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DATA SHEET
SILICON POWER MOS FET
NE5500234
N-CHANNEL SILICON POWER MOS FET
POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
DESCRIPTION
The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier
for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate
lateral MOS FET), housed in a surface mount 3-pin power Minimold (34 PKG) (SOT-89 type) package. The device
can deliver 32.5 dBm output power with 50% power added efficiency at 1.9 GHz under the 4.8 V supply voltage.
FEATURES
• High output power
: Pout = 32.5 dBm TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)
• High power added efficiency : ηadd = 50% TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz, Pin = 25 dBm)
• High linear gain
: GL = 11 dB TYP. (VDS = 4.8 V, IDset = 400 mA, f = 1.9 GHz)
• Surface mount package
: 3-pin power Minimold (34 PKG) (SOT-89 type)
• Single supply
: VDS = 3.0 to 6.0 V
APPLICATIONS
• Digital cellular phones
: DCS1800/PCS1900 handsets
• Handheld transceiver
: FRS (Family Radio Service), GMRS (General Mobile Radio Service)
• Others
: General purpose amplifiers for various applications
ORDERING INFORMATION
Part Number
NE5500234
Order Number
NE5500234-AZ
Package
Marking
3-pin power minimold
V2
(SOT-89, Our code: 34)
Supplying Form
• Magazine case
• Qty 25 pcs/case
(Pb-Free : External
solder plating)
NE5500234-T1
NE5500234-T1-AZ
3-pin power minimold
(SOT-89, Our code: 34)
(Pb-Free : External
• 12 mm wide embossed taping
• Source pin face the perforation side of the tape
• Qty 1 kpcs/reel
solder plating)
Remarks 1. To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5500234
2. This product is containing Pb-material inside.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10405EJ02V0DS (2nd edition)
Date Published August 2007 NS
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2004, 2007
NE5500234
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
20
V
Gate to Source Voltage
VGS
6.0
V
ID
1.0
A
Total Power Dissipation
Ptot
10
W
Channel Temperature
Tch
125
°C
Storage Temperature
Tstg
−65 to +125
°C
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Current
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Drain to Source Voltage
VDS
3.0
4.8
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.5
V
Drain Current
ID
Duty Cycle ≤ 50%, Ton ≤ 1 s
−
0.75
1.0
A
Input Power
Pin
f = 1.9 GHz, VDS = 4.8 V
−
−
27
dBm
MIN.
TYP.
MAX.
Unit
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
Gate to Source Leakage Current
IGSO
VGS = 6.0 V
−
−
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS = 8.5 V
−
−
100
nA
Gate Threshold Voltage
Vth
VDS = 4.8 V, IDS = 1 mA
1.0
1.4
2.0
V
Thermal Resistance
Rth
Channel to Case
−
10
−
°C/W
Transconductance
gm
VDS = 4.8 V, IDS = 500 mA
−
840
−
mS
IDSS = 10 μA
20
24
−
V
31.5
32.5
−
dBm
−
610
−
mA
43
50
−
%
−
11.0
−
dB
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Note
BVDSS
Pout
ID
ηadd
f = 1.9 GHz, VDS = 4.8 V,
Pin = 25 dBm,
IDset = 400 mA (RF OFF)
GL
Note Pin = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Data Sheet PU10405EJ02V0DS
NE5500234
TYPICAL CHARACTERISTICS (TA = +25°C)
SET DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain Current ID (A)
6
10 000
VGS = 10 V MAX.
Step = 1.0 V
VDS = 3.5 V
VGS = 10 V
9V
8V
7V
5
Set Drain Current IDset (mA)
7
6V
4
5V
3
4V
2
3V
1
1 000
100
10
2V
6
8
10
12
14
1 000
f = 460 MHz
f = 460 MHz
VDS = 6.0 V
Pout
100
50
5
10
15
20
Drain Current ID (mA)
VDS = 6.0 V
4.8 V
3.8 V
800
4.8 V
3.8 V
600
400
200
0
30
25
0
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
OUTPUT POWER, EFFICIENCY
vs. INPUT POWER
DRAIN CURRENT vs. INPUT POWER
1 200
f = 915 MHz
VDS = 6.0 V
4.8 V
3.8 V
f = 915 MHz
100
80
25
20
60
15
40
η
10
20
5
10
VDS = 6.0 V
1 000
Pout
5
0
3.0
DRAIN CURRENT vs. INPUT POWER
η
30
2.5
OUTPUT POWER, EFFICIENCY
vs. INPUT POWER
20
35
2.0
Gate to Source Voltage VGS (V)
25
40
1.5
Drain to Source Voltage VDS (V)
30
15
0
1
1.0
16
15
20
25
0
30
Drain Current ID (mA)
35
4
Efficiency η (%)
Output Power Pout (dBm)
40
2
Efficiency η (%)
0
0
Output Power Pout (dBm)
4.8 V
800
3.8 V
600
400
200
0
0
5
10
15
20
25
30
Input Power Pin (dBm)
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10405EJ02V0DS
3
NE5500234
OUTPUT POWER vs. INPUT POWER
30
800
f = 1.9 GHz
VDS = 4.8 V
IDset = 400 mA
Drain Current ID (mA)
Output Power Pout (dBm)
35
VDS = 3.8 V
IDset = 200 mA
25
20
15
10
5
DRAIN CURRENT vs. INPUT POWER
10
15
20
25
30
600
VDS = 4.8 V
IDset = 400 mA
400
VDS = 3.8 V
IDset = 200 mA
200
0
5
POWER ADDED EFFICIENCY vs. INPUT POWER
Power Added Efficiency ηadd (%)
f = 1.9 GHz
80
60
40
VDS = 3.8 V
IDset = 200 mA
20
0
5
VDS = 4.8 V
IDset = 400 mA
10
15
20
25
30
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
4
10
15
20
Input Power Pin (dBm)
Input Power Pin (dBm)
100
f = 1.9 GHz
Data Sheet PU10405EJ02V0DS
25
30
NE5500234
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PKG) (UNIT: mm)
(Bottom View)
(Side View)
(Top View)
4.5±0.1
1.5±0.1
1.6±0.2
0.8 MIN.
3
0.42±0.06
4.0±0.25
2
1
2.5±0.1
V2
2
3
2
0.42±0.06
0.41+0.03
–0.06
1
0.47±0.06
1.5
3.0
PIN CONNECTIONS
1. Drain
2. Source
3. Gate
Data Sheet PU10405EJ02V0DS
5
NE5500234
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Caution
6
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Do not use different soldering methods together (except for partial heating).
Data Sheet PU10405EJ02V0DS
HS350
NE5500234
• The information in this document is current as of August, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1