOISE FIGURE NFmin (dB) 60 10 ASSOCIATED GAIN Ga (dB) Total Power Dissipation Ptot (mW) 250 60 50 -0.1 V 30 -0.2 V 20 -0.3 V 10 0 30 VGS = 0 V 40 -0.4 V -0.5 V 0.0 1.0 2.0 3.0 4.0 DRAIN TO SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (mA) 2.0 20 VDS = 2 V ID = 10 mA 1.8 18 1.6 16 1.4 14 Ga 1.2 12 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 0.2 0.0 2 5 10 15 20 25 30 ASSOCIATED GAIN Ga (dB) MINIMUM NOISE FIGURE NFmin (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs.FREQUENCY 0 FREQUENCY f (GHz) Remark The graphs indicate nominal characteristics. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 3 of 8 NE3521M04 S-PARAMETERS S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [Products] → [RF Devices] → [Device Parameters] URL http://www.renesas.com/products/microwave/ R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 4 of 8 NE3521M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 2.0±0.1 2 1 1.25 3 4 1.30 0.65 1.30 3 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 (1.05) 0.65 0.60 0.65 1.25 2 1.25±0.1 V86 2.0±0.1 (Bottom View) 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 PIN CONNECTIONS 1. 2. 3. 4. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Source Drain Source Gate Page 5 of 8 NE3521M04 MOUNTING PAD DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) -Reference 1- 1.35 0.60 0.75 1 4 0. 2 4 - φ0.50 0. 0.58 Device Direction 28 1 1.20 1.42 0.56 4 1.26 1.20 4 2 2 38 0. 42 3 0. 0.80 3 0.75 0.60 1.35 -Reference 2Device Direction 3 2 3 4 1 4 0.5 1 1.3 1.25 0.6 2 1.6 0.6 Remark The mounting pad layout in this document is for reference only. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 6 of 8 NE3521M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (package surface temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 7 of 8 NE3521M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 8 of 8 Revision History Rev. 1.00 Date Mar 19, 2013 NE3521M04 Data Sheet Description Summary Page - First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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